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K. D. Belashchenko

K. D. Belashchenko contributes to research discovery and scholarly infrastructure.

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Published work

17 published item(s)

preprint2022arXiv

Effect of interfacial intermixing on spin-orbit torque in Co/Pt bilayers

Using the first-principles non-equilibrium Green's function technique with supercell disorder averaging, we study the influence of interfacial intermixing on the spin-orbit torque in Co$\mid$Pt bilayers. Intermixing is modeled by inserting one or more monolayers of a disordered CoPt alloy between Co and Pt. Dampinglike torque is moderately enhanced by interfacial intermixing, while the fieldlike torque, which is small for abrupt interfaces, is strongly enhanced and becomes comparable to the dampinglike torque. The enhancement of the fieldlike torque is attributed to the interface between Co and the intermixed region. The planar Hall-like torque increases with intermixing but remains relatively small. The behavior of the torques is similar for bilayers with (111) and (001)-oriented interfaces. Strong dependence of the fieldlike torque on intermixing could provide a way to tune the fieldlike-to-dampinglike torque ratio by interface engineering.

preprint2022arXiv

First-principles calculations of spin-orbit torques in Mn$_2$Au/heavy-metal bilayers

Using the non-equilibrium Green's function technique, we calculate spin-orbit torques in a Mn$_2$Au/heavy-metal bilayer, where the heavy metal (HM) is W or Pt. Spin-orbit coupling (SOC) in the bulk of Mn$_2$Au generates strong fieldlike torquance, which is parallel on the two sublattices and scales linearly with the conductivity, and a weaker dampinglike torquance that is antiparallel on the two sublattices. Interfaces with W or Pt generate parallel dampinglike torques of opposite signs that are similar in magnitude to those in ferromagnetic bilayers and similarly insensitive to disorder. The dampinglike torque efficiency depends strongly on the termination of the interface and on the presence of spin-orbit coupling in Mn$_2$Au, suggesting that the dampinglike torque is not due solely to the spin-Hall effect in the HM layer. Interfaces also induce antiparallel fieldlike and dampinglike torques that can penetrate deep into Mn$_2$Au.

preprint2020arXiv

Effects of intrinsic defects and alloying with Fe on the half-metallicity of Co$_2$MnSi

The electronic structure and half-metallic gap of Co$_{2}$MnSi in the presence of crystallographic defects, partial Fe substitution for Mn, and thermal spin fluctuations are studied using the coherent potential approximation and the disordered local moment method. In the presence of 5\% Co or Mn vacancies the Fermi level shifts down to the minority-spin valence-band maximum. In contrast to NiMnSb, both types of Mn antisite defects in Co$_{2}$MnSi are strongly exchange-coupled to the host magnetization, and thermal spin fluctuations do not strongly affect the half-metallic gap. Partial substitution of Mn by Fe results in considerable changes in the Bloch spectral function near the Fermi level, which strongly deviate from the rigid-band picture. In particular, a light band with the Fe character crosses the Fermi level at about 50\% concentration. At room temperature, Fe substitution of up to 30\% slightly increases the spin polarization at the Fermi level.

preprint2020arXiv

Generalized magnetoelectronic circuit theory and spin relaxation at interfaces in magnetic multilayers

Spin transport at metallic interfaces is an essential ingredient of various spintronic device concepts, such as giant magnetoresistance, spin-transfer torque, and spin pumping. Spin-orbit coupling plays an important role in many such devices. In particular, spin current is partially absorbed at the interface due to spin-orbit coupling. We develop a general magnetoelectronic circuit theory and generalize the concept of the spin mixing conductance, accounting for various mechanisms responsible for spin-flip scattering. For the special case when exchange interactions dominate, we give a simple expression for the spin mixing conductance in terms of the contributions responsible for spin relaxation (i.e., spin memory loss), spin torque, and spin precession. The spin-memory loss parameter $δ$ is related to spin-flip transmission and reflection probabilities. There is no straightforward relation between spin torque and spin memory loss. We calculate the spin-flip scattering rates for N|N, F|N, F|F interfaces using the Landauer-Büttiker method within the linear muffin-tin orbital method and determine the values of $δ$ using circuit theory.

preprint2019arXiv

Interfacial contributions to spin-orbit torque and magnetoresistance in ferromagnet/heavy-metal bilayers

The thickness dependence of spin-orbit torque and magnetoresistance in ferromagnet/heavy-metal bilayers is studied using the first-principles non-equilibrium Green's function formalism combined with the Anderson disorder model. A systematic expansion in orthogonal vector spherical harmonics is used for the angular dependence of the torque. The damping-like torque in Co/Pt and Co/Au bilayers can be described as a sum of the spin-Hall contribution, which increases with thickness in agreement with the spin-diffusion model, and a comparable interfacial contribution. The magnetoconductance in the plane perpendicular to the current in Co/Pt bilayers is of the order of a conductance quantum per interfacial atom, exceeding the prediction of the spin-Hall model by more than an order of magnitude. This suggests that the "spin-Hall magnetoresistance," similarly to the damping-like torque, has a large interfacial contribution unrelated to the spin-Hall effect.

preprint2015arXiv

Spectral signatures of thermal spin disorder and excess Mn in half-metallic NiMnSb

Effects of thermal spin disorder and excess Mn on the electronic spectrum of half-metallic NiMnSb are studied using first-principles calculations. Temperature-dependent spin disorder, introduced within the vector disordered local moment model, causes the valence band at the $Γ$ point to broaden and shift upwards, crossing the Fermi level and thereby closing the half-metallic gap above room temperature. The spectroscopic signatures of excess Mn on the Ni, Sb, and empty sites (Mn$_\mathrm{Ni}$, Mn$_\mathrm{Sb}$, and Mn$_\mathrm{E}$) are analyzed. Mn$_\mathrm{Ni}$ is spectroscopically invisible. The relatively weak coupling of Mn$_\mathrm{Sb}$ and Mn$_\mathrm{E}$ spins to the host strongly deviates from the Heisenberg model, and the spin of Mn$_\mathrm{E}$ is canted in the ground state. While the half-metallic gap is preserved in the collinear ground state of Mn$_\mathrm{Sb}$, thermal spin disorder of the weakly coupled Mn$_\mathrm{Sb}$ spins destroys it at low temperatures. This property of Mn$_\mathrm{Sb}$ may be the source of the observed low-temperature transport anomalies.

preprint2014arXiv

First-principles microscopic model of exchange-driven magnetoelectric response with application to Cr$_2$O$_3$

The exchange-driven contribution to the magnetoelectric susceptibility $\hatα$ is formulated using a microscopic model Hamiltonian coupling the spin degrees of freedom to lattice displacements and electric field, which may be constructed from first-principles data. Electronic and ionic contributions are sorted out, and the latter is resolved into a sum of contributions from different normal modes. If intrasublattice spin correlations can be neglected, the longitudinal component $α_\parallel$ becomes proportional to the product of magnetic susceptibility and sublattice magnetization in accordance with Rado's phenomenological model. As an illustration, the method is applied to analyze the temperature dependence of the longitudinal magnetoelectric susceptibility of Cr$_2$O$_3$ using first-principles calculations and the quantum pair cluster approximation for magnetic thermodynamics. A substantial electronic contribution is found, which is opposite to the ionic part. The sensitivity of the results to the Hubbard $U$ parameter and the sources of error are studied. It is also found that non-Heisenberg interactions are too weak to account for the sign change of $α_\parallel$ in Cr$_2$O$_3$.

preprint2014arXiv

Microscopic, first-principles model of strain-induced interaction in concentrated size-mismatched alloys

The harmonic Kanzaki-Krivoglaz-Khachaturyan model of strain-induced interaction is generalized to concentrated size-mismatched alloys and adapted to first-principles calculations. The configuration dependence of both Kanzaki forces and force constants is represented by real-space cluster expansions that can be constructed based on the calculated forces. The model is implemented for the fcc lattice and applied to Cu$_{1-x}$Au$_x$ and Fe$_{1-x}$Pt$_x$ alloys for concentrations $x=0.25$, 0.5, and 0.75. The asymmetry between the $3d$ and $5d$ elements leads to large quadratic terms in the occupation-number expansion of the Kanzaki forces and thereby to strongly non-pairwise long-range interaction. The main advantage of the full configuration-dependent lattice deformation model is its ability to capture this singular many-body interaction. The roles of ordering striction and anharmonicity in Cu-Au and Fe-Pt alloys are assessed. Although the harmonic force constants defined with respect to the unrelaxed lattice are unsuitable for the calculation of the vibrational entropies, the phonon spectra for ordered and disordered alloys are found to be in good agreement with experimental data. The model is further adapted to concentration wave analysis and Monte Carlo simulations by means of an auxiliary multi-parametric real-space cluster expansion, which is used to find the ordering temperatures. Good agreement with experiment is found for all systems except CuAu$_3$ (due to the known failure of the generalized gradient approximation) and FePt$_3$, where the discrepancy is likely due to the neglect of magnetic disorder.

preprint2013arXiv

Deviations from Matthiessen rule and resistivity saturation effects in Gd and Fe

According to earlier first-principles calculations, the spin-disorder contribution to the resistivity of rare-earth metals in the paramagnetic state is strongly underestimated if Matthiessen's rule is assumed to hold. To understand this discrepancy, the resistivity of paramagnetic Fe and Gd is evaluated by taking into account both spin and phonon disorder. Calculations are performed using the supercell approach within the linear muffin-tin orbital method. Phonon disorder is modeled by introducing random displacements of the atomic nuclei, and the results are compared with the case of fictitious Anderson disorder. In both cases the resistivity shows a nonlinear dependence on the square of the disorder potential, which is interpreted as a resistivity saturation effect. This effect is much stronger in Gd than in Fe. The non-linearity makes the phonon and spin-disorder contributions to the resistivity non-additive, and the standard procedure of extracting the spin-disorder resistivity by extrapolation from high temperatures becomes ambiguous. An "apparent" spin-disorder resistivity obtained through such extrapolation is in much better agreement with experiment compared to the results obtained by considering only spin disorder. By analyzing the spectral function of the paramagnetic Gd in the presence of Anderson disorder, the resistivity saturation is explained by the collapse of a large area of the Fermi surface due to the disorder-induced mixing between the electronic and hole sheets.

preprint2013arXiv

Electronic structure and magnetic properties of Gd-doped and Eu-rich EuO

The effects of Gd doping and O vacancies on the magnetic interaction and Curie temperature of EuO are studied using first-principles calculations. Linear response calculations in the virtual crystal approximation show a broad maximum in the Curie temperature as a function of doping, which results from the combination of the saturating contribution from indirect exchange and a decreasing contribution from the f-d hopping mechanism. Non-Heisenberg interaction at low doping levels and its effect on the Curie temperature are examined. The electronic structure of a substitutional Gd and of an O vacancy in EuO are evaluated. When the 4f spins are disordered, the impurity state goes from single to double occupation, but correlated bound magnetic polarons are not ruled out. At higher vacancy concentrations typical for Eu-rich EuO films, the impurity states broaden into bands and remain partially filled. To go beyond the homogeneous doping picture, magnetostructural cluster expansions are constructed, which describe the modified exchange parameters near Gd dopants or O vacancies. Thermodynamic properties are studied using Monte Carlo simulations. The Curie temperature for Gd-doped EuO agrees with the results of the virtual crystal approximation and shows a maximum of about 150 K. At 3.125% vacancy concentration the Curie temperature increases to 120 K, consistent with experimental data for Eu-rich film samples.

preprint2012arXiv

Coherent Potential Approximation as a Voltage Probe

Coherent potential approximation (CPA) has widely been used for studying residual resistivity of bulk alloys and electrical conductivity in inhomogeneous systems with structural disorder. Here we revisit the single-site CPA within the Landauer-Büttiker approach applied to the electronic transport in layered structures and show that this method can be interpreted in terms of the Büttiker's voltage-probe model that has been developed for treating phase breaking scattering in mesoscopic systems. We demonstrate that the on-site vertex function which appears within the single-site CPA formalism plays a role of the local chemical potential within the voltage-probe approach. This interpretation allows the determination of the chemical potential profile across a disordered conductor which is useful for analyzing results of transport calculations within the CPA. We illustrate this method by providing several examples. In particular, for layered systems with translational periodicity in the plane of the layers we introduce the local resistivity and calculate the interface resistance between disordered layers.

preprint2012arXiv

Microscopic origin of the structural phase transitions at the Cr2O3 (0001) surface

The surface of a Cr2O3 (0001) film epitaxially grown on Cr undergoes an unusual reentrant sequence of structural phase transitions. In order to understand the underlying microscopic mechanisms, the structural and magnetic properties of the Cr2O3 (0001) surface are here studied using first-principles electronic structure calculations. Two competing surface Cr sites are identified. The energetics of the surface is described by a configurational Hamiltonian with parameters determined using total energy calculations for several surface supercells. Effects of epitaxial strain and magnetic ordering on configurational interaction are also included. The thermodynamics of the system is studied using Monte Carlo simulations. At zero strain the surface undergoes an ordering phase transition at 165 K. Tensile epitaxial strain together with antiferromagnetic ordering drive the system toward strong configurational frustration, suggesting the mechanism for the disordering phase transition at lower temperatures.

preprint2012arXiv

Spin injection from a half-metal at finite temperatures

Spin injection from a half-metallic electrode in the presence of thermal spin disorder is analyzed using a combination of random matrix theory, spin-diffusion theory, and explicit simulations for the tight-binding s-d model. It is shown that efficient spin injection from a half-metal is possible as long as the effective resistance of the normal metal does not exceed a characteristic value, which does not depend on the resistance of the half-metallic electrode, but is rather controlled by spin-flip scattering at the interface. This condition can be formulated as α<(l/L)/T, where αis the relative deviation of the magnetization from saturation, l and L the mean-free path and the spin-diffusion length in the non-magnetic channel, and T the transparency of the tunnel barrier at the interface (if present). The general conclusions are confirmed by tight-binding s-d model calculations. A rough estimate suggests that efficient spin injection from true half-metallic ferromagnets into silicon or copper may be possible at room temperature across a transparent interface.

preprint2010arXiv

Equilibrium magnetization at the boundary of a magnetoelectric antiferromagnet

Symmetry arguments are used to show that a boundary of a magnetoelectric antiferromagnet has an equilibrium magnetization. This magnetization is coupled to the bulk antiferromagnetic order parameter and can be switched along with it by a combination of E and B fields. As a result, the antiferromagnetic domain state of a magnetoelectric can be used as a non-volatile switchable state variable in nanoelectronic device applications. Mechanisms affecting the boundary magnetization and its temperature dependence are classified. The boundary magnetization can be especially large if the boundary breaks the equivalence of the antiferromagnetic sublattices.

preprint2010arXiv

First-principles study of phase stability of Gd-doped EuO and EuS

Phase diagrams of isoelectronic Eu$_{1-x}$Gd$_x$O and Eu$_{1-x}$Gd$_{x}$S quasi-binary alloy systems are constructed using first-principles calculations combined with the standard cluster expansion approach and Monte-Carlo simulations. The oxide system has a wide miscibility gap on the Gd-rich side but forms ordered compounds on the Eu-rich side, exhibiting a deep asymmetric convex hull in the formation enthalpy diagram. The sulfide system has no stable compounds. The large difference in the formation enthalpies of the oxide and sulfide compounds is due to the contribution of local lattice relaxation, which is sensitive to the anion size. The solubility of Gd in both EuO and EuS is in the range of 10-20% at room temperature and quickly increases at higher temperatures, indicating that highly doped disordered solid solutions can be produced without the precipitation of secondary phases. We also predict that rocksalt GdO can be stabilized under appropriate experimental conditions.

preprint2010arXiv

Robust isothermal electric switching of interface magnetization: A route to voltage-controlled spintronics

Roughness-insensitive and electrically controllable magnetization at the (0001) surface of antiferromagnetic chromia is observed using magnetometry and spin-resolved photoemission measurements and explained by the interplay of surface termination and magnetic ordering. Further, this surface in placed in proximity with a ferromagnetic Co/Pd multilayer film. Exchange coupling across the interface between chromia and Co/Pd induces an electrically controllable exchange bias in the Co/Pd film, which enables a reversible isothermal (at room temperature) shift of the global magnetic hysteresis loop of the Co/Pd film along the magnetic field axis between negative and positive values. These results reveal the potential of magnetoelectric chromia for spintronic applications requiring non-volatile electric control of magnetization.

preprint2009arXiv

First-principles analysis of spin-disorder resistivity of Fe and Ni

Spin-disorder resistivity of Fe and Ni and its temperature dependence are analyzed using noncollinear density functional calculations within the supercell method. Different models of thermal spin disorder are considered, including the mean-field approximation and the nearest-neighbor Heisenberg model. Spin-disorder resistivity is found to depend weakly on magnetic short-range order. If the local moments are kept frozen at their zero-temperature values, very good agreement with experiment is obtained for Fe, but for Ni the resistivity at elevated temperatures is significantly overestimated. Agreement with experiment for Fe is improved if the local moments are iterated to self-consistency. The overestimation of the resistivity for paramagnetic Ni is attributed to the reduction of the local moments down to 0.35 Bohr magnetons. Overall, the results suggest that low-energy spin fluctuations in Fe and Ni are better viewed as classical rotations of local moments rather than quantized spin fluctuations that would require an (S+1)/S correction.