Researcher profile

M. Prunnila

M. Prunnila contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2021arXiv

Coulomb Blockade Thermometry on a Wide Temperature Range

The Coulomb Blockade Thermometer (CBT) is a primary thermometer for cryogenic temperatures, with demonstrated operation from below 1 mK up to 60 K. Its performance as a primary thermometer has been verified at temperatures from 20 mK to 200 mK at uncertainty level below 1 % (k = 2). In a new project, our aim is to extend the metrologically verified temperature range of the primary CBT up to 25 K. We also demonstrate close-to-ideal operation of a CBT with only two tunnel junctions when the device is embedded in a low-impedance environment.

preprint2018arXiv

Nanobolometer with Ultralow Noise Equivalent Power

Since the introduction of bolometers more than a century ago, they have been applied in a broad spectrum of contexts ranging from security and the construction industry to particle physics and astronomy. However, emerging technologies and missions call for faster bolometers with lower noise. Here, we demonstrate a nanobolometer that exhibits roughly an order of magnitude lower noise equivalent power, $20\textrm{ zW}/\sqrt{\textrm{Hz}}$, than previously reported for any bolometer. Importantly, it is more than an order of magnitude faster than other low-noise bolometers, with a time constant of 30 $μ$s at $60\textrm{ zW}/\sqrt{\textrm{Hz}}$. These results suggest a calorimetric energy resolution of $0.3\textrm{ zJ}=h\times 0.4$ THz with a time constant of 30 $μ$s. Thus the introduced nanobolometer is a promising candidate for future applications requiring extreme precision and speed such as those in astronomy and terahertz photon counting.

preprint2011arXiv

Strain control of electron-phonon energy loss rate in many-valley semiconductors

We demonstrate significant modification of the electron-phonon energy loss rate in a many-valley semiconductor system due to lattice mismatch induced strain. We show that the thermal conductance from the electron system to the phonon bath in strained n + Si, at phonon temperatures between 200 mK and 450 mK, is more than an order of magnitude lower than that for a similar unstrained sample.

preprint2011arXiv

Strain enhanced electron cooling in a degenerately doped semiconductor

Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 um^3. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon control (300 mK to 258 mK) being attributed to the smaller electron-phonon coupling in the strained case. Modeling and the resulting predictions of silicon-based cooler performance are presented. Further reductions in the minimum temperature are expected if the junction sub-gap leakage and tunnel resistance can be reduced. However, if only tunnel resistance is reduced, Joule heating is predicted to dominate.