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M. Trupke

M. Trupke contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2026arXiv

Demonstration Of A Quantum Magnetometer Chip Based On Proprietary And Scalable 4H-Silicon Carbide Technology

This work presents an industrially scalable, power-efficient and high-performance quantum magnetometer chip based on proprietary 4H-silicon carbide (SiC) technology, leveraging wafer-scale fabrication techniques to optimize V2 silicon vacancy color centers for highly reproducible, industry-grade fabrication with precise control of depth and density. The integration of these color center ensembles into a planar silicon carbide waveguide enables efficient excitation of a large ensemble and simplifies fluorescence extraction compared to standard confocal methods. We report continuous-wave (CW) optically detected magnetic resonance measurements, complemented by Rabi, Ramsey, and Hahn-echo sequences, which demonstrate coherent capabilities of the large embedded ensemble of V2 centers. Based on the data, our device exhibits sensor shot-noise limited sensitivities 2-3 orders of magnitude lower compared to more complex confocal techniques. Collectively, these advancements simplify the quantum sensor architecture, enhance sensitivity, and streamline optical excitation and collection, thereby paving the way for the development of next-generation SiC-quantum sensing technologies.

preprint2019arXiv

Influence of irradiation on defect spin coherence in silicon carbide

Irradiation-induced lattice defects in silicon carbide (SiC) have already exceeded their previous reputation as purely performance-inhibiting. With their remarkable quantum properties, such as long room-temperature spin coherence and the possibility of downscaling to single-photon source level, they have proven to be promising candidates for a multitude of quantum information applications. One of the most crucial parameters of any quantum system is how long its quantum coherence can be preserved. By using the pulsed optically detected magnetic resonance (ODMR) technique, we investigate the spin-lattice relaxation time ($T_1$) and spin coherence time ($T_2$) of silicon vacancies in 4H-SiC created by neutron, electron and proton irradiation in a broad range of fluences. We also examine the effect of irradiation energy and sample annealing. We establish a robustness of the $T_1$ time against all types of irradiation and reveal a universal scaling of the $T_2$ time with the emitter density. Our results can be used to optimize the coherence properties of silicon vacancy qubits in SiC for specific tasks.