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M. N. Chen

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Published work

6 published item(s)

preprint2021arXiv

Giant anisotropic photocurrent modulated by strain in type-II Weyl semimetal Td-MoTe2

We build a Cu-MoTe2-Cu device model and use first-principles density functional theory to study the transport properties of single-layer Td-MoTe2. We obtained the effect of strain on the energy band structure, transport properties, and photocurrent. The strain-induced photocurrent shows an anisotropy that reflects the modulation of the energy bands, including the Weyl point, by strain. The photocurrent can be suppressed to almost zero when the strain is applied along the vacuum direction. In contrast, the photocurrent can be significantly increased when the strain is applied along the transport direction. The transport properties and magnitude of the photocurrent in the MoTe2-based device can be effectively modulated by adjusting the strength and direction of the strain.

preprint2021arXiv

Scaling of the Reduced Energy Spectrum of Random Matrix Ensemble

We study the reduced energy spectrum $\{E_{i}^{(n)}\}$, which is constructed by picking one level from every $n$ levels of the original spectrum $\{E_{i}\}$, in a Gaussian ensemble of random matrix with Dyson index $β\in \left( 0,\infty \right) $. It's shown $\{E_{i}^{(n)}\}$ bears the same form of probability distribution as $\{E_{i}\}$ with a rescaled parameter $γ=\frac{n(n+1)}{2}β+n-1$. Notably, the $n$-th order level spacing and non-overlapping gap ratio in $\{E_{i}\}$ become the lowest-order ones in $\{E_{i}^{(n)}\}$, hence their distributions will rescale in an identical way. Numerical evidences are provided by simulating random spin chain as well as modelling random matrices. Our results establish the higher-order spacing distributions in random matrix ensembles beyond GOE,GUE,GSE, and reveals a hierarchy of structures hidden in the energy spectrum.

preprint2021arXiv

Valley-dependent transport in strain engineering graphene heterojunctions

We study the effect of the strain on the band structure and the valley-dependent transport property of graphene heterojunctions. It is found that valley-dependent separation of electrons can be achieved by utilizing the strain and on-site energies. In the presence of the strain, the values of the transmission can be effectively adjusted by changing the strengths of the strain, while the transport angle basically keeps unchanged. When an extra on-site energy is simultaneously applied to the central scattering region, not only are the electrons of valleys K and K' separated into two distinct transmission lobes in opposite transverse directions, but the transport angles of two valleys can be significantly changed. Therefore, one can realize an effective modulation of valley-dependent transport by changing the strength and stretch angle of the strain and on-site energies, which can be exploited for graphene-based valleytronics devices.

preprint2016arXiv

Effect of the edge states on the conductance and thermopower in Zigzag Phosphorene Nanoribbons

We numerically study the effect of the edge states on the conductance and thermopower in zigzag phosphorene nanoribbons (ZPNRs) based on the tight-binding model and the scattering-matrix method. It is interesting to find that the band dispersion, conductance, and thermopower can be modulated by applying a bias voltage and boundary potentials to the two layers of the ZPNRs. Under the certain bias voltage, the two-fold degenerate quasi-flat edge bands split perfectly. The conductance can be switched off, and the thermopower around zero energy increases. In addition, when only the boundary potential of the top layer or bottom layer is adjusted, only one edge band bends and merges into the bulk band. The first conductance plateau is strongly decreased to $e^2/h$ around zero energy. Particularly, when the two boundary potentials are adjusted, all the edge bands bend and fully merge into the bulk band, and the bulk energy gap is maximized. More interestingly, a pronounced conductance plateau with $G=0$ is found around zero energy, which is attributable to the opening of the bulk energy gap between the valence and conduction bands. Meanwhile, the thermopower can be enhanced more than twice, compared to that of the perfect ZPNRs. The large magnitude of thermopower is ascribed to the appearance of the bulk energy gap around zero energy. Our results show that the modulated ZPNRs are more reliable in thermoelectric application.

preprint2016arXiv

Electron Interaction Effects in Periodically Driven Kitaev Model: Topology Breaking and Enhancement of Quantum Chaos

The effect of electron-electron interaction on Floquet topological superconducting chains is investigated numerically through full diagonalization and time evolution. The preservation of topology in the weak interacting regime is represented by a many-body form of the Majorana survival probability, and the emergence of chaos is characterized using the level statistics. In the presence of weak interaction, there appear a multitude of avoided crossings in quasi-energy spectra, and the resulting chaos is not full but can coexist with the topology. Strong interaction will lead the system into a topologically trivial and fully chaotic phase.

preprint2016arXiv

Spin Chern Pumping from the Bulk of Two-Dimensional Topological Insulators

Topological insulators (TIs) are a new quantum state of matter discovered recently, which are characterized by unconventional bulk topological invariants. Proposals for practical applications of the TIs are mostly based upon their metallic surface or edge states. Here, we report the theoretical discovery of a bulk quantum pumping effect in a two-dimensional TI electrically modulated in adiabatic cycles. In each cycle, an amount of spin proportional to the sample width can be pumped into a nonmagnetic electrode, which is attributed to nonzero spin Chern numbers $C_{\pm}$. Moreover, by using a half-metallic electrode, universal quantized charge pumping conductivities $-C_{\pm}e^2/h$ can be measured. This discovery paves the way for direct investigation of the robust topological properties of the TIs.