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Researcher profile

Isaschar Genish

Isaschar Genish contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.str-el

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Published work

2 published item(s)

preprint2003arXiv

Large anisotropy in the paramagnetic susceptibility of SrRuO3 films

By using the extraordinary Hall effect in SrRuO3 films we performed sensitive measurements of the paramagnetic susceptibility in this itinerant ferromagnet, from Tc (~ 150 K) to 300 K. These measurements, combined with measurements of magnetoresistance, reveal that the susceptibility, which is almost isotropic at 300 K, becomes highly anisotropic as the temperature is lowered, diverging along a single crystallographic direction in the vicinity of Tc. The results provide a striking manifestation of the effect of exceptionally large magnetocrystalline anisotropy in the paramagnetic state of a 4d itinerant ferromagnet.

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preprint2003arXiv

Paramagnetic anisotropic magnetoresistance in thin films of SrRuO3

SrRuO3 is an itinerant ferromagnet and in its thin film form when grown on miscut SrTiO3 it has Tc of ~ 150 K and strong uniaxial anisotropy. We measured both the Hall effect and the magnetoresistance (MR) of the films as a function of the angle between the applied field and the normal to the films at temperatures above Tc. We extracted the extraordinary Hall effect that is proportional to the perpendicular component of the magnetization and thus the MR for each angle of the applied field could be correlated with the magnitude and orientation of the induced magnetization. We successfully fit the MR data with a second order magnetization expansion, which indicates large anisotropic MR in the paramagnetic state. The extremum values of resistivity are not obtained for currents parallel or perpendicular to the magnetization, probably due to the crystal symmetry.

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