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Researcher profile

M. Ye. Zhuravlev

M. Ye. Zhuravlev contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.class-ph

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Published work

4 published item(s)

preprint2019arXiv

Stationary phase approximation for the Mach surface of superluminally moving source

Theoretical study of superluminal sources of electromagnetic radiation boosted after the discovery of Cherenkov-Vavilov radiation. Later, the way to create fictitious sources moving superluminally was suggested. Different approaches have been proposed for the research of the distribution of the potential and the fields radiated by the superluminally moving charges. The simplest idealized cases of uniform rectilinear motion of the charge and of the charge rotating with constant angular speed open opportunities of a detailed analysis of the fields and potentials. We use Fourier series to calculate the potential distribution of point charge rotating with constant speed. An obvious advantage of this approach is that one no longer needs to calculate the retarded positions of the charge. The number of the retarded positions depends on the observation point and increases as the ratio ω{R_0}/c rises, where c is the speed of light, ω is the rotation frequency, and {R_0} is the radius of the circle. We demonstrate that equation of Mach surface can be obtained basing on the asymptotic expansion of the potential. We analyze some characteristics of the potential basing on this asymptotic expansion.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Anomalous and Spin Hall Effects in a Magnetic Tunnel Junction with Rashba Spin-Orbit Coupling

Anomalous and spin Hall effects are investigated theoretically for a magnetic tunnel junction where the applied voltage produces a Rashba spin-or bit coupling within the tunneling barrier layer. The ferromagnetic electrodes are the source of the spin-polarized current. The tunneling electrons experience a spin-orbit coupling inside the barrier due to the applied electrical field. Charge and spin Hall currents are calculated as functions of the position inside the barrier and the angle between the magnetizations of the electrodes. We find that both charge and spin Hall currents are located inside the barrier near the in terfaces. The dependence of the currents on magnetic configuration of the magnetic tunnel junction makes possible the manipulation by the Hall currents via rotation of the magnetization of the electrodes.

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preprint2012arXiv

Coherent Potential Approximation as a Voltage Probe

Coherent potential approximation (CPA) has widely been used for studying residual resistivity of bulk alloys and electrical conductivity in inhomogeneous systems with structural disorder. Here we revisit the single-site CPA within the Landauer-Büttiker approach applied to the electronic transport in layered structures and show that this method can be interpreted in terms of the Büttiker's voltage-probe model that has been developed for treating phase breaking scattering in mesoscopic systems. We demonstrate that the on-site vertex function which appears within the single-site CPA formalism plays a role of the local chemical potential within the voltage-probe approach. This interpretation allows the determination of the chemical potential profile across a disordered conductor which is useful for analyzing results of transport calculations within the CPA. We illustrate this method by providing several examples. In particular, for layered systems with translational periodicity in the plane of the layers we introduce the local resistivity and calculate the interface resistance between disordered layers.

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preprint2010arXiv

Ferroelectric Dead Layer Driven by a Polar Interface

Based on first-principles and model calculations we investigate the effect of polar interfaces on the ferroelectric stability of thin-film ferroelectrics. As a representative model, we consider a TiO2-terminated BaTiO3 film with LaO monolayers at the two interfaces that serve as doping layers. We find that the polar interfaces create an intrinsic electric field that is screened by the electron charge leaking into the BaTiO3 layer. The amount of the leaking charge is controlled by the boundary conditions which are different for three heterostructures considered, namely Vacuum/LaO/BaTiO3/LaO, LaO/BaTiO3, and SrRuO3/LaO/BaTiO3/LaO. The intrinsic electric field forces ionic displacements in BaTiO3 to produce the electric polarization directed into the interior of the BaTiO3 layer. This creates a ferroelectric dead layer near the interfaces that is non-switchable and thus detrimental to ferroelectricity. Our first-principles and model calculations demonstrate that the effect is stronger for a larger effective ionic charge at the interface and longer screening length due to a stronger intrinsic electric field that penetrates deeper into the ferroelectric. The predicted mechanism for a ferroelectric dead layer at the interface controls the critical thickness for ferroelectricity in systems with polar interfaces.

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