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Researcher profile

A. A. Balandin

A. A. Balandin contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.app-ph

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Published work

18 published item(s)

preprint2019arXiv

Electric Switching of the Charge-Density-Wave and Normal Metallic Phases in Tantalum Disulfide Thin-Film Devices

We report on switching among three charge-density-wave phases - commensurate, nearly commensurate, incommensurate - and the high-temperature normal metallic phase in thin-film 1T-TaS2 devices induced by application of an in-plane electric field. The electric switching among all phases has been achieved over a wide temperature range, from 77 K to 400 K. The low-frequency electronic noise spectroscopy has been used as an effective tool for monitoring the transitions, particularly the switching from the incommensurate charge-density-wave phase to the normal metal phase. The noise spectral density exhibits sharp increases at the phase transition points, which correspond to the step-like changes in resistivity. Assignment of the phases is consistent with low-field resistivity measurements over the temperature range from 77 K to 600 K. Analysis of the experimental data and calculations of heat dissipation suggest that Joule heating plays a dominant role in the electric-field induced transitions in the tested 1T-TaS2 devices on Si/SiO2 substrates. The possibility of electrical switching among four different phases of 1T-TaS2 is a promising step toward nanoscale device applications. The results also demonstrate the potential of noise spectroscopy for investigating and identifying phase transitions in materials.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Anisotropy of Thermal Conductivity of Free-Standing Reduced Graphene Oxide Films Annealed at High Temperature

We investigated thermal conductivity of free-standing reduced graphene oxide films subjected to a high-temperature treatment of up to 1000 C. It was found that the high-temperature annealing dramatically increased the in-plane thermal conductivity, K, of the films from 3 W/mK to 61 W/mK at room temperature. The cross-plane thermal conductivity, Kc, revealed an interesting opposite trend of decreasing to a very small value of 0.09 W/mK in the reduced graphene oxide films annealed at 1000 C. The obtained films demonstrated an exceptionally strong anisotropy of the thermal conductivity, K/Kc ~ 675, which is substantially larger even than in the high-quality graphite. The electrical resistivity of the annealed films reduced to 1 - 19 Ohms/sq. The observed modifications of the in-plane and cross-plane thermal conductivity components resulting in an unusual K/Kc anisotropy were explained theoretically. The theoretical analysis suggests that K can reach as high as ~500 W/mK with the increase in the sp2 domain size and further reduction of the oxygen content. The strongly anisotropic heat conduction properties of these films can be useful for applications in thermal management.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Magnetically-Functionalized Self-Aligning Graphene Fillers for High-Efficiency Thermal Management Applications

We report on heat conduction properties of thermal interface materials with self-aligning "magnetic grapheme" fillers. Graphene enhanced nano-composites were synthesized by an inexpensive and scalable technique based on liquid-phase exfoliation. Functionalization of graphene and few-layer-graphene flakes with Fe3O4 nanoparticles allowed us to align the fillers in an external magnetic field during dispersion of the thermal paste to the connecting surfaces. The filler alignment results in a strong increase of the apparent thermal conductivity and thermal diffusivity through the layer of nano-composite inserted between two metallic surfaces. The self-aligning "magnetic grapheme" fillers improve heat conduction in composites with both curing and non-curing matrix materials. The thermal conductivity enhancement with the oriented fillers is a factor of two larger than that with the random fillers even at the low ~1 wt. % of graphene loading. The real-life testing with computer chips demonstrated the temperature rise decrease by as much as 10oC with use of the non-curing thermal interface material with ~1 wt. % of the oriented fillers. Our proof-of-concept experiments suggest that the thermal interface materials with functionalized graphene and few-layer-graphene fillers, which can be oriented during the composite application to the surfaces, can lead to a new method of thermal management of advanced electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

The Commensurate-Incommensurate Charge-Density-Wave Transition and Phonon Zone Folding in 1T-TaSe2 Thin Films

Bulk 1T-TaSe2 exhibits unusually high charge density wave (CDW) transition temperatures of 600 K and 473 K below which the material exists in the incommensurate (I-CDW) and the commensurate (C-CDW) charge-density-wave phases, respectively. The C-CDW reconstruction of the lattice coincides with new Raman peaks resulting from zone-folding of phonon modes from middle regions of the original Brillouin zone back to the Gamma point. The C-CDW transition temperatures as a function of film thickness are determined from the evolution of these new Raman peaks and they are found to decrease from 473K to 413K as the film thicknesses decrease from 150 nm to 35 nm. A comparison of the Raman data with ab initio calculations of both the normal and C-CDW phases gives a consistent picture of the zone-folding of the phonon modes following lattice reconstruction. In the I-CDW phase, the loss of translational symmetry coincides with a strong suppression and broadening of the Raman peaks. The observed change in the C-CDW transition temperature is consistent with total energy calculations of bulk and monolayer 1T-TaSe2.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

High-Temperature Performance of MoS2 Thin-Film Transistors: DC and Pulse Current-Voltage Characteristics

The measurements of the high - temperature current - voltage characteristics of MoS2 thin - film transistors show that the devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the DC and pulse measurements shows that the DC sub - linear and super - linear output characteristics of MoS2 thin - films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, an intriguing phenomenon of the "memory step" - a kink in the drain current - occurs at zero gate voltage irrespective of the threshold voltage value. The memory step effect was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The obtained results suggest new applications for MoS2 thin - film transistors in extreme - temperature electronics and sensors.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Selective Chemical Vapor Sensing with Few-Layer MoS2 Thin-Film Transistors

We demonstrated selective gas sensing with MoS2 thin-film transistors using the change in the channel conductance, characteristic transient time and low-frequency current fluctuations as the sensing parameters. The back-gated MoS2 thin-film field-effect transistors were fabricated on Si/SiO2 substrates and intentionally aged for a month to verify reliability and achieve better current stability. The same devices with the channel covered by 10 nm of Al2O3 were used as reference samples. The exposure to ethanol, acetonitrile, toluene, chloroform, and methanol vapors results in drastic changes in the source-drain current. The current can increase or decrease by more than two-orders of magnitude depending on the analyte. The reference devices with coated channel did not show any response. It was established that transient time of the current change and the normalized spectral density of the low-frequency current fluctuations can be used as additional sensing parameters for selective gas detection with thin-film MoS2 transistors.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Thermal Conductivity of Graphene Laminate: Making Plastic Thermally Conductive

We have investigated thermal conductivity of graphene laminate films deposited on polyethylene terephthalate substrates. Two types of graphene laminate were studied - as deposited and compressed - in order to determine the physical parameters affecting the heat conduction the most. The measurements were performed using the optothermal Raman technique and a set of suspended samples with the graphene laminate thickness from 9 to 44 micrometers. The thermal conductivity of graphene laminate was found to be in the range from 40 W/mK to 90 W/mK at room temperature. It was found unexpectedly that the average size and the alignment of graphene flakes are more important parameters defining the heat conduction than the mass density of the graphene laminate. The thermal conductivity scales up linearly with the average graphene flake size in both uncompressed and compressed laminates. The compressed laminates have higher thermal conductivity for the same average flake size owing to better flake alignment. The possibility of up to 600X enhancement of the thermal conductivity of plastic materials by coating them with the thin graphene laminate films has important practical implications.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

All-Metallic Electrically-Gated Tantalum Diselenide Switches and Logic Circuits

We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe2 were exfoliated mechanically from single crystals grown by the chemical vapor transport method. Devices with nanometer-scale thicknesses exhibit strongly non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. We have found that the drain-source current in thin-film 2H-TaSe2-Ti/Au devices reproducibly shows an abrupt transition from a highly resistive to a conductive state, with the threshold tunable via the gate voltage. Such current-voltage characteristics can be used in principle for implementing radiation-hard all-metallic logic circuits. These results may open new application space for thin films of van der Waals materials.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Low-Frequency 1/f Noise in Molybdenum Disulfide Transistors

We report on the results of the low-frequency (1/f, where f is frequency) noise measurements in MoS2 field-effect transistors revealing the relative contributions of the MoS2 channel and Ti/Au contacts to the overall noise level. The investigation of the 1/f noise was performed for both as fabricated and aged transistors. It was established that the McWhorter model of the carrier number fluctuations describes well the 1/f noise in MoS2 transistors, in contrast to what is observed in graphene devices. The trap densities extracted from the 1/f noise data for MoS2 transistors, are 1.5 x 10^19 eV-1cm-3 and 2 x 10^20 eV-1cm-3 for the as fabricated and aged devices, respectively. It was found that the increase in the noise level of the aged MoS2 transistors is due to the channel rather than the contact degradation. The obtained results are important for the proposed electronic applications of MoS2 and other van der Waals materials.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Phonon and Thermal Properties of Exfoliated Tantalum Diselenide Thin Films

We report on the phonon and thermal properties of thin films of tantalum diselenide (2H-TaSe2) obtained via the graphene-like mechanical exfoliation of crystals grown by chemical vapor transport. The ratio of the intensities of the Raman peak from the Si substrate and the E2g peak of TaSe2 presents a convenient metric for quantifying film thickness. The temperature coefficients for two main Raman peaks, A1g and E2g, are -0.013 and -0.0097 cm-1/oC, respectively. The Raman optothermal measurements indicate that the room temperature thermal conductivity in these films decreases from its bulk value of ~16 W/mK to ~9 W/mK in 45-nm thick films. The measurement of electrical resistivity of the field-effect devices with TaSe2 channels indicates that heat conduction is dominated by acoustic phonons in these van der Waals films. The scaling of thermal conductivity with the film thickness suggests that the phonon scattering from the film boundaries is substantial despite the sharp interfaces of the mechanically cleaved samples. These results are important for understanding the thermal properties of thin films exfoliated from TaSe2 and other metal dichalcogenides, as well as for evaluating self-heating effects in devices made from such materials.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Anomalous Electron Transport in Field-Effect Transistors with Titanium Ditelluride Semimetal Thin-Film Channels

We report on "graphene-like" mechanical exfoliation of thin films of titanium ditelluride and investigation of their electronic properties. The exfoliated crystalline TiTe2 films were used as the channel layers in the back-gated field-effect transistors fabricated with Ti/Al/Au metal contacts on SiO2/Si substrates. The room-temperature current-voltage characteristics revealed strongly non-linear behavior with signatures of the source-drain threshold voltage similar to those observed in the charge-density-wave devices. The drain-current showed an unusual non-monotonic dependence on the gate bias characterized by the presence of multiple peaks. The obtained results can be potentially used for implementation of the non-Boolean logic gates.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Micro-Raman Spectroscopy of Mechanically Exfoliated Few-Quintuple Layers of Bi(2)Te(3), Bi(2)Se(3) and Sb(2)Te(3) Materials

Bismuth telluride - Bi(2)Te(3)- and related compounds have recently attracted strong interest owing to the discovery of the topological insulator properties in many members of this family of materials. The few-quintuple films of these materials are particularly interesting from the physics point of view. We report results of the micro-Raman spectroscopy study of the "graphene-like" exfoliated few-quintuple layers of Bi(2)Te(3), Bi(2)Se(3) and Sb(2)Te(3). It is found that crystal symmetry breaking in few-quintuple films results in appearance of A1u-symmetry Raman peaks, which are not active in the bulk crystals. The scattering spectra measured under the 633-nm wavelength excitation reveals a number of resonant features, which could be used for analysis of the electronic and phonon processes in these materials. In order to elucidate the influence of substrates on the few-quintuple-thick topological insulators we examined the Raman spectra of these films placed on mica, sapphire and hafnium-oxide substrates. The obtained results help to understand the physical mechanisms of Raman scattering in the few-quintuple-thick films and can be used for nanometrology of topological insulator films on various substrates.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Low-Frequency Current Fluctuations in Graphene-like Exfoliated Thin-Films of Topological Insulators

We report on the low-frequency current fluctuations and electronic noise in thin-films made of bismuth selenide topological insulators. The films were prepared via the graphene-like mechanical exfoliation and used as the current conducting channels in the four- and two-contact devices. Analysis of the resistance dependence on the film thickness indicates that the surface contribution to conductance is dominant in our samples. It was established that the current fluctuations have the noise spectrum close to the pure 1/f in the frequency range from 1 to 10 kHz (f is the frequency). The relative noise amplitude S/I^2 for the examined films was increasing from ~5x10^-8 to 5x10^-6 (1/Hz) as the resistance of the channels varied from ~10^3 to 10^5 Ohms. The obtained noise data is important for understanding electron transport through the surface and volume of topological insulators, and proposed applications of this class of materials.

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preprint2010arXiv

Crystal Symmetry Breaking in Few-Quintuple Bismuth Telluride Films: Applications in Nanometrology of Topological Insulators

We report results of micro-Raman spectroscopy investigation of the "graphene-like" mechanically exfoliated single-crystal bismuth telluride films with the thickness ranging from a few-nm-range to bulk limit. It is found that the optical phonon mode A1u, which is not-Raman active in bulk bismuth telluride crystals, appears in the atomically-thin films due to crystal-symmetry breaking. The intensity ratios of the out-of-plane A1u and A1g modes to the in-plane Eg mode grow with decreasing film thickness. The evolution of Raman signatures with the film thickness can be used for identification of bismuth telluride crystals with the thickness of few-quintuple layers, which are important for topological insulator and thermoelectric applications.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Electrical and Noise Characteristics of Graphene Field-Effect Transistors: Ambient Effects and Noise Sources

We fabricated a large number of single and bilayer graphene transistors and carried out a systematic experimental study of their low-frequency noise characteristics. A special attention was given to determining the dominant noise sources in these devices and the effect of aging on the current-voltage and noise characteristics. The analysis of the noise spectral density dependence on the area of graphene channel showed that the dominant contributions to the low-frequency electronic noise come from the graphene layer itself rather than from the contacts. Aging of graphene transistors due to exposure to ambient for over a month resulted in substantially increased noise attributed to the decreasing mobility of graphene and increasing contact resistance. The noise spectral density in both single and bilayer graphene transistors either increased with deviation from the charge neutrality point or depended weakly on the gate bias. This observation confirms that the low-frequency noise characteristics of graphene transistors are qualitatively different from those of conventional silicon metal-oxide-semiconductor field-effect transistors.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Tuning of Graphene Properties via Controlled Exposure to Electron Beams

Controlled modification of graphene properties is essential for its proposed electronic applications. Here we describe a possibility of tuning electrical properties of graphene via electron beam irradiation. We show that by controlling the irradiation dose one can change the carrier mobility and increase the resistance at the minimum conduction point in the single layer graphene. The bilayer graphene is less susceptible to the electron beam irradiation. The modification of graphene properties via irradiation can be monitored and quantified by the changes in the disorder D peak in Raman spectrum of graphene. The obtained results may lead to a new method of defect engineering of graphene physical properties, and to the procedure of "writing" graphene circuits via e-beam irradiation. The results also have implications for fabrication of graphene nanodevices, which involve scanning electron microscopy and electron beam lithography.

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preprint2009arXiv

Low-noise top-gate graphene transistors

We report results of experimental investigation of the low-frequency noise in the top-gate graphene transistors. The back-gate graphene devices were modified via addition of the top gate separated by 20 nm of HfO2 from the single-layer graphene channels. The measurements revealed low flicker noise levels with the normalized noise spectral density close to 1/f (f is the frequency) and Hooge parameter below 2 x 10^-3. The analysis of the noise spectral density dependence on the top and bottom gate biases helped us to elucidate the noise sources in these devices and develop a strategy for the electronic noise reduction. The obtained results are important for all proposed graphene applications in electronics and sensors.

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preprint2009arXiv

Thermal conductivity of graphene flakes: Comparison with bulk graphite

The authors proposed a simple model for the lattice thermal conductivity of graphene in the framework of Klemens approximation. The Gruneisen parameters were introduced separately for the longitudinal and transverse phonon branches through averaging over phonon modes obtained from the first-principles. The calculations show that Umklapp-limited thermal conductivity of graphene grows with the increasing linear dimensions of graphene flakes and can exceed that of the basal planes of bulk graphite when the flake size is on the order of few micrometers. The obtained results are in agreement with experimental data and reflect the two-dimensional nature of phonon transport in graphene.

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