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J. P. Velev

J. P. Velev contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.supr-con

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preprint2014arXiv

What is the minimal model of magnetic interactions in Fe-based superconductors?

Using noncollinear first-principles calculations we perform a systematic study of the magnetic order in several families of ferropnictides. We find a fairly universal energy dependence on the magnetization order in all cases. Our results confirm that a simple Heisenberg model fails to account for the energy dependence of the magnetization in couple of ways: first a biquadratic term is present in all cases and second the magnetic moment softens depending on the orientation. We also find that hole doping substantially reduces the biquadratic contribution, although the antiferromagnetic stripe state remains stable within the whole range of doping concentrations, and thus the reported lack of the orthorhombicity in Na-doped BaFe$_2$As$_2$ is probably due to factors other than a sign reversal of the biquadratic term. Finally, we discovered that even with the biquadratic term, there is a limit to the accuracy of mapping the density functional theory energetics onto Heisenberg-type models, independent of the range of the model.

preprint2010arXiv

Ferroelectric Dead Layer Driven by a Polar Interface

Based on first-principles and model calculations we investigate the effect of polar interfaces on the ferroelectric stability of thin-film ferroelectrics. As a representative model, we consider a TiO2-terminated BaTiO3 film with LaO monolayers at the two interfaces that serve as doping layers. We find that the polar interfaces create an intrinsic electric field that is screened by the electron charge leaking into the BaTiO3 layer. The amount of the leaking charge is controlled by the boundary conditions which are different for three heterostructures considered, namely Vacuum/LaO/BaTiO3/LaO, LaO/BaTiO3, and SrRuO3/LaO/BaTiO3/LaO. The intrinsic electric field forces ionic displacements in BaTiO3 to produce the electric polarization directed into the interior of the BaTiO3 layer. This creates a ferroelectric dead layer near the interfaces that is non-switchable and thus detrimental to ferroelectricity. Our first-principles and model calculations demonstrate that the effect is stronger for a larger effective ionic charge at the interface and longer screening length due to a stronger intrinsic electric field that penetrates deeper into the ferroelectric. The predicted mechanism for a ferroelectric dead layer at the interface controls the critical thickness for ferroelectricity in systems with polar interfaces.

preprint2007arXiv

The Origin of Tunneling Anisotropic Magnetoresistance in Break Junctions

First-principles calculations of electron tunneling transport in Ni and Co break junctions reveal strong dependence of the conductance on the magnetization direction, an effect known as tunneling anisotropic magnetoresistance (TAMR). The origin of this phenomenon stems from resonant states localized in the electrodes near the junction break. The energy and broadening of these states is strongly affected by the magnetization orientation due to spin-orbit coupling, causing TAMR to be sensitive to bias voltage on a scale of a few mV. Our results bear a resemblance to recent experimental data and suggest that TAMR driven by resonant states is a general phenomenon typical for magnetic broken contacts and other experimental geometries where a magnetic tip is used to probe electron transport.