Researcher profile

M. Sacchi

M. Sacchi contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2020arXiv

Magnetoresistance in Fe$_{1-x}$Ga$_x$ thin films presenting striped magnetic pattern: the role of closure domains and domain walls

In this work we show the existence of closure domains in Fe$_{1-x}$Ga$_x$ thin films featuring a striped magnetic pattern and study the effect of the magnetic domain arrangement on the magnetotransport properties. By means of X-ray resonant magnetic scattering, we experimentally demonstrate the presence of such closure domains and estimate their sizes and relative contribution to surface magnetization. Magnetotransport experiments show that the behavior of the magnetoresistance depends on the measurement geometry as well as on the temperature. When the electric current ows perpendicular to the stripe direction, the resistivity decreases when a magnetic field is applied along the stripe direction (negative magnetoresistance) in all the studied temperature range, and the calculations indicate that the main source is the anisotropic magnetoresistance. In the case of current flowing parallel to the stripe domains, the magnetoresistance changes sign, being positive at room temperature and negative at 100 K. To explain this behavior, the contribution to magnetoresistance from the domain walls must be considered besides the anisotropic one.

preprint2020arXiv

Tunable electronic structure and stoichiometry dependent disorder in Nanostructured VO$_x$ films

We present and discuss an original method to synthesize disordered Nanostructured (NS) VO$_x$ films with controlled stoichiometry and tunable electronic structures. In these NS films, the original lattice symmetry of the bulk vanadium oxides is broken and atoms are arranged in a highly disordered structure . The stoichiometry-dependent disorder as a function of the oxygen concentration has been characterized by in-situ X-ray Absorption Near-Edge Structure (XANES) spectroscopy identifying the spectroscopic fingerprints. Results show structural rearrangements that deviate from the octahedral symmetry with different coexisting disordered phases. The modulation of the electronic structure of the NS films based on the resulted stoichiometry and the quantum confinement in the NS particles are also discussed. We demonstrate the possibility to modulate the electronic structure of VO$_x$ NS films accessing new disordered atomic configurations with a controlled stoichiometry that provides an extraordinary opportunity to match a wide number of technological applications.