Source author record

M. Marsi

M. Marsi appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

21works
5topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

21 published item(s)

preprint2026arXiv

About carrier's self-trapping and dynamical Rashba splitting in the two-dimensional hybrid perovskite (BA)$_2$(MA)$_2$Pb$_3$I$_{10}$

Time- and Angle-Resolved Photoelectron Spectroscopy (tr-ARPES) is employed to monitor photoexcited electrons in the two-dimensional hybrid perovskite (BA)$_2$(MA)$_2$Pb$_3$I$_{10}$. Photoelectron intensity maps are in good agreement with ab-initio calculations of the band structure. The effective mass is $-0.18 \pm 0.02 m_e$ and $0.12 \pm 0.02 m_e$ for holes and electrons, respectively. In the photoexcited state, spin-orbit splitting of the conduction band cannot be resolved. This sets the upper bound of photoinduced Rashba coupling to $α_C<2.5$ eVÅ. The correlated electron-hole plasma evolves in Wannier excitons with Bohr radius of 2.8 nm, while no sign of self-trapping in small polarons is found within the investigated time window of up to 120 ps following photoexcitation.

preprint2022arXiv

Dichroism in time-resolved ARPES and valence band orbital nature in BaNiS2

Time-resolved ARPES gives access to the band structure and ultrafast dynamics of excited electronic states in solids. The orbital character of the bands close to the Fermi level is essential to understand the origin of several exotic phenomena in quantum materials. By performing polarization dependent time- and angle-resolved photoemission spectroscopy and by analyzing the chirality of the photoelectron yield for two different crystal orientations, we identify the orbital character of bands below and above the chemical potential for the Dirac semimetal BaNiS2. Our results illustrate how the control and understanding of matrix elements effects in time-resolved photoemission spectroscopy can be a powerful tool for the study of quantum materials.

preprint2016arXiv

Time resolved photoemission of Sr$_2$IrO$_4$

We investigate the temporal evolution of electronic states in strontium iridate Sr$_2$IrO$_4$. The time resolved photoemission spectra of intrinsic, electron doped and the hole doped samples are monitored in identical experimental conditions. Our data on intrinsic and electron doped samples, show that primary doublon-holon pairs relax near to the chemical potential on a timescale shorter than $70$ fs. The subsequent cooling of low energy excitations takes place in two step: a rapid dynamics of $\cong120$ fs is followed by a slower decay of $\cong 1$ ps. The reported timescales endorse the analogies between Sr$_2$IrO$_4$ and copper oxides.

preprint2015arXiv

Giant Anisotropy of Spin-Orbit Splitting at the Bismuth Surface

We investigate the bismuth (111) surface by means of time and angle resolved photoelectron spectroscopy. The parallel detection of the surface states below and above the Fermi level reveals a giant anisotropy of the Spin-Orbit (SO) spitting. These strong deviations from the Rashba-like coupling cannot be treated in $\textbf{k}\cdot \textbf{p}$ perturbation theory. Instead, first principle calculations could accurately reproduce the experimental dispersion of the electronic states. Our analysis shows that the giant anisotropy of the SO splitting is due to a large out-of plane buckling of the spin and orbital texture.

preprint2015arXiv

Optical properties of V2O3 in its whole phase diagram

Vanadium sesquioxide V2O3 is considered a textbook example of Mott-Hubbard physics. In this paper we present an extended optical study of its whole temperature/doping phase diagram as obtained by doping the pure material with M=Cr or Ti atoms (V1-xMx)2O3. We reveal that its thermodynamically stable metallic and insulating phases, although macroscopically equivalent, show very different low-energy electrodynamics. The Cr and Ti doping drastically change both the antiferromagnetic gap and the paramagnetic metallic properties. A slight chromium content induces a mesoscopic electronic phase separation, while the pure compound is characterized by short-lived quasiparticles at high temperature. This study thus provides a new comprehensive scenario of the Mott-Hubbard physics in the prototype compound V2O3.

preprint2015arXiv

Quasiparticles dynamics in high-temperature superconductors far from equilibrium: an indication of pairing amplitude without phase coherence

We perform time resolved photoelectron spectroscopy measurements of optimally doped $\tn{Bi}_2\tn{Sr}_2\tn{CaCu}_2\tn{O}_{8+δ}$ (Bi-2212) and $\tn{Bi}_2\tn{Sr}_{2-x}\tn{La}_{x}\tn{Cu}\tn{O}_{6+δ}$ (Bi-2201). The electrons dynamics show that inelastic scattering by nodal quasiparticles decreases when the temperature is lowered below the critical value of the superconducting phase transition. This drop of electronic dissipation is astonishingly robust and survives to photoexcitation densities much larger than the value sustained by long-range superconductivity. The unconventional behaviour of quasiparticle scattering is ascribed to superconducting correlations extending on a length scale comparable to the inelastic path. Our measurements indicate that strongly driven superconductors enter in a regime without phase coherence but finite pairing amplitude. The latter vanishes near to the critical temperature and has no evident link with the pseudogap observed by Angle Resolved Photoelectron Spectroscopy (ARPES).

preprint2015arXiv

Surface effects on the Mott-Hubbard transition in archetypal V$_2$O$_3$

We present an experimental and theoretical study exploring surface effects on the evolution of the metal-insulator transition in the model Mott-Hubbard compound Cr-doped V$_2$O$_3$. We find a microscopic domain formation that is clearly affected by the surface crystallographic orientation. Using scanning photoelectron microscopy and X-ray diffraction, we find that surface defects act as nucleation centers for the formation of domains at the temperature-induced isostructural transition and favor the formation of microscopic metallic regions. A density functional theory plus dynamical mean field theory study of different surface terminations shows that the surface reconstruction with excess vanadyl cations leads to doped, and hence more metallic surface states, explaining our experimental observations.

preprint2013arXiv

Mott-Hubbard transition in V2O3 revisited

The isostructural metal-insulator transition in Cr-doped V2O3 is the textbook example of a Mott-Hubbard transition between a paramagnetic metal and a paramagnetic insulator. We review recent theoretical calculations as well as experimental findings which shed new light on this famous transition. In particular, the old paradigm of a doping-pressure equivalence does not hold, and there is a microscale phase separation for Cr-doped V2O3.

preprint2013arXiv

Tuning a Schottky barrier in a photoexcited topological insulator with transient Dirac cone electron-hole asymmetry

The advent of Dirac materials has made it possible to realize two dimensional gases of relativistic fermions with unprecedented transport properties in condensed matter. Their photoconductive control with ultrafast light pulses is opening new perspectives for the transmission of current and information. Here we show that the interplay of surface and bulk transient carrier dynamics in a photoexcited topological insulator can control an essential parameter for photoconductivity - the balance between excess electrons and holes in the Dirac cone. This can result in a strongly out of equilibrium gas of hot relativistic fermions, characterized by a surprisingly long lifetime of more than 50 ps, and a simultaneous transient shift of chemical potential by as much as 100 meV. The unique properties of this transient Dirac cone make it possible to tune with ultrafast light pulses a relativistic nanoscale Schottky barrier, in a way that is impossible with conventional optoelectronic materials.

preprint2013arXiv

Ultrafast filling of an electronic pseudogap in an incommensurate crystal

We investigate the quasiperiodic crystal (LaS)1.196(VS2) by angle and time resolved photoemission spectroscopy. The dispersion of electronic states is in qualitative agreement with band structure calculated for the VS2 slab without the incommensurate distortion. Nonetheless, the spectra display a temperature dependent pseudogap instead of quasiparticles crossing. The sudden photoexcitation at 50 K induces a partial filling of the electronic pseudogap within less than 80 fs. The electronic energy flows into the lattice modes on a comparable timescale. We attribute this surprisingly short timescale to a very strong electron-phonon coupling to the incommensurate distortion. This result sheds light on the electronic localization arising in aperiodic structures and quasicrystals.

preprint2012arXiv

Ultrafast surface carrier dynamics in the topological insulator Bi2Te3

We discuss the ultrafast evolution of the surface electronic structure of the topological insulator Bi$_2$Te$_3$ following a femtosecond laser excitation. Using time and angle resolved photoelectron spectroscopy, we provide a direct real-time visualisation of the transient carrier population of both the surface states and the bulk conduction band. We find that the thermalization of the surface states is initially determined by interband scattering from the bulk conduction band, lasting for about 0.5 ps; subsequently, few ps are necessary for the Dirac cone non-equilibrium electrons to recover a Fermi-Dirac distribution, while their relaxation extends over more than 10 ps. The surface sensitivity of our measurements makes it possible to estimate the range of the bulk-surface interband scattering channel, indicating that the process is effective over a distance of 5 nm or less. This establishes a correlation between the nanoscale thickness of the bulk charge reservoir and the evolution of the ultrafast carrier dynamics in the surface Dirac cone.

preprint2011arXiv

Atomic and itinerant effects at the transition metal x-ray absorption K-pre-edge exemplified in the case of V$_2$O$_3$

X-ray absorption spectroscopy is a well established tool for obtaining information about orbital and spin degrees of freedom in transition metal- and rare earth-compounds. For this purpose usually the dipole transitions of the L- (2p to 3d) and M- (3d to 4f) edges are employed, whereas higher order transitions such as quadrupolar 1s to 3d in the K-edge are rarely studied in that respect. This is due to the fact that usually such quadrupolar transitions are overshadowed by dipole allowed 1s to 4p transitions and, hence, are visible only as minor features in the pre-edge region. Nonetheless, these features carry a lot of valuable information, similar to the dipole L-edge transition, which is not accessible in experiments under pressure due to the absorption of the diamond anvil pressurecell. We recently performed a theoretical and experimental analysis of such a situation for the metal insulator transition of (V(1-x)Crx)2O3. Since the importance of the orbital degrees of freedom in this transition is widely accepted, a thorough understanding of quadrupole transitions of the vanadium K-pre-edge provides crucial information about the underlying physics. Moreover, the lack of inversion symetry at the vanadium site leads to onsite mixing of vanadium 3d- and 4p- states and related quantum mechanical interferences between dipole and quadrupole transitions. Here we present a theoretical analysis of experimental high resolution x-ray absorption spectroscopy at the V pre-K edge measured in partial fluorescence yield mode for single crystals. We carried out density functional as well as configuration interaction calculations in order to capture effects coming from both, itinerant and atomic limits.

preprint2011arXiv

Coherent Phonon Coupling to Individual Bloch States in Photoexcited Bismuth

We investigate the temporal evolution of the electronic states at the bismuth (111) surface by means of time and angle resolved photoelectron spectroscopy. The binding energy of bulk-like bands oscillates with the frequency of the $A_{1g}$ phonon mode whereas surface states are insensitive to the coherent displacement of the lattice. A strong dependence of the oscillation amplitude on the electronic wavevector is correctly reproduced by \textit{ab initio} calculations of electron-phonon coupling. Besides these oscillations, all the electronic states also display a photoinduced shift towards higher binding energy whose dynamics follows the evolution of the electronic temperature.

preprint2011arXiv

Evolution of the electronic structure of a Mott system across its phase diagram: an X-ray absorption spectroscopy study of (V(1-x)Crx)2O3

V2O3 is an archetypal system for the study of correlation induced, Mott-Hubbard metal-insulator transitions. Despite decades of extensive investigations, the accurate description of its electronic properties remains an open problem in the physics of strongly correlated materials, also because of the lack of detailed experimental data on its electronic structure over the whole phase diagram. We present here a high resolution X-ray absorption spectroscopy study at the V K-edge of (V(1-x)Crx)2O3 to probe its electronic structure as a function of temperature, doping and pressure, providing an accurate picture of the electronic changes over the whole phase diagram. We also discuss the relevance of the parallel evolution of the lattice parameters, determined with X-ray diffraction. This allows us to draw two conclusions of general interest: first, the transition under pressure presents peculiar properties, related to a more continuous evolution of the lattice and electronic structure; second, the lattice mismatch is a good parameter describing the strength of the first order transition, and is consequently related to the tendency of the system towards the coexistence of different phases. Our results show that the evolution of the electronic structure while approaching a phase transition, and not only while crossing it, is also a key element to unveil the underlying physical mechanisms of Mott materials .

preprint2010arXiv

A Microscopic View on the Mott transition in Chromium-doped V2O3

V2O3 is the prototype system for the Mott transition, one of the most fundamental phenomena of electronic correlation. Temperature, doping or pressure induce a metal to insulator transition (MIT) between a paramagnetic metal (PM) and a paramagnetic insulator (PI). This or related MITs have a high technological potential, among others for intelligent windows and field effect transistors. However the spatial scale on which such transitions develop is not known in spite of their importance for research and applications. Here we unveil for the first time the MIT in Cr-doped V2O3 with submicron lateral resolution: with decreasing temperature, microscopic domains become metallic and coexist with an insulating background. This explains why the associated PM phase is actually a poor metal. The phase separation can be associated with a thermodynamic instability near the transition. This instability is reduced by pressure which drives a genuine Mott transition to an eventually homogeneous metallic state.

preprint2010arXiv

Inequivalent routes across the Mott transition in V2O3 explored by X-ray absorption

The changes in the electronic structure of V2O3 across the metal-insulator transition induced by temperature, doping and pressure are identified using high resolution x-ray absorption spectroscopy at the V pre K-edge. Contrary to what has been taken for granted so far, the metallic phase reached under pressure is shown to differ from the one obtained by changing doping or temperature. Using a novel computational scheme, we relate this effect to the role and occupancy of the a1g orbitals. This finding unveils the inequivalence of different routes across the Mott transition in V2O3

preprint2010arXiv

Mott transition in Cr-doped V2O3 studied by ultrafast reflectivity: electron correlation effects on the transient response

The ultrafast response of the prototype Mott-Hubbard system (V1-xCrx)2O3 was systematically studied with fs pump-probe reflectivity, allowing us to clearly identify the effects of the metal-insulator transition on the transient response. The isostructural nature of the phase transition in this material made it possible to follow across the phase diagram the behaviour of the detected coherent acoustic wave, whose average value and lifetime depend on the thermodynamic phase and on the correlated electron density of states. It is also shown how coherent lattice oscillations can play an important role in some changes affecting the ultrafast electronic peak relaxation at the phase transition, changes which should not be mistakenly attributed to genuine electronic effects. These results clearly show that a thorough understanding of the ultrafast response of the material over several tenths of ps is necessary to correctly interpret its sub-ps excitation and relaxation regime, and appear to be of general interest also for other strongly correlated materials.

preprint2010arXiv

Significant reduction of electronic correlations upon isovalent Ru substitution of BaFe2As2

We present a detailed investigation of Ba(Fe0.65Ru0.35)2As2 by transport measurements and Angle Resolved photoemission spectroscopy. We observe that Fe and Ru orbitals hybridize to form a coherent electronic structure and that Ru does not induce doping. The number of holes and electrons, deduced from the area of the Fermi Surface pockets, are both about twice larger than in BaFe2As2. The contribution of both carriers to the transport is evidenced by a change of sign of the Hall coefficient with decreasing temperature. Fermi velocities increase significantly with respect to BaFe2As2, suggesting a significant reduction of correlation effects. This may be a key to understand the appearance of superconductivity at the expense of magnetism in undoped iron pnictides.

preprint2010arXiv

Ultrafast transient response and electron-phonon coupling in the iron-pnictide superconductor Ba(Fe(1-x)Co(x))2As2

The transient response of Ba(Fe(1-x)Co(x))2As2, x=0.08 was studied by pump-probe optical reflectivity. After ultrafast photoexcitation, hot electrons were found to relax with two different characteristic times, indicating the presence of two distinct decay channels: a faster one, of less than 1 ps in the considered pump fluence range, and a slower one, corresponding to lattice thermalization and lasting ~6 ps. Our analysis indicates that the fast relaxation should be attributed to preferential scattering of the electrons with only a subset of the lattice vibration modes, with a second moment of the Eliashberg function lambda(omega^2)~64 meV^2. The simultaneous excitation of a strong fully symmetric A(1g) optical phonon corroborates this conclusion and makes it possible to deduce the value of lambda~0.12. This small value for the electron-phonon coupling confirms that a phonon mediated process cannot be the only mechanism leading to the formation of superconducting pairs in this family of pnictides.

preprint2009arXiv

Nesting between hole and electron pockets in Ba(Fe1-xCox)2As2 (x=0-0.3) observed with angle-resolved photoemission

We present a comprehensive angle-resolved photoemission study of the three-dimensional electronic structure of Ba(Fe1-xCox)2As2. The wide range of dopings covered by this study, x=0 to x=0.3, allows to extract systematic features of the electronic structure. We show that there are three different hole pockets around the G point, the two inner ones being nearly degenerate and rather two dimensional, the outer one presenting a strong three dimensional character. The structure of the electron pockets is clarified by studying high doping contents, where they are enlarged. They are found to be essentially circular and two dimensional. From the size of the pockets, we deduce the number of holes and electrons present at the various dopings. We find that the net number of carriers is in good agreement with the bulk stoichiometry, but that the number of each species (holes and electrons) is smaller than predicted by theory. Finally, we discuss the quality of nesting in the different regions of the phase diagram. The presence of the third hole pocket significantly weakens the nesting at x=0, so that it may not be a crucial ingredient in the formation of the Spin Density Wave. On the other hand, superconductivity seems to be favored by the coexistence of two-dimensional hole and electron pockets of similar sizes.

preprint2009arXiv

Valence band electronic structure of V2O3: identification of V and O bands

We present a comprehensive study of the photon energy dependence of the valence band photoemission yield in the prototype Mott-Hubbard oxide V2O3. The analysis of our experimental results, covering an extended photon energy range (20-6000 eV) and combined with GW calculations, allow us to identify the nature of the orbitals contributing to the total spectral weight at different binding energies, and in particular to locate the V 4s at about 8 eV binding energy. From this comparative analysis we can conclude that the intensity of the quasiparticle photoemission peak, observed close to the Fermi level in the paramagnetic metallic phase upon increasing photon energy, does not have a significant correlation with the intensity variation of the O 2p and V 3d yield, thus confirming that bulk sensitivity is an essential requirement for the detection of this coherent low energy excitation.