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D. Gunnarsson

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.supr-con

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preprint2015arXiv

Nanoelectronic thermometers optimised for sub-10 millikelvin operation

We report the cooling of electrons in nanoelectronic Coulomb blockade thermometers below 4 mK. Above 7 mK the devices are in good thermal contact with the environment, well isolated from electrical noise, and not susceptible to self-heating. This is attributed to an optimised design that incorporates cooling fins with a high electron-phonon coupling and on-chip electronic filters, combined with a low-noise electronic measurement setup. Below 7 mK the electron temperature is seen to diverge from the ambient temperature. By immersing a Coulomb Blockade Thermometer in the 3He/4He refrigerant of a dilution refrigerator, we measure a lowest electron temperature of 3.7 mK.

preprint2013arXiv

Primary thermometry in the intermediate Coulomb blockade regime

We investigate Coulomb blockade thermometers (CBT) in an intermediate temperature regime, where measurements with enhanced accuracy are possible due to the increased magnitude of the differential conductance dip. Previous theoretical results show that corrections to the half width and to the depth of the measured conductance dip of a sensor are needed, when leaving the regime of weak Coulomb blockade towards lower temperatures. In the present work, we demonstrate experimentally that the temperature range of a CBT sensor can be extended by employing these corrections without compromising the primary nature or the accuracy of the thermometer.

preprint2011arXiv

Strain control of electron-phonon energy loss rate in many-valley semiconductors

We demonstrate significant modification of the electron-phonon energy loss rate in a many-valley semiconductor system due to lattice mismatch induced strain. We show that the thermal conductance from the electron system to the phonon bath in strained n + Si, at phonon temperatures between 200 mK and 450 mK, is more than an order of magnitude lower than that for a similar unstrained sample.

preprint2011arXiv

Strain enhanced electron cooling in a degenerately doped semiconductor

Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 um^3. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon control (300 mK to 258 mK) being attributed to the smaller electron-phonon coupling in the strained case. Modeling and the resulting predictions of silicon-based cooler performance are presented. Further reductions in the minimum temperature are expected if the junction sub-gap leakage and tunnel resistance can be reduced. However, if only tunnel resistance is reduced, Joule heating is predicted to dominate.

preprint2010arXiv

Ex-situ Tunnel Junction Process Technique Characterized by Coulomb Blockade Thermometry

We investigate a wafer scale tunnel junction fabrication method, where a plasma etched via through a dielectric layer covering bottom Al electrode defines the tunnel junction area. The ex-situ tunnel barrier is formed by oxidation of the bottom electrode in the junction area. Room temperature resistance mapping over a 150 mm wafer give local deviation values of the tunnel junction resistance that fall below 7.5 % with an average of 1.3 %. The deviation is further investigated by sub-1 K measurements of a device, which has one tunnel junction connected to four arrays consisting of N junctions (N = 41, junction diameter 700 nm). The differential conductance is measured in single-junction and array Coulomb blockade thermometer operation modes. By fitting the experimental data to the theoretical models we found an upper limit for the local tunnel junction resistance deviation of ~5 % for the array of 2N+1 junctions. This value is of the same order as the minimum detectable deviation defined by the accuracy of our experimental setup.

preprint2006arXiv

Shot noise of a multiwalled carbon nanotube field effect transistor

We have investigated shot noise in a 6-nm-diameter, semiconducting multiwalled carbon nanotube FET at 4.2 K over the frequency range 600 - 950 MHz. We find a transconductance of 3 - 3.5 $μ$S for optimal positive and negative source-drain voltages V. For the gate referred input voltage noise, we obtain 0.2 and 0.3 $μ{V}/ \sqrt{Hz}$ for V>0 and V<0, respectively. As effective charge noise this corresponds to $2-3 \cdot 10^{-5}$ e/$\sqrt{Hz}$.

preprint2005arXiv

Observation of quantum capacitance in the Cooper-pair transistor

We have fabricated a Cooper-pair transistor (CPT) with parameters such that for appropriate voltage biases, the sub-gap charge transport takes place via slow tunneling of quasiparticles that link two Josephson-coupled charge manifolds. In between the quasiparticle tunneling events, the CPT behaves essentially like a single Cooper-pair box (SCB). The effective capacitance of a SCB can be defined as the derivative of the induced charge with respect to gate voltage. This capacitance has two parts, the geometric capacitance, C_geom, and the quantum capacitance C_Q. The latter is due to the level anti-crossing caused by the Josephson coupling. It depends parametrically on the gate voltage and is dual to the Josephson inductance. Furthermore, it's magnitude may be substantially larger than C_geom. We have been able to detect C_Q in our CPT, by measuring the in-phase and quadrature rf-signal reflected from a resonant circuit in which the CPT is embedded. C_Q can be used as the basis of a charge qubit readout by placing a Cooper-pair box in such a resonant circuit.