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Researcher profile

M. L. Savchenko

M. L. Savchenko contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

3 published item(s)

preprint2022arXiv

Scattering anisotropy in HgTe (013) quantum well

We report on a detailed experimental study of the electron transport anisotropy in HgTe (013) quantum well of 22 nm width in the directions $[100]$ and $[03\bar{1}]$ as the function of the electron density $n$. The anisotropy is absent at minimal electron density near the charge neutrality point. The anisotropy increases with the increase of n and reaches about 10% when the Fermi level is within the first subband H1. There is a sharp increase of the anisotropy (up to 60%) when the Fermi level reaches the second subband E2. We conclude that the first effect is due to the small intra-subband anisotropic interface roughness scattering, and the second one is due to the strongly anisotropic inter-subband roughness scattering, but the microscopical reason of such a strong change in the anisotropy remains unknown.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Observation of High Harmonics of the Cyclotron Resonance in Microwave Transmission of a High-Mobility Two-Dimensional Electron System

We report an observation of magnetooscillations of the microwave power transmitted through the high mobility two-dimensional electron system hosted by a GaAs quantum well. The oscillations reflect an enhanced absorption of radiation at high harmonics of the cyclotron resonance and follow simultaneously measured microwave-induced resistance oscillations (MIRO) in the dc transport. While the relative amplitude (up to 1%) of the transmittance oscillations appears to be small, they represent a significant (>50%) modulation of the absorption coefficient. The analysis of obtained results demonstrates that the low-B decay, magnitude, and polarization dependence of the transmittance oscillations accurately follow the theory describing photon-assisted scattering between distant disorder-broadened Landau levels. The extracted sample parameters reasonably well describe the concurrently measured MIRO. Our results provide an insight into the MIRO polarization immunity problem and pave the way to probe diverse high-frequency transport properties of high-mobility systems using precise transmission measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Weak antilocalization in partially relaxed 200-nm HgTe films

The anomalous magnetoresistance caused by the weak antilocalization (WAL) effects in 200-nm HgTe films is experimentally studied. The film is a high quality 3D topological insulator with much stronger spatial separation of surface states than in previously studied thinner HgTe structures. However, in contrast to that films, the system under study is characterized by a reduced partial strain resulting in an almost zero bulk energy gap. It has been shown that at all positions of the Fermi level the system exhibits a WAL conductivity correction superimposed on classical parabolic magnetoresistance. Since high mobility of carriers, the analysis of the obtained results was performed using a ballistic WAL theory. The maximum of the WAL conductivity correction amplitude was found at a Fermi level position near the bulk energy gap indicating to full decoupling of the surface carriers in these conditions. The WAL amplitude monotonously decreases when the density of either bulk electrons or holes increases that results from the increasing coupling between surface and bulk carriers.

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