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A. Taleb-Ibrahimi

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Published work

33 published item(s)

preprint2022arXiv

CDW signatures in the electronic structure of LaSb2 at 13 K and metal-insulator transition

Light rare-earth antimonide LaSb2 is a material susceptible to nesting and exhibits a Charge Density Wave (CDW) at 355 K as well as superconductivity below 1.2 K. In the seek for additional CDW transitions, we have studied the temperature-dependent of LaSb2 at 200 and 13 K and infer CDW manifestations by combining angle-resolved photoemission spectroscopy (ARPES) measurements and density functional theory (DFT) calculations. ARPES measurements at 200 K show a metallic system while it appears to be semiconducting at 13 K, at odds with existing resistivity measurements. At 13 K, ARPES shows the band folding of the inner Fermi surface pockets, with considerable spectral weight on the folded band. We find a nesting vector at q = 0.25$\pm$0.02 Å -1. In addition, we observe Umklapps of other bands due to the onset of the new periodicity, together with a semiconducting behavior in the whole reciprocal space. Calculations demonstrate that the folded band is associated with the La-Sb layer and that in-plane distortion is the most probable structural modification in the system, probably affecting the whole unit cell.

preprint2022arXiv

Dichroism in time-resolved ARPES and valence band orbital nature in BaNiS2

Time-resolved ARPES gives access to the band structure and ultrafast dynamics of excited electronic states in solids. The orbital character of the bands close to the Fermi level is essential to understand the origin of several exotic phenomena in quantum materials. By performing polarization dependent time- and angle-resolved photoemission spectroscopy and by analyzing the chirality of the photoelectron yield for two different crystal orientations, we identify the orbital character of bands below and above the chemical potential for the Dirac semimetal BaNiS2. Our results illustrate how the control and understanding of matrix elements effects in time-resolved photoemission spectroscopy can be a powerful tool for the study of quantum materials.

preprint2016arXiv

Deviation from Fermi-liquid behavior in two-dimensional surface states of Au-induced nanowires on Ge(001) by correlation and localization

The electronic states of Au-induced atomic nanowires on Ge(001) (Au/Ge(001) NWs) have been investigated by angle-resolved photoelectron spectroscopy with linearly polarized light. We have found three electron pockets around $\bar{J}\bar{K}$, where the Fermi surfaces are closed in a surface Brillouin zone, indicating that the surface states of Au/Ge(001) NWs are two-dimensional whereas the atomic structure is one-dimensional. The two-dimensional metallic states exhibit remarkable suppression of the photoelectron intensity near a Fermi energy. This suppression can be explained by the correlation and localization effects in disordered metals, which is a deviation from a Fermi-liquid model.

preprint2016arXiv

Time resolved photoemission of Sr$_2$IrO$_4$

We investigate the temporal evolution of electronic states in strontium iridate Sr$_2$IrO$_4$. The time resolved photoemission spectra of intrinsic, electron doped and the hole doped samples are monitored in identical experimental conditions. Our data on intrinsic and electron doped samples, show that primary doublon-holon pairs relax near to the chemical potential on a timescale shorter than $70$ fs. The subsequent cooling of low energy excitations takes place in two step: a rapid dynamics of $\cong120$ fs is followed by a slower decay of $\cong 1$ ps. The reported timescales endorse the analogies between Sr$_2$IrO$_4$ and copper oxides.

preprint2015arXiv

Giant Anisotropy of Spin-Orbit Splitting at the Bismuth Surface

We investigate the bismuth (111) surface by means of time and angle resolved photoelectron spectroscopy. The parallel detection of the surface states below and above the Fermi level reveals a giant anisotropy of the Spin-Orbit (SO) spitting. These strong deviations from the Rashba-like coupling cannot be treated in $\textbf{k}\cdot \textbf{p}$ perturbation theory. Instead, first principle calculations could accurately reproduce the experimental dispersion of the electronic states. Our analysis shows that the giant anisotropy of the SO splitting is due to a large out-of plane buckling of the spin and orbital texture.

preprint2015arXiv

Quasiparticles dynamics in high-temperature superconductors far from equilibrium: an indication of pairing amplitude without phase coherence

We perform time resolved photoelectron spectroscopy measurements of optimally doped $\tn{Bi}_2\tn{Sr}_2\tn{CaCu}_2\tn{O}_{8+δ}$ (Bi-2212) and $\tn{Bi}_2\tn{Sr}_{2-x}\tn{La}_{x}\tn{Cu}\tn{O}_{6+δ}$ (Bi-2201). The electrons dynamics show that inelastic scattering by nodal quasiparticles decreases when the temperature is lowered below the critical value of the superconducting phase transition. This drop of electronic dissipation is astonishingly robust and survives to photoexcitation densities much larger than the value sustained by long-range superconductivity. The unconventional behaviour of quasiparticle scattering is ascribed to superconducting correlations extending on a length scale comparable to the inelastic path. Our measurements indicate that strongly driven superconductors enter in a regime without phase coherence but finite pairing amplitude. The latter vanishes near to the critical temperature and has no evident link with the pseudogap observed by Angle Resolved Photoelectron Spectroscopy (ARPES).

preprint2015arXiv

Semiconducting graphene from highly ordered substrate interactions

While numerous methods have been proposed to produce semiconducting graphene, a significant bandgap has never been demonstrated. The reason is that, regardless of the theoretical gap formation mechanism, disorder at the sub-nanometer scale prevents the required chiral symmetry breaking necessary to open a bandgap in graphene. In this work, we show for the first time that a 2D semiconducting graphene film can be made by epitaxial growth. Using improved growth methods, we show by direct band measurements that a bandgap greater than 0.5 eV can be produced in the first graphene layer grown on the SiC(0001) surface. This work demonstrates that order, a property that remains lacking in other graphene systems, is key to producing electronically viable semiconducting graphene.

preprint2015arXiv

Spin-pumping into surface states of topological insulator α-Sn, spin to charge conversion at room temperature

We present experimental results on the conversion of a spin current into a charge current by spin pumping into the Dirac cone with helical spin polarization of the elemental topological insulator (TI) α-Sn[1-3]. By angle-resolved photoelectron spectroscopy (ARPES) we first confirm that the Dirac cone at the surface of α-Sn (0 0 1) layers subsists after covering with Ag. Then we show that resonant spin pumping at room temperature from Fe through Ag into α-Sn layers induces a lateral charge current that can be ascribed to the Inverse Edelstein Effect[4-5]. Our observation of an Inverse Edelstein Effect length[5-6] much longer than for Rashba interfaces[5-10] demonstrates the potential of the TI for conversion between spin and charge in spintronic devices. By comparing our results with data on the relaxation time of TI free surface states from time-resolved ARPES, we can anticipate the ultimate potential of TI for spin to charge conversion and the conditions to reach it.

preprint2015arXiv

Topological phase diagram and saddle point singularity in a tunable topological crystalline insulator

We report the evolution of the surface electronic structure and surface material properties of a topological crystalline insulator (TCI) Pb1-xSnxSe as a function of various material parameters including composition x, temperature T and crystal structure. Our spectroscopic data demonstrate the electronic groundstate condition for the saddle point singularity, the tunability of surface chemical potential, and the surface states' response to circularly polarized light. Our results show that each material parameter can tune the system between trivial and topological phase in a distinct way unlike as seen in Bi2Se3 and related compounds, leading to a rich and unique topological phase diagram. Our systematic studies of the TCI Pb1-xSnxSe are valuable materials guide to realize new topological phenomena.

preprint2014arXiv

Efficient, high-density, carbon-based spinterfaces

The research field of spintronics has sought, over the past 25 years and through several materials science tracks, a source of highly spin-polarized current at room temperature. Organic spinterfaces, which consist in an interface between a ferromagnetic metal and a molecule, represent the most promising track as demonstrated for a handful of interface candidates. How general is this effect? We deploy topographical and spectroscopic techniques to show that a strongly spin-polarized interface arises already between ferromagnetic cobalt and mere carbon atoms. Scanning tunneling microscopy and spectroscopy show how a dense semiconducting carbon film with a low band gap of about 0.4 eV is formed atop the metallic interface. Spin-resolved photoemission spectroscopy reveals a high degree of spin polarization at room temperature of carbon-induced interface states at the Fermi energy. From both our previous study of cobalt/phthalocyanine spinterfaces and present x-ray photoemission spectroscopy studies of the cobalt/carbon interface, we infer that these highly spin-polarized interface states arise mainly from sp2-bonded carbon atoms. We thus demonstrate the molecule-agnostic, generic nature of the spinterface formation.

preprint2014arXiv

Saddle point singularity and topological phase diagram in a tunable topological crystalline insulator (TCI)

A topological crystalline insulator (TCI) is a new phase of topological matter, which is predicted to exhibit distinct topological quantum phenomena, since space group symmetries replace the role of time-reversal symmetry in the much-studied Z$_2$ topological insulators. Utilizing high-resolution angle-resolved photoemission spectroscopy (ARPES), we reveal the momentum space nature of interconnectivity of the Fermi surface pockets leading to a saddle point singularity within the topological surface state alone in the TCI Pb$_{0.7}$Sn$_{0.3}$Se. Moreover, we show that the measured momentum-integrated density of states exhibits pronounced peaks at the saddle point energies, demonstrating the van Hove singularities (VHSs) in the topological surface states, whose surface chemical potential, as we show, can be tuned via surface chemical gating, providing access to the topological correlated physics on the surface. Our experimental data reveal a delicate relationship among lattice constant, band gap and spin-orbit coupling strength associated with the topological phase transition in Pb$_{1-x}$Sn$_{x}$Se. Furthermore, we explore the robustness of the TCI phase with VHS in Pb$_{1-x}$Sn$_{x}$Se, which shows a variety of distinct topological phase transitions driven by either thermal instability or broken crystalline symmetry, and thus revealing a rich topological phase diagram connectivity in Pb$_{1-x}$Sn$_{x}$Se for the first time.

preprint2013arXiv

Large temperature dependence of the number of carriers in Co-doped BaFe2As2

Using angle-resolved photoemission spectroscopy, we study the evolution of the number of carriers in Ba(Fe(1-x)Cox)2As2 as a function of Co content and temperature. We show that there is a k-dependent energy shift compared to density functional calculations, which is large at low Co contents and low temperatures and reduces the volume of hole and electron pockets by a factor 2. This k-shift becomes negligible at high Co content and could be due to interband charge or spin fluctuations. We further reveal that the bands shift with temperature, changing significantly the number of carriers they contain (up to 50%). We explain this evolution by thermal excitations of carriers among the narrow bands, possibly combined with a temperature evolution of the k-dependent fluctuations.

preprint2013arXiv

Nature of the bad metallic behavior of Fe_{1.06}Te inferred from its evolution in the magnetic state

We investigate with angle resolved photoelectron spectroscopy the change of the Fermi Surface (FS) and the main bands from the paramagnetic (PM) state to the antiferromagnetic (AFM) occurring below 72 K in Fe_{1.06}Te. The evolution is completely different from that observed in iron-pnictides as nesting is absent. The AFM state is a rather good metal, in agreement with our magnetic band structure calculation. On the other hand, the PM state is very anomalous with a large pseudogap on the electron pocket that closes in the AFM state. We discuss this behavior in connection with spin fluctuations existing above the magnetic transition and the correlations predicted in the spin-freezing regime of the incoherent metallic state.

preprint2013arXiv

Tuning a Schottky barrier in a photoexcited topological insulator with transient Dirac cone electron-hole asymmetry

The advent of Dirac materials has made it possible to realize two dimensional gases of relativistic fermions with unprecedented transport properties in condensed matter. Their photoconductive control with ultrafast light pulses is opening new perspectives for the transmission of current and information. Here we show that the interplay of surface and bulk transient carrier dynamics in a photoexcited topological insulator can control an essential parameter for photoconductivity - the balance between excess electrons and holes in the Dirac cone. This can result in a strongly out of equilibrium gas of hot relativistic fermions, characterized by a surprisingly long lifetime of more than 50 ps, and a simultaneous transient shift of chemical potential by as much as 100 meV. The unique properties of this transient Dirac cone make it possible to tune with ultrafast light pulses a relativistic nanoscale Schottky barrier, in a way that is impossible with conventional optoelectronic materials.

preprint2013arXiv

Ultrafast filling of an electronic pseudogap in an incommensurate crystal

We investigate the quasiperiodic crystal (LaS)1.196(VS2) by angle and time resolved photoemission spectroscopy. The dispersion of electronic states is in qualitative agreement with band structure calculated for the VS2 slab without the incommensurate distortion. Nonetheless, the spectra display a temperature dependent pseudogap instead of quasiparticles crossing. The sudden photoexcitation at 50 K induces a partial filling of the electronic pseudogap within less than 80 fs. The electronic energy flows into the lattice modes on a comparable timescale. We attribute this surprisingly short timescale to a very strong electron-phonon coupling to the incommensurate distortion. This result sheds light on the electronic localization arising in aperiodic structures and quasicrystals.

preprint2012arXiv

A wide band gap metal-semiconductor-metal nanostructure made entirely from graphene

A blueprint for producing scalable digital graphene electronics has remained elusive. Current methods to produce semiconducting-metallic graphene networks all suffer from either stringent lithographic demands that prevent reproducibility, process-induced disorder in the graphene, or scalability issues. Using angle resolved photoemission, we have discovered a unique one dimensional metallic-semiconducting-metallic junction made entirely from graphene, and produced without chemical functionalization or finite size patterning. The junction is produced by taking advantage of the inherent, atomically ordered, substrate-graphene interaction when it is grown on SiC, in this case when graphene is forced to grow over patterned SiC steps. This scalable bottomup approach allows us to produce a semiconducting graphene strip whose width is precisely defined within a few graphene lattice constants, a level of precision entirely outside modern lithographic limits. The architecture demonstrated in this work is so robust that variations in the average electronic band structure of thousands of these patterned ribbons have little variation over length scales tens of microns long. The semiconducting graphene has a topologically defined few nanometer wide region with an energy gap greater than 0.5 eV in an otherwise continuous metallic graphene sheet. This work demonstrates how the graphene-substrate interaction can be used as a powerful tool to scalably modify graphene's electronic structure and opens a new direction in graphene electronics research.

preprint2012arXiv

Direct observation of a highly spin-polarized organic spinterface at room temperature

The design of large-scale electronic circuits that are entirely spintronics-driven requires a current source that is highly spin-polarised at and beyond room temperature, cheap to build, efficient at the nanoscale and straightforward to integrate with semiconductors. Yet despite research within several subfields spanning nearly two decades, this key building block is still lacking. We experimentally and theoretically show how the interface between Co and phthalocyanine molecules constitutes a promising candidate. Spin-polarised direct and inverse photoemission experiments reveal a high degree of spin polarisation at room temperature at this interface. We measured a magnetic moment on the molecules's nitrogen pi orbitals, which substantiates an ab-initio theoretical description of highly spin-polarised charge conduction across the interface due to differing spinterface formation mechanims in each spin channel. We propose, through this example, a recipe to engineer simple organic-inorganic interfaces with remarkable spintronic properties that can endure well above room temperature.

preprint2012arXiv

High Van Hove singularity extension and Fermi velocity increase in epitaxial graphene functionalized by gold clusters intercalation

Gold intercalation between the buffer layer and a graphene monolayer of epitaxial graphene on SiC(0001) leads to the formation of quasi free standing small aggregates of clusters. Angle Resolved Photoemission Spectroscopy measurements reveal that these clusters preserve the linear dispersion of the graphene quasiparticles and surprisingly increase their Fermi velocity. They also strongly modify the band structure of graphene around the Van Hove singularities (VHs) by a strong extension without charge transfer. This result gives a new insight on the role of the intercalant in the renormalization of the bare electronic band structure of graphene usually observed in Graphite and Graphene Intercalation Compounds.

preprint2012arXiv

Impact of the 2 Fe unit cell on the electronic structure measured by ARPES in iron pnictides

In all iron pnictides, the positions of the ligand alternatively above and below the Fe plane create 2 inequivalent Fe sites. This results in 10 Fe 3d bands in the electronic structure. However, they do not all have the same status for an ARPES experiment. There are interference effects between the 2 Fe that modulate strongly the intensity of the bands and that can even switch their parity. We give a simple description of these effects, notably showing that ARPES polarization selection rules in these systems cannot be applied by reference to a single Fe ion. We show that ARPES data for the electron pockets in Ba(Fe0.92Co0.08)2As2 are in excellent agreement with this model. We observe both the total suppression of some bands and the parity switching of some other bands. Once these effects are properly taken into account, the structure of the electron pockets, as measured by ARPES, becomes very clear and simple. By combining ARPES measurements in different experimental configurations, we clearly isolate each band forming one of the electron pockets. We identify a deep electron band along one ellipse axis with the dxy orbital and a shallow electron band along the perpendicular axis with the dxz/dyz orbitals, in good agreement with band structure calculations. We show that the electron pockets are warped as a function of kz as expected theoretically, but that they are much smaller than predicted by the calculation.

preprint2012arXiv

Measuring Fermi velocities with ARPES in narrow band systems. The case of layered cobaltates

ARPES is a priori a technique of choice to measure the Fermi velocities vF in metals. In correlated systems, it is interesting to compare this experimental value to that obtained in band structure calculations, as deviations are usually taken as a good indicator of the presence of strong electronic correlations. Nevertheless, it is not always straightforward to extract vF from ARPES spectra. We study here the case of layered cobaltates, an interesting family of correlated metals. We compare the results obtained by standard methods, namely the fit of spectra at constant momentum k (energy distribution curve, EDC) or constant binding energy omega(momentum distribution curve, MDC). We find that the difference of vF between the two methods can be as large as a factor 2. The reliability of the 2 methods is intimately linked to the degree of k- and omega-dependence of the electronic self-energy. As the k-dependence is usually much smaller than the omega dependence for a correlated system, the MDC analysis is generally expected to give more reliable results. However, we review here several examples within cobaltates, where the MDC analysis apparently leads to unphysical results, while the EDC analysis appears coherent. We attribute the difference between the EDC and MDC analysis to a strong variation of the photoemission intensity with the momentum k. This distorts the MDC lineshapes but does not affect the EDC ones. Simulations including a k dependence of the intensity allow to reproduce the difference between MDC and EDC analysis very well. This momentum dependence could be of extrinsic or intrinsic. We argue that the latter is the most likely and actually contains valuable information on the nature of the correlations that would be interesting to extract further.

preprint2012arXiv

Orbitally resolved lifetimes in Ba(Fe0.92Co0.08)2As2 measured by ARPES

Despite many ARPES investigations of iron pnictides, the structure of the electron pockets is still poorly understood. By combining ARPES measurements in different experimental configurations, we clearly resolve their elliptic shape. Comparison with band calculation identify a deep electron band with the dxy orbital and a shallow electron band along the perpendicular ellipse axis with the dxz/dyz orbitals. We find that, for both electron and hole bands, the lifetimes associated with dxy are longer than for dxz/dyz. This suggests that the two types of orbitals play different roles in the electronic properties and that their relative weight is a key parameter to determine the ground state.

preprint2012arXiv

Ultrafast surface carrier dynamics in the topological insulator Bi2Te3

We discuss the ultrafast evolution of the surface electronic structure of the topological insulator Bi$_2$Te$_3$ following a femtosecond laser excitation. Using time and angle resolved photoelectron spectroscopy, we provide a direct real-time visualisation of the transient carrier population of both the surface states and the bulk conduction band. We find that the thermalization of the surface states is initially determined by interband scattering from the bulk conduction band, lasting for about 0.5 ps; subsequently, few ps are necessary for the Dirac cone non-equilibrium electrons to recover a Fermi-Dirac distribution, while their relaxation extends over more than 10 ps. The surface sensitivity of our measurements makes it possible to estimate the range of the bulk-surface interband scattering channel, indicating that the process is effective over a distance of 5 nm or less. This establishes a correlation between the nanoscale thickness of the bulk charge reservoir and the evolution of the ultrafast carrier dynamics in the surface Dirac cone.

preprint2011arXiv

Angle-resolved photoemission study of the role of nesting and orbital orderings in the antiferromagnetic phase of BaFe2As2

We present a detailed comparison of the electronic structure of BaFe2As2 in its paramagnetic and antiferromagnetic (AFM) phases, through angle-resolved photoemission studies. Using different experimental geometries, we resolve the full elliptic shape of the electron pockets, including parts of dxy symmetry along its major axis that are usually missing. This allows us to define precisely how the hole and electron pockets are nested and how the different orbitals evolve at the transition. We conclude that the imperfect nesting between hole and electron pockets explains rather well the formation of gaps and residual metallic droplets in the AFM phase, provided the relative parity of the different bands is taken into account. Beyond this nesting picture, we observe shifts and splittings of numerous bands at the transition. We show that the splittings are surface sensitive and probably not a reliable signature of the magnetic order. On the other hand, the shifts indicate a significant redistribution of the orbital occupations at the transition, especially within the dxz/dyz system, which we discuss.

preprint2011arXiv

Coherent Phonon Coupling to Individual Bloch States in Photoexcited Bismuth

We investigate the temporal evolution of the electronic states at the bismuth (111) surface by means of time and angle resolved photoelectron spectroscopy. The binding energy of bulk-like bands oscillates with the frequency of the $A_{1g}$ phonon mode whereas surface states are insensitive to the coherent displacement of the lattice. A strong dependence of the oscillation amplitude on the electronic wavevector is correctly reproduced by \textit{ab initio} calculations of electron-phonon coupling. Besides these oscillations, all the electronic states also display a photoinduced shift towards higher binding energy whose dynamics follows the evolution of the electronic temperature.

preprint2011arXiv

Silicon intercalation into the graphene-SiC interface

In this work we use LEEM, XPEEM and XPS to study how the excess Si at the graphene-vacuum interface reorders itself at high temperatures. We show that silicon deposited at room temperature onto multilayer graphene films grown on the SiC(000[`1]) rapidly diffuses to the graphene-SiC interface when heated to temperatures above 1020. In a sequence of depositions, we have been able to intercalate ~ 6 ML of Si into the graphene-SiC interface.

preprint2010arXiv

Experimental study of the incoherent spectral weight in the photoemission spectra of the misfit cobaltate [Bi2Ba2O4][CoO2]2

Previous ARPES experiments in NaxCoO2 reported both a strongly renormalized bandwidth near the Fermi level and moderately renormalized Fermi velocities, leaving it unclear whether the correlations are weak or strong and how they could be quantified. We explain why this situation occurs and solve the problem by extracting clearly the coherent and incoherent parts of the band crossing the Fermi level. We show that one can use their relative weight to estimate self-consistently the quasiparticle weight Z, which turns out to be very small Z=0.15 +/- 0.05. We suggest this method could be a reliable way to study the evolution of correlations in cobaltates and for comparison with other strongly correlated systems.

preprint2010arXiv

New electronic orderings observed in cobaltates under the influence of misfit periodicities

We study with ARPES the electronic structure of CoO2 slabs, stacked with rock-salt (RS) layers exhibiting a different (misfit) periodicity. Fermi Surfaces (FS) in phases with different doping and/or periodicities reveal the influence of the RS potential on the electronic structure. We show that these RS potentials are well ordered, even in incommensurate phases, where STM images reveal broad stripes with width as large as 80Å. The anomalous evolution of the FS area at low dopings is consistent with the localization of a fraction of the electrons. We propose that this is a new form of electronic ordering, induced by the potential of the stacked layers (RS or Na in NaxCoO2) when the FS becomes smaller than the Brillouin Zone of the stacked structure.

preprint2010arXiv

Significant reduction of electronic correlations upon isovalent Ru substitution of BaFe2As2

We present a detailed investigation of Ba(Fe0.65Ru0.35)2As2 by transport measurements and Angle Resolved photoemission spectroscopy. We observe that Fe and Ru orbitals hybridize to form a coherent electronic structure and that Ru does not induce doping. The number of holes and electrons, deduced from the area of the Fermi Surface pockets, are both about twice larger than in BaFe2As2. The contribution of both carriers to the transport is evidenced by a change of sign of the Hall coefficient with decreasing temperature. Fermi velocities increase significantly with respect to BaFe2As2, suggesting a significant reduction of correlation effects. This may be a key to understand the appearance of superconductivity at the expense of magnetism in undoped iron pnictides.

preprint2010arXiv

Structure and electronic properties of epitaxial graphene grown on SiC

We review progress in developing epitaxial graphene as a material for carbon electronics. In particular, improvements in epitaxial graphene growth, interface control and the understanding of multilayer epitaxial graphene's electronic properties are discussed. Although graphene grown on both polar faces of SiC is addressed, our discussions will focus on graphene grown on the (000-1) C-face of SiC. The unique properties of C-face multilayer epitaxial graphene have become apparent. These films behave electronically like a stack of nearly independent graphene sheets rather than a thin Bernal-stacked graphite sample. The origin of multilayer graphene's electronic behavior is its unique highly-ordered stacking of non-Bernal rotated graphene planes. While these rotations do not significantly affect the inter-layer interactions, they do break the stacking symmetry of graphite. It is this broken symmetry that causes each sheet to behave like an isolated graphene plane.

preprint2010arXiv

Symmetry breaking in commensurate graphene rotational stacking; a comparison of theory and experiment

Graphene stacked in a Bernal configuration (60 degrees relative rotations between sheets) differs electronically from isolated graphene due to the broken symmetry introduced by interlayer bonds forming between only one of the two graphene unit cell atoms. A variety of experiments have shown that non-Bernal rotations restore this broken symmetry; consequently, these stacking varieties have been the subject of intensive theoretical interest. Most theories predict substantial changes in the band structure ranging from the development of a Van Hove singularity and an angle dependent electron localization that causes the Fermi velocity to go to zero as the relative rotation angle between sheets goes to zero. In this work we show by direct measurement that non-Bernal rotations preserve the graphene symmetry with only a small perturbation due to weak effective interlayer coupling. We detect neither a Van Hove singularity nor any significant change in the Fermi velocity. These results suggest significant problems in our current theoretical understanding of the origins of the band structure of this material.

preprint2010arXiv

Unveiling a two-dimensional electron gas with universal subbands at the surface of SrTiO3

Similar to silicon that is the basis of conventional electronics, strontium titanate (SrTiO3) is the bedrock of the emerging field of oxide electronics. SrTiO3 is the preferred template to create exotic two-dimensional (2D) phases of electron matter at oxide interfaces, exhibiting metal-insulator transitions, superconductivity, or large negative magnetoresistance. However, the physical nature of the electronic structure underlying these 2D electron gases (2DEGs) remains elusive, although its determination is crucial to understand their remarkable properties. Here we show, using angle-resolved photoemission spectroscopy (ARPES), that there is a highly metallic universal 2DEG at the vacuum-cleaved surface of SrTiO3, independent of bulk carrier densities over more than seven decades, including the undoped insulating material. This 2DEG is confined within a region of ~5 unit cells with a sheet carrier density of ~0.35 electrons per a^2 (a is the cubic lattice parameter). We unveil a remarkable electronic structure consisting on multiple subbands of heavy and light electrons. The similarity of this 2DEG with those reported in SrTiO3-based heterostructures and field-effect transistors suggests that different forms of electron confinement at the surface of SrTiO3 lead to essentially the same 2DEG. Our discovery provides a model system for the study of the electronic structure of 2DEGs in SrTiO3-based devices, and a novel route to generate 2DEGs at surfaces of transition-metal oxides.

preprint2009arXiv

First direct observation of a nearly ideal graphene band structure

Angle-resolved photoemission and X-ray diffraction experiments show that multilayer epitaxial graphene grown on the SiC(000-1) surface is a new form of carbon that is composed of effectively isolated graphene sheets. The unique rotational stacking of these films cause adjacent graphene layers to electronically decouple leading to a set of nearly independent linearly dispersing bands (Dirac cones) at the graphene K-point. Each cone corresponds to an individual macro-scale graphene sheet in a multilayer stack where AB-stacked sheets can be considered as low density faults.

preprint2009arXiv

Nesting between hole and electron pockets in Ba(Fe1-xCox)2As2 (x=0-0.3) observed with angle-resolved photoemission

We present a comprehensive angle-resolved photoemission study of the three-dimensional electronic structure of Ba(Fe1-xCox)2As2. The wide range of dopings covered by this study, x=0 to x=0.3, allows to extract systematic features of the electronic structure. We show that there are three different hole pockets around the G point, the two inner ones being nearly degenerate and rather two dimensional, the outer one presenting a strong three dimensional character. The structure of the electron pockets is clarified by studying high doping contents, where they are enlarged. They are found to be essentially circular and two dimensional. From the size of the pockets, we deduce the number of holes and electrons present at the various dopings. We find that the net number of carriers is in good agreement with the bulk stoichiometry, but that the number of each species (holes and electrons) is smaller than predicted by theory. Finally, we discuss the quality of nesting in the different regions of the phase diagram. The presence of the third hole pocket significantly weakens the nesting at x=0, so that it may not be a crucial ingredient in the formation of the Spin Density Wave. On the other hand, superconductivity seems to be favored by the coexistence of two-dimensional hole and electron pockets of similar sizes.