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Researcher profile

M. Mulazzi

M. Mulazzi contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-elcond-mat.other

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Published work

5 published item(s)

preprint2015arXiv

Comparative study of the electronic structures of the In and Sn/In2O3 (111) interfaces

The electronic structure of the transparent semiconductor In2O3 has been studied by angle resolved photoemission spectroscopy upon deposition of metallic indium and also tin on the surface of the semiconductor. By deposition of metallic indium on In2O3 (111) single crystals, we detected the formation of a free-electron like band of effective mass (0.38+-0.05) m0. At low coverages, metallic In shifts the Fermi level of In2O3 to higher energies and a new electronic state forms at the metal/semiconductor interface. This state of two-dimensional character (2D-electron gas) is completely responsible for the electrical conduction in In2O3 (111) at the surface region and has a band dispersion, which does not correspond to the previously found surface accumulation layers in this material. Despite the similarity of the electronic properties of In and Sn, a larger downward banding was observed by Sn coverage, which was not accompanied by the appearance of the surface state.

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preprint2015arXiv

Quantized electronic fine structure with large anisotropy in ferromagnetic Fe films

We report on the spectroscopic observation of a quantized electronic fine structure near the Fermi energy in thin Fe films grown on W(110). The quantum well states are detected down to binding energies of $\sim$10 meV by angle-resolved photoelectron spectroscopy. The band dispersion of these states is found to feature a pronounced anisotropy within the surface plane: It is free-electron like along the $\bar{Γ\rm{H}}$-direction while it becomes heavy along $\bar{Γ\rm{N}}$. Density functional theory calculations identify the observed states to have both majority and minority spin character and indicate that the large anisotropy can be dependent on the number of Fe-layers and coupling to the substrate.

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preprint2011arXiv

Common Origin of the Circular-dichroism Pattern in ARPES of SrTiO3 and CuxBi2Se3

Circular dichroism in the angular distribution (CDAD) of photoelectrons from SrTiO3:Nb and CuxBi2Se3 is investigated by 7-eV laser ARPES. In addition to the well-known node that occurs in CDAD when the incidence plane matches the mirror plane of the crystal, we show that another type of node occurs when the mirror plane of the crystal is vertical to the incidence plane and the electronic state is two dimensional. The flower-shaped CDAD's occurring around the Fermi level of SrTiO3:Nb and around the Dirac point of CuxBi2Se3 are explained on equal footings. We point out that the penetration depth of the topological states of CuxBi2Se3 depends on momentum.

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preprint2009arXiv

Out-of-plane nesting driven spin spiral in ultrathin Fe/Cu(001) films

Epitaxial ultrathin Fe films on fcc Cu(001) exhibit a spin spiral (SS), in contrast to the ferromagnetism of bulk bcc Fe. We study the in-plane and out-of-plane Fermi surfaces (FSs) of the SS in 8 monolayer Fe/Cu(001) films using energy dependent soft x-ray momentum-resolved photoemission spectroscopy. We show that the SS originates in nested regions confined to out-of-plane FSs, which are drastically modified compared to in-plane FSs. From precise reciprocal space maps in successive zones, we obtain the associated real space compressive strain of 1.5+-0.5% along c-axis. An autocorrelation analysis quantifies the incommensurate ordering vector q=(2pi/a)(0,0,~0.86), favoring a SS and consistent with magneto-optic Kerr effect experiments. The results reveal the importance of in-plane and out-of-plane FS mapping for ultrathin films.

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