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Researcher profile

M. Shur

M. Shur contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciphysics.optics

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Published work

8 published item(s)

preprint2021arXiv

Giant Inverse Faraday Effect in Plasmonic Crystal Ring

Circularly polarized electromagnetic wave impinging on a conducting ring generates a circulating DC plasmonic current resulting in an Inverse Faraday Effect in nanorings. We show that a large ring with periodically modulated width on a nanoscale, smaller or comparable with the plasmonic mean free path, supports plasmon energy bands. When a circularly polarized radiation impinges on such a plasmonic ring, it produces resonant DC plasmonic current on a macro scale resulting in a Giant Inverse Faraday Effect. The metamaterials comprised of the concentric variable width rings (plasmonic disks) and stacked plasmonic disks (plasmonic solenoids) amplify the generated constant magnetic field by orders of magnitude.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Plasmonic Instabilities in Two-dimensional Electron Channels of Variable Width

Understanding of fundamental physics of plasmonic instabilities is the key issue for the design of a new generation of compact electronic devices required for numerous THz applications. Variable width plasmonic devices have emerged as potential candidates for such an application. The analysis of the variable width plasmonic devices presented in this paper shows that these structures enable both the Dyakonov-Shur instability (when the electron drift velocity everywhere in the device remains smaller than the plasma velocity) and the "plasmonic boom" instability that requires drift velocity exceeding the plasma velocity in some of the device sections. For symmetrical structures, the drifting current could be provided by an RF signal leading to RF to THz and THz to RF frequency conversion using the source and drain antennas and reducing losses associated with ohmic contacts. We show that narrow regions protruding from the channel ("plasmonic stubs") could control and optimize boundary conditions at the contacts and/or at the interfaces between different device sections. These sections could be combined into plasmonic crystals yielding enhanced power and a better impedance matching. The mathematics of the problems is treated using the transmission line analogy. We show that the combination of the stubs and the variable width channels is required for the instability rise in an optimized plasmonic crystal. Our estimates show that THz plasmonic crystal oscillators could operate at room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

New Optical Gating Technique for Detection of Electric Field Waveforms with Subpicosecond Resolution

We report on the new optical gating technique used for the direct photoconductive detection of short pulses of terahertz radiation with the resolution up to 250 femtoseconds. The femtosecond optical laser pulse time delayed with respect to the THz pulse generated a large concentration of the electron hole pairs in the AlGaAs/InGaAs High Electron Mobility Transistor (HEMT) drastically increasing the conductivity on the femtosecond scale and effectively shorting the source and drain. This optical gating quenched the response of the plasma waves launched by the THz pulse and allowed us to reproduce the waveform of the THz pulse by varying the time delay between the THz and quenching optical pulses. The results are in excellent agreement with the electro-optic effect measurements and with our hydrodynamic model that predicts the ultra-fast transistor plasmonic response at the time scale much shorter than the electron transit time, in full agreement with the measured data.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Current driven "plasmonic boom" instability in three-dimensional gated periodic ballistic nanostructures

A new approach of using distributed transmission line analogy for solving transport equations for ballistic nanostructures is applied for solving the three dimensional problem of the electron transport in gated ballistic nanostructures with periodically changing width. The structures with the varying width allow for modulation of the electron drift velocity while keeping the plasma velocity constant. We predict that in such structures biased by a constant current, a periodic modulation of the electron drift velocity due the varying width results in the instability of the plasma waves if the electron drift velocity to plasma wave velocity ratio changes from below to above unity. The physics of such instability is similar to that of the sonic boom, but, in the periodically modulated structures, this analog of the sonic boom is repeated many times leading to a larger increment of the instability. The constant plasma velocity in the sections of different width leads to the resonant excitation of the unstable plasma modes with the varying bias current. This effect (that we refer to as the super plasmonic boom condition) results in a strong enhancement of the instability. The predicted instability involves the oscillating dipole charge carried by the plasma waves. The plasmons can be efficiently coupled to the terahertz (THz) electromagnetic radiation due to the periodic geometry of the gated structure. Our estimates show that the analyzed instability should enable powerful tunable terahertz electronic sources.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Performance Limits for Field Effect Transistors as Terahertz Detectors

We present estimates of the performance limits of terahertz detectors based on the field effect transistors (FET) in the regime of broadband detection. The maximal responsivity is predicted for short-channel FETs in the subthreshold regime. We also calculate the conversion efficiency Q of the device defined as the ratio of the power dissipated by radiation-induced dc current to the THz dissipated power. We show that Q has an absolute maximum as a function of two variables: the power and the frequency of the incoming radiation. The maximal value of Q is on the order of 10%

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Low-Frequency Current Fluctuations in Graphene-like Exfoliated Thin-Films of Topological Insulators

We report on the low-frequency current fluctuations and electronic noise in thin-films made of bismuth selenide topological insulators. The films were prepared via the graphene-like mechanical exfoliation and used as the current conducting channels in the four- and two-contact devices. Analysis of the resistance dependence on the film thickness indicates that the surface contribution to conductance is dominant in our samples. It was established that the current fluctuations have the noise spectrum close to the pure 1/f in the frequency range from 1 to 10 kHz (f is the frequency). The relative noise amplitude S/I^2 for the examined films was increasing from ~5x10^-8 to 5x10^-6 (1/Hz) as the resistance of the channels varied from ~10^3 to 10^5 Ohms. The obtained noise data is important for understanding electron transport through the surface and volume of topological insulators, and proposed applications of this class of materials.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Electrical and Noise Characteristics of Graphene Field-Effect Transistors: Ambient Effects and Noise Sources

We fabricated a large number of single and bilayer graphene transistors and carried out a systematic experimental study of their low-frequency noise characteristics. A special attention was given to determining the dominant noise sources in these devices and the effect of aging on the current-voltage and noise characteristics. The analysis of the noise spectral density dependence on the area of graphene channel showed that the dominant contributions to the low-frequency electronic noise come from the graphene layer itself rather than from the contacts. Aging of graphene transistors due to exposure to ambient for over a month resulted in substantially increased noise attributed to the decreasing mobility of graphene and increasing contact resistance. The noise spectral density in both single and bilayer graphene transistors either increased with deviation from the charge neutrality point or depended weakly on the gate bias. This observation confirms that the low-frequency noise characteristics of graphene transistors are qualitatively different from those of conventional silicon metal-oxide-semiconductor field-effect transistors.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Low-noise top-gate graphene transistors

We report results of experimental investigation of the low-frequency noise in the top-gate graphene transistors. The back-gate graphene devices were modified via addition of the top gate separated by 20 nm of HfO2 from the single-layer graphene channels. The measurements revealed low flicker noise levels with the normalized noise spectral density close to 1/f (f is the frequency) and Hooge parameter below 2 x 10^-3. The analysis of the noise spectral density dependence on the top and bottom gate biases helped us to elucidate the noise sources in these devices and develop a strategy for the electronic noise reduction. The obtained results are important for all proposed graphene applications in electronics and sensors.

0 citations0 reviewsNo code linkedOpen access