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Source author record

M. T. Greenaway

M. T. Greenaway appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.othercond-mat.mtrl-scicond-mat.quant-gasnlin.CDphysics.ed-ph

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Published work

14 published item(s)

preprint2026arXiv

Systemically Designed Degrees for Real-World Challenges: A case study on Physics curriculum design at Loughborough University

We present a ground-up redesign of the undergraduate physics degree at Loughborough University, driven by the principle of authenticity in academic and industrial practice. Departing from conventional incremental reforms, we adopt a systems-engineering approach to programme-level curriculum design, treating the degree as an integrated system with verifiable performance. This methodology aligns stakeholder-derived requirements with vertically-integrated threads in theory, computation, laboratory practice, and professional skills. We demonstrate that this approach enables students to achieve levels of disciplinary and cross-disciplinary competence beyond those typically expected at undergraduate level. Outcomes are supported by graduate destinations, enhanced student performance, and positive external evaluations, including national accreditation. Our results suggest that rigorous, system-level curriculum design can yield transformational gains in both capability and confidence.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Out-of-equilibrium criticalities in graphene superlattices

In thermodynamic equilibrium, current in metallic systems is carried by electronic states near the Fermi energy whereas the filled bands underneath contribute little to conduction. Here we describe a very different regime in which carrier distribution in graphene and its superlattices is shifted so far from equilibrium that the filled bands start playing an essential role, leading to a critical-current behavior. The criticalities develop upon the velocity of electron flow reaching the Fermi velocity. Key signatures of the out-of-equilibrium state are current-voltage characteristics resembling those of superconductors, sharp peaks in differential resistance, sign reversal of the Hall effect, and a marked anomaly caused by the Schwinger-like production of hot electron-hole plasma. The observed behavior is expected to be common for all graphene-based superlattices.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Graphene's non-equilibrium fermions reveal Doppler-shifted magnetophonon resonances accompanied by Mach supersonic and Landau velocity effects

Oscillatory magnetoresistance measurements on graphene have revealed a wealth of novel physics. These phenomena are typically studied at low currents. At high currents, electrons are driven far from equilibrium with the atomic lattice vibrations so that their kinetic energy can exceed the thermal energy of the phonons. Here, we report three non-equilibrium phenomena in monolayer graphene at high currents: (i) a "Doppler-like" shift and splitting of the frequencies of the transverse acoustic (TA) phonons emitted when the electrons undergo inter-Landau level (LL) transitions; (ii) an intra-LL Mach effect with the emission of TA phonons when the electrons approach supersonic speed, and (iii) the onset of elastic inter-LL transitions at a critical carrier drift velocity, analogous to the superfluid Landau velocity. All three quantum phenomena can be unified in a single resonance equation. They offer avenues for research on out-of-equilibrium phenomena in other two-dimensional fermion systems.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators

We assess the potential of two-terminal graphene-hBN-graphene resonant tunneling diodes as high-frequency oscillators, using self-consistent quantum transport and electrostatic simulations to determine the time-dependent response of the diodes in a resonant circuit. We quantify how the frequency and power of the current oscillations depend on the diode and circuit parameters including the doping of the graphene electrodes, device geometry, alignment of the graphene lattices, and the circuit impedances. Our results indicate that current oscillations with frequencies of up to several hundred GHz should be achievable.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Tuning the valley and chiral quantum state of Dirac electrons in van der Waals heterostructures

Chirality is a fundamental property of electrons with the relativistic spectrum found in graphene and topological insulators. It plays a crucial role in relativistic phenomena, such as Klein tunneling, but it is difficult to visualize directly. Here we report the direct observation and manipulation of chirality and pseudospin polarization in the tunneling of electrons between two almost perfectly aligned graphene crystals. We use a strong in-plane magnetic field as a tool to resolve the contributions of the chiral electronic states that have a phase difference between the two components of their vector wavefunction. Our experiments not only shed light on chirality, but also demonstrate a technique for preparing graphene's Dirac electrons in a particular quantum chiral state in a selected valley.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors

We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between $\sim$10 and 200 mV. We attribute them to electron tunneling assisted by the emission of phonons of well-defined energy. The bias voltages at which they occur are insensitive to the applied gate voltage and hence independent of the carrier densities in the graphene electrodes, so plasmonic effects can be ruled out. The phonon energies corresponding to the resonances are compared with the lattice dispersion curves of graphene-boron nitride heterostructures and are close to peaks in the single phonon density of states.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Resonant tunnelling between the chiral Landau states of twisted graphene lattices

A new class of multilayered functional materials has recently emerged in which the component atomic layers are held together by weak van der Waals forces that preserve the structural integrity and physical properties of each layer. An exemplar of such a structure is a transistor device in which relativistic Dirac Fermions can resonantly tunnel through a boron nitride barrier, a few atomic layers thick, sandwiched between two graphene electrodes. An applied magnetic field quantises graphene's gapless conduction and valence band states into discrete Landau levels, allowing us to resolve individual inter-Landau level transitions and thereby demonstrate that the energy, momentum and chiral properties of the electrons are conserved in the tunnelling process. We also demonstrate that the change in the semiclassical cyclotron trajectories, following a tunnelling event, is a form of Klein tunnelling for inter-layer transitions.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Twist-controlled resonant tunnelling in graphene-boron nitride-graphene heterostructures

Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals have already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to the realisation of functional devices, such as tunnel diodes, tunnel transistors and photovoltaic sensors. An unprecedented degree of control of the electronic properties is available not only by means of the selection of materials in the stack but also through the additional fine-tuning achievable by adjusting the built-in strain and relative orientation of the component layers. Here we demonstrate how careful alignment of the crystallographic orientation of two graphene electrodes, separated by a layer of hexagonal boron nitride (hBN) in a transistor device, can achieve resonant tunnelling with conservation of electron energy, momentum and, potentially, chirality. We show how the resonance peak and negative differential conductance in the device characteristics induces a tuneable radio-frequency oscillatory current which has potential for future high frequency technology.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Resonant control of cold-atom transport through two optical lattices with a constant relative speed

We show theoretically that the dynamics of cold atoms in the lowest energy band of a stationary optical lattice can be transformed and controlled by a second, weaker, periodic potential moving at a constant speed along the axis of the stationary lattice. The atom trajectories exhibit complex behavior, which depends sensitively on the amplitude and speed of the propagating lattice. When the speed and amplitude of the moving potential are low, the atoms are dragged through the static lattice and perform drifting orbits with frequencies an order of magnitude higher than that corresponding to the moving potential. Increasing either the speed or amplitude of the moving lattice induces Bloch-like oscillations within the energy band of the static lattice, which exhibit complex resonances at critical values of the system parameters. In some cases, a very small change in these parameters can reverse the atom's direction of motion. In order to understand these dynamics we present an analytical model, which describes the key features of the atom transport and also accurately predicts the positions of the resonant features in the atom's phase space. The abrupt controllable transitions between dynamical regimes, and the associated set of resonances, provide a mechanism for transporting atoms between precise locations in a lattice: as required for using cold atoms to simulate condensed matter or as a stepping stone to quantum information processing. The system also provides a direct quantum simulator of acoustic waves propagating through semiconductor nanostructures in sound analogs of the optical laser (SASER).

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Resonant tunnelling and negative differential conductance in graphene transistors

The chemical stability of graphene and other free-standing two-dimensional crystals means that they can be stacked in different combinations to produce a new class of functional materials, designed for specific device applications. Here we report resonant tunnelling of Dirac fermions through a boron nitride barrier, a few atomic layers thick, sandwiched between two graphene electrodes. The resonant peak in the device characteristics occurs when the electronic spectra of the two electrodes are aligned. The resulting negative differential conductance persists up to room temperature and is gate voltage-tuneable due to graphene's unique Dirac-like spectrum. Whereas conventional resonant tunnelling devices comprising a quantum well sandwiched between two tunnel barriers are tens of nanometres thick, the tunnelling carriers in our devices cross only a few atomic layers, offering the prospect of ultra-fast transit times. This feature, combined with the multi-valued form of the device characteristics, has potential for applications in high-frequency and logic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Controlling high-frequency collective electron dynamics via single-particle complexity

We demonstrate, through experiment and theory, enhanced high-frequency current oscillations due to magnetically-induced conduction resonances in superlattices. Strong increase in the ac power originates from complex single-electron dynamics, characterized by abrupt resonant transitions between unbound and localized trajectories, which trigger and shape propagating charge domains. Our data demonstrate that external fields can tune the collective behavior of quantum particles by imprinting configurable patterns in the single-particle classical phase space.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Effect of temperature on resonant electron transport through stochastic conduction channels in superlattices

We show that resonant electron transport in semiconductor superlattices with an applied electric and tilted magnetic field can, surprisingly, become more pronounced as the lattice and conduction electron temperature increases from 4.2 K to room temperature and beyond. It has previously been demonstrated that at certain critical field parameters, the semiclassical trajectories of electrons in the lowest miniband of the superlattice change abruptly from fully localised to completely unbounded. The unbounded electron orbits propagate through intricate web patterns, known as stochastic webs, in phase space, which act as conduction channels for the electrons and produce a series of resonant peaks in the electron drift velocity versus electric field curves. Here, we show that increasing the lattice temperature strengthens these resonant peaks due to a subtle interplay between thermal population of the conduction channels and transport along them. This enhances both the electron drift velocity and the influence of the stochastic webs on the current-voltage characteristics, which we calculate by making self-consistent solutions of the coupled electron transport and Poisson equations throughout the superlattice. These solutions reveal that increasing the temperature also transforms the collective electron dynamics by changing both the threshold voltage required for the onset of self-sustained current oscillations, produced by propagating charge domains, and the oscillation frequency.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Controlling and enhancing THz collective electron dynamics in superlattices by chaos-assisted miniband transport

We show that a tilted magnetic field transforms the structure and THz dynamics of charge domains in a biased semiconductor superlattice. At critical field values, strong coupling between the Bloch and cyclotron motion of a miniband electron triggers chaotic delocalization of the electron orbits, causing strong resonant enhancement of their drift velocity. This dramatically affects the collective electron behavior by inducing multiple propagating charge domains and GHz-THz current oscillations with frequencies ten times higher than with no tilted field.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Using acoustic waves to induce high-frequency current oscillations in superlattices

We show that GHz acoustic waves in semiconductor superlattices can induce THz electron dynamics that depend critically on the wave amplitude. Below a threshold amplitude, the acoustic wave drags electrons through the superlattice with a peak drift velocity overshooting that produced by a static electric field. In this regime, single electrons perform drifting orbits with THz frequency components. When the wave amplitude exceeds the critical threshold, an abrupt onset of Bloch-like oscillations causes negative differential velocity. The acoustic wave also affects the collective behavior of the electrons by causing the formation of localised electron accumulation and depletion regions, which propagate through the superlattice, thereby producing self-sustained current oscillations even for very small wave amplitudes. We show that the underlying single-electron dynamics, in particular the transition between the acoustic wave dragging and Bloch oscillation regimes, strongly influence the spatial distribution of the electrons and the form of the current oscillations. In particular, the amplitude of the current oscillations depends non-monotonically on the strength of the acoustic wave, reflecting the variation of the single-electron drift velocity.

0 citations0 reviewsNo code linkedOpen access