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M. Opel

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Published work

6 published item(s)

preprint2013arXiv

Converse Magnetoelectric Effects in Fe3O4/BaTiO3 Multiferroic Hybrids

The quantitative understanding of converse magnetoelectric effects, i.e., the variation of the magnetization as a function of an applied electric field, in extrinsic multiferroic hybrids is a key prerequisite for the development of future spintronic devices. We present a detailed study of the strain-mediated converse magnetoelectric effect in ferrimagnetic Fe3O4 thin films on ferroelectric BaTiO3 substrates at room temperature. The experimental results are in excellent agreement with numerical simulation based on a two-region model. This demonstrates that the electric field induced changes of the magnetic state in the Fe3O4 thin film can be well described by the presence of two different ferroelastic domains in the BaTiO3 substrate, resulting in two differently strained regions in the Fe3O4 film with different magnetic properties. The two-region model allows to predict the converse magnetoelectric effects in multiferroic hybrid structures consisting of ferromagnetic thin films on ferroelastic substrates.

preprint2012arXiv

Spin Hall Magnetoresistance Induced by a Non-Equilibrium Proximity Effect

We report anisotropic magnetoresistance in Pt|Y3Fe5O12 bilayers. In spite of Y3Fe5O12 being a very good electrical insulator, the resistance of the Pt layer reflects its magnetization direction. The effect persists even when a Cu layer is inserted between Pt and Y3Fe5O12, excluding the contribution of induced equilibrium magnetization at the interface. Instead, we show that the effect originates from concerted actions of the direct and inverse spin Hall effects and therefore call it "spin Hall magnetoresistance."

preprint2009arXiv

Epitaxial growth and magnetic properties of Sr2CrReO6 thin films

The double perovskite Sr2CrReO6 is an interesting material for spintronics, showing ferrimagnetism up to 635 K with a predicted high spin polarization of about 86%. We fabricated Sr2CrReO6 epitaxial films by pulsed laser deposition on (001)-oriented SrTiO3 substrates. Phase-pure films with optimum crystallographic and magnetic properties were obtained by growing at a substrate temperature of 700 degree C in pure O2 of 6.6x10-4 mbar. The films are c-axis oriented, coherently strained, and show less than 20% anti-site defects. The magnetization curves reveal high saturation magnetization of 0.8 muB per formula unit and high coercivity of 1.1 T, as well as a strong magnetic anisotropy.

preprint2009arXiv

Giant magnetic anisotropy changes in Sr2CrReO6 thin films on BaTiO3

The integration of ferromagnetic and ferroelectric materials into hybrid heterostructures yields multifunctional systems with improved or novel functionality. We here report on the structural, electronic and magnetic properties of the ferromagnetic double perovskite Sr2CrReO6, grown as epitaxial thin film onto ferroelectric BaTiO3. As a function of temperature, the crystal-structure of BaTiO3 undergoes phase transitions, which induce qualitative changes in the magnetic anisotropy of the ferromagnet. We observe abrupt changes in the coercive field of up to 1.2T along with resistance changes of up to 6.5%. These results are attributed to the high sensitivity of the double perovskites to mechanical deformation.

preprint2009arXiv

Magnetic interference patterns in 0-Pi SIFS Josephson junctions: effects of asymmetry between 0 and Pi regions

We present a detailed analysis of the dependence of the critical current I_c on the magnetic field B of 0, Pi, and 0-Pi superconductor-insulator-ferromagnet-superconductor Josephson junctions. I_c(B) of the 0 and Pi junction closely follows a Fraunhofer pattern, indicating a homogeneous critical current density j_c(x). The maximum of I_c(B) is slightly shifted along the field axis, pointing to a small remanent in-plane magnetization of the F-layer along the field axis. I_c(B) of the 0-Pi junction exhibits the characteristic central minimum. I_c however has a finite value here, due to an asymmetry of j_c in the 0 and Pi part. In addition, this I_c(B) exhibits asymmetric maxima and bumped minima. To explain these features in detail, flux penetration being different in the 0 part and the Pi part needs to be taken into account. We discuss this asymmetry in relation to the magnetic properties of the F-layer and the fabrication technique used to produce the 0-Pi junctions.

preprint1999arXiv

Carrier relaxation, pseudogap, and superconducting gap in high-Tc cuprates: A Raman scattering study

We describe results of electronic Raman-scattering experiments in differently doped single crystals of Y-123 and Bi-2212. The comparison of AF insulating and metallic samples suggests that at least the low-energy part of the spectra originates predominantly from excitations of free carriers. We therefore propose an analysis of the data in terms of a memory function approach. Dynamical scattering rates and mass-enhancement factors for the carriers are obtained. In B2g symmetry the Raman data compare well to the results obtained from ordinary and optical transport. For underdoped materials the dc scattering rates in B1g symmetry become temperature independent and considerably larger than in B2g symmetry. This increasing anisotropy is accompanied by a loss of spectral weight in B2g symmetry in the range between the superconducting transition at Tc and a characteristic temperature T* of order room temperature which compares well with the pseudogap temperature found in other experiments. The energy range affected by the pseudogap is doping and temperature independent. The integrated spectral loss is approximately 25% in underdoped samples and becomes much weaker towards higher carrier concentration. In underdoped samples, superconductivity related features in the spectra can be observed only in B2g symmetry. The peak frequencies scale with Tc. We do not find a direct relation between the pseudogap and the superconducting gap.