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Researcher profile

M. N. Chen

M. N. Chen contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.dis-nncond-mat.mtrl-sci

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Published work

3 published item(s)

preprint2021arXiv

Giant anisotropic photocurrent modulated by strain in type-II Weyl semimetal Td-MoTe2

We build a Cu-MoTe2-Cu device model and use first-principles density functional theory to study the transport properties of single-layer Td-MoTe2. We obtained the effect of strain on the energy band structure, transport properties, and photocurrent. The strain-induced photocurrent shows an anisotropy that reflects the modulation of the energy bands, including the Weyl point, by strain. The photocurrent can be suppressed to almost zero when the strain is applied along the vacuum direction. In contrast, the photocurrent can be significantly increased when the strain is applied along the transport direction. The transport properties and magnitude of the photocurrent in the MoTe2-based device can be effectively modulated by adjusting the strength and direction of the strain.

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preprint2021arXiv

Scaling of the Reduced Energy Spectrum of Random Matrix Ensemble

We study the reduced energy spectrum $\{E_{i}^{(n)}\}$, which is constructed by picking one level from every $n$ levels of the original spectrum $\{E_{i}\}$, in a Gaussian ensemble of random matrix with Dyson index $β\in \left( 0,\infty \right) $. It's shown $\{E_{i}^{(n)}\}$ bears the same form of probability distribution as $\{E_{i}\}$ with a rescaled parameter $γ=\frac{n(n+1)}{2}β+n-1$. Notably, the $n$-th order level spacing and non-overlapping gap ratio in $\{E_{i}\}$ become the lowest-order ones in $\{E_{i}^{(n)}\}$, hence their distributions will rescale in an identical way. Numerical evidences are provided by simulating random spin chain as well as modelling random matrices. Our results establish the higher-order spacing distributions in random matrix ensembles beyond GOE,GUE,GSE, and reveals a hierarchy of structures hidden in the energy spectrum.

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preprint2021arXiv

Valley-dependent transport in strain engineering graphene heterojunctions

We study the effect of the strain on the band structure and the valley-dependent transport property of graphene heterojunctions. It is found that valley-dependent separation of electrons can be achieved by utilizing the strain and on-site energies. In the presence of the strain, the values of the transmission can be effectively adjusted by changing the strengths of the strain, while the transport angle basically keeps unchanged. When an extra on-site energy is simultaneously applied to the central scattering region, not only are the electrons of valleys K and K' separated into two distinct transmission lobes in opposite transverse directions, but the transport angles of two valleys can be significantly changed. Therefore, one can realize an effective modulation of valley-dependent transport by changing the strength and stretch angle of the strain and on-site energies, which can be exploited for graphene-based valleytronics devices.

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