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M. R. Beasley

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cond-mat.str-el cond-mat.mtrl-sci cond-mat.supr-con cond-mat.other

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preprint2016arXiv

Strain Control of Fermiology and Many-Body Interactions in Two-Dimensional Ruthenates

Here we demonstrate how the Fermi surface topology and quantum many-body interactions can be manipulated via epitaxial strain in the spin-triplet superconductor Sr$_2$RuO$_4$ and its isoelectronic counterpart Ba$_2$RuO$_4$ using oxide molecular beam epitaxy (MBE), \emph{in situ} angle-resolved photoemission spectroscopy (ARPES), and transport measurements. Near the topological transition of the $γ$ Fermi surface sheet, we observe clear signatures of critical fluctuations, while the quasiparticle mass enhancement is found to increase rapidly and monotonically with increasing Ru-O bond distance. Our work demonstrates the possibilities for using epitaxial strain as a disorder-free means of manipulating emergent properties, many-body interactions, and potentially the superconductivity in correlated materials.

preprint2014arXiv

Stripe-like nanoscale structural phase separation and optimal inhomogeneity in superconducting BaPb$_{1-x}$Bi$_x$O$_3$

Structural phase separation in the form of partially disordered stripes, with characteristic length scales in the nanometer range, is observed for superconducting BaPb$_{1-x}$Bi$_x$O$_3$. The evolution of the superconducting coherence length with composition relative to the size of these stripes suggests an important role of the nanostructure in determining the shape of the superconducting dome. It is proposed that the maximum $T_c$ is determined by a kind of "optimal inhomogeneity", characterized by a crossover from an inhomogeneous macroscopic superconductor to a granular superconductor for which phase fluctuations suppress $T_c$.

preprint2012arXiv

Field-Tuned Superconductor-Insulator Transition in BaPb1-xBixO3

BaPb$_{1-x}$Bi$_x$O$_3$ is found to exhibit a field-tuned superconductor to insulator transition for Bi compositions 0.24 $\leq x \leq$ 0.29. The magnetoresistance of optimally doped samples manifests a temperature-independent crossing point and scaling of the form $ρ(T,H)=ρ_c F(|H-H_{c}|T^{-1/zν})$, where $H_c$ is the field determined by the temperature-independent crossing point, and $zν$ = 0.69 $\pm$ 0.03. High resolution transmission electron microscopy measurements reveal a complex intergrown nanostructure comprising tetragonal and orthorhombic polymorphs. Data are analyzed in terms of both a classical effective medium theory and a field-tuned quantum phase transition, neither of which provides a completely satisfactory explanation for this remarkable phenomenology.

preprint2008arXiv

Critical thickness for itinerant ferromagnetism in ultrathin films of SrRuO$_3$

Ultrathin films of the itinerant ferromagnet SrRuO$_3$ were studied using transport and magnto-optic polar Kerr effect. We find that below 4 monolayers the films become insulating and their magnetic character changes as they loose their simple ferromagnetic behavior. We observe a strong reduction in the magnetic moment which for 3 monolayers and below lies in the plane of the film. Exchange-bias behavior is observed below the critical thickness, and may point to induced antiferromagnetism in contact with ferromagnetic regions.

preprint2006arXiv

Determination of the resistivity anisotropy of SrRuO$_{3}$ by measuring the planar Hall effect

We have measured the planar Hall effect in epitaxial thin films of the itinerant ferromagnet SrRuO3 patterned with their current paths at different angles relative to the crystallographic axes. Based on the results, we have determined that SrRuO3 exhibits small resistivity anisotropy in the entire temperature range of our measurements (between 2 to 300 K); namely, both above and below its Curie temperature (~150 K). It means that in addition to anisotropy related to magnetism, the resistivity anisotropy of SrRuO3 has an intrinsic, nonmagnetic source. We have found that the two sources of anisotropy have competing effects.

preprint2005arXiv

Tunneling density of states as a function of thickness in superconductor/ strong ferromagnet bilayers

We have made an experimental study of the tunneling density of states (DOS) in strong ferromagnetic thin films (CoFe) in proximity with a thick superconducting film (Nb) as a function of $d_F$, the ferromagnetic thickness. Remarkably, we find that as $d_F$ increases, the superconducting DOS exhibits a scaling behavior in which the deviations from the normal-state conductance have a universal shape that decreases exponentially in amplitude with characteristic length $d^*\approx 0.4$ nm. We do not see oscillations in the DOS as a function of $d_F$, as expected from predictions based on the Usadel equations, although an oscillation in $T_c(d_F)$ has been seen in the same materials.

preprint2003arXiv

Large anisotropy in the paramagnetic susceptibility of SrRuO3 films

By using the extraordinary Hall effect in SrRuO3 films we performed sensitive measurements of the paramagnetic susceptibility in this itinerant ferromagnet, from Tc (~ 150 K) to 300 K. These measurements, combined with measurements of magnetoresistance, reveal that the susceptibility, which is almost isotropic at 300 K, becomes highly anisotropic as the temperature is lowered, diverging along a single crystallographic direction in the vicinity of Tc. The results provide a striking manifestation of the effect of exceptionally large magnetocrystalline anisotropy in the paramagnetic state of a 4d itinerant ferromagnet.

preprint2003arXiv

Paramagnetic anisotropic magnetoresistance in thin films of SrRuO3

SrRuO3 is an itinerant ferromagnet and in its thin film form when grown on miscut SrTiO3 it has Tc of ~ 150 K and strong uniaxial anisotropy. We measured both the Hall effect and the magnetoresistance (MR) of the films as a function of the angle between the applied field and the normal to the films at temperatures above Tc. We extracted the extraordinary Hall effect that is proportional to the perpendicular component of the magnetization and thus the MR for each angle of the applied field could be correlated with the magnitude and orientation of the induced magnetization. We successfully fit the MR data with a second order magnetization expansion, which indicates large anisotropic MR in the paramagnetic state. The extremum values of resistivity are not obtained for currents parallel or perpendicular to the magnetization, probably due to the crystal symmetry.

preprint2000arXiv

Deviations from Matthiessen's Rule for ${\rm SrRuO_3}$ and ${\rm CaRuO_3}$

We have measured the change in the resistivity of thin films of ${\rm SrRuO_3}$ and ${\rm CaRuO_3}$ upon introducing point defects by electron irradiation at low temperatures, and we find significant deviations from Matthiessen's rule. For a fixed irradiation dose, the induced change in resistivity {\it decreases} with increasing temperature. Moreover, for a fixed temperature, the increase in resistivity with irradiation is found to be {\it sublinear}. We suggest that the observed behavior is due to the marked anisotropic scattering of the electrons together with their relatively short mean free path (both characteristic of many metallic oxides including cuprates) which amplify effects related to the Pippard ineffectiveness condition.

preprint1999arXiv

Observation of domain wall resistivity in $\rm SrRuO_3$

$\rm SrRuO_3$ is an itinerant ferromagnet with $T_c \sim 150 \rm K$. When $\rm SrRuO_3$ is cooled through $T_c$ in zero applied magnetic field, a stripe domain structure appears whose orientation is uniquely determined by the large uniaxial magnetocrystalline anisotropy. We find that the ferromagnetic domain walls clearly enhance the resisitivity of $\rm SrRuO_3$ and that the enhancement has different temperature dependence for currents parallel and perpendicular to the domain walls. We discuss possible interpretations of our results.