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Researcher profile

M. P. Walser

M. P. Walser contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

5 published item(s)

preprint2014arXiv

Suppressed decay of a laterally confined persistent spin helix

We experimentally investigate the dynamics of a persistent spin helix in etched GaAs wire structures of 2 to 80 um width. Using magneto-optical Kerr rotation with high spatial resolution, we determine the lifetime of the spin helix. A few nanoseconds after locally injecting spin polarization into the wire, the polarization is strongly enhanced as compared to the two-dimensional case. This is mostly attributed to a transition to one-dimensional diffusion, strongly suppressing diffusive dilution of spin polarization. The intrinsic lifetime of the helical mode is only weakly increased, which indicates that the channel confinement can only partially suppress the cubic Dresselhaus spin-orbit interaction.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Dynamics of a localized spin excitation close to the spin-helix regime

The time evolution of a local spin excitation in a (001)-confined two-dimensional electron gas subjected to Rashba and Dresselhaus spin-orbit interactions of similar strength is investigated theoretically and compared with experimental data. Specifically, the consequences of the finite spatial extension of the initial spin polarization is studied for non-balanced Rashba and Dresselhaus terms and for finite cubic Dresselhaus spin-orbit interaction. We show that the initial out-of-plane spin polarization evolves into a helical spin pattern with a wave number that gradually approaches the value $q_0$ of the persistent spin helix mode. In addition to an exponential decay of the spin polarization that is proportional to both the spin-orbit imbalance and the cubic Dresselhaus term, the finite width $w$ of the spin excitation reduces the spin polarization by a factor that approaches $\exp(-q_0^2 w^2/2)$ at longer times.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Direct mapping of the formation of a persistent spin helix: Supplementary information

The spin-orbit interaction (SOI) in zincblende semiconductor quantum wells can be set to a symmetry point, in which spin decay is strongly suppressed for a helical spin mode. Signatures of such a persistent spin helix (PSH) have been probed using the transient spin grating technique, but it has not yet been possible to observe the formation and the helical nature of a PSH. Here we directly map the diffusive evolution of a local spin excitation into a helical spin mode by a time- and spatially resolved magneto-optical Kerr rotation technique. Depending on its in-plane direction, an external magnetic field interacts differently with the spin mode and either highlights its helical nature or destroys the SU(2) symmetry of the SOI and thus decreases the spin lifetime. All relevant SOI parameters are experimentally determined and confirmed with a numerical simulation of spin diffusion in the presence of SOI.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Role of linear and cubic terms for the drift-induced Dresselhaus spin-orbit splitting in a two-dimensional electron gas

The Dresselhaus spin-orbit interaction (SOI) of a series of two-dimensional electron gases (2DEGs) hosted in GaAs/AlGaAs and InGaAs/GaAs (001) quantum wells (QWs) is measured by monitoring the precession frequency of the spins as a function of an in-plane electric field. The measured spin-orbit-induced spin-splitting is linear in the drift velocity, even in the regime where the cubic Dresselhaus SOI is important. We relate the measured splitting to the Dresselhaus coupling parameter, the QW confinement, the Fermi wavenumber and to strain effects. From this, the coupling parameter is determined quantitatively, including its sign.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Low-voltage organic transistors and inverters with ultra-thin fluoropolymer gate dielectric

We report on the simple fabrication of hysteresis-free and electrically stable organic field-effect transistors (OFETs) and inverters operating at voltages <1-2 V, enabled by the almost trap-free interface between the organic semiconductor and an ultra-thin (<20 nm) and highly insulating single-layer fluoropolymer gate dielectric (Cytop). OFETs with PTCDI-C13 (N,N&#39;-ditridecylperylene-3,4,9,10-tetracarboxylicdiimide) as semiconductor exhibit outstanding transistor characteristics: very low threshold voltage (0.2V), onset at 0V, steep subthreshold swing (0.1-0.2 V/decade), no hysteresis and excellent stability against gate bias stress. It is gratifying to notice that such small OFET operating voltages can be achieved with the relatively simple processing techniques employed in this study.

0 citations0 reviewsNo code linkedOpen access