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Researcher profile

M. Kraft

M. Kraft contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.atom-phquant-phmath.PRphysics.optics

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Published work

5 published item(s)

preprint2014arXiv

Two-dimensional ion trap lattice on a microchip

Microfabricated ion traps are a major advancement towards scalable quantum computing with trapped ions. The development of more versatile ion-trap designs, in which tailored arrays of ions are positioned in two dimensions above a microfabricated surface, would lead to applications in fields as varied as quantum simulation, metrology and atom-ion interactions. Current surface ion traps often have low trap depths and high heating rates, due to the size of the voltages that can be applied to them, limiting the fidelity of quantum gates. Here we report on a fabrication process that allows for the application of very high voltages to microfabricated devices in general and use this advance to fabricate a 2D ion trap lattice on a microchip. Our microfabricated architecture allows for reliable trapping of 2D ion lattices, long ion lifetimes, rudimentary shuttling between lattice sites and the ability to deterministically introduce defects into the ion lattice.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

ICP polishing of silicon for high quality optical resonators on a chip

Miniature concave hollows, made by wet etching silicon through a circular mask, can be used as mirror substrates for building optical micro-cavities on a chip. In this paper we investigate how ICP polishing improves both shape and roughness of the mirror substrates. We characterise the evolution of the surfaces during the ICP polishing using white-light optical profilometry and atomic force microscopy. A surface roughness of 1 nm is reached, which reduces to 0.5 nm after coating with a high reflectivity dielectric. With such smooth mirrors, the optical cavity finesse is now limited by the shape of the underlying mirror.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Atom chip for BEC interferometry

We have fabricated and tested an atom chip that operates as a matter wave interferometer. In this communication we describe the fabrication of the chip by ion-beam milling of gold evaporated onto a silicon substrate. We present data on the quality of the wires, on the current density that can be reached in the wires and on the smoothness of the magnetic traps that are formed. We demonstrate the operation of the interferometer, showing that we can coherently split and recombine a Bose-Einstein condensate with good phase stability.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

A Stochastic Algorithm for Parametric Sensitivity in Smoluchowski's Coagulation Equation

In this article a stochastic particle system approximation to the parametric sensitivity in the Smoluchowski coagulation equation is introduced. The parametric sensitivity is the derivative of the solution to the equation with respect to some parameter, where the coagulation kernel depends on this parameter. It is proved that the particle system converges weakly to the sensitivity as the number of particles N increases. A Monte Carlo algorithm is developed and variance reduction techniques are applied. Numerical experiments are conducted for two kernels: the additive kernel and one which has been used for studying soot formation in a free molecular regime. It is shown empirically that the techniques for variance reduction are indeed very effective and that the order of convergence is O(1/N). The algorithm is then compared to an algorithm based on a finite difference approximation to the sensitivity and it is found that the variance of the sensitivity estimators are considerably lower than that for the finite difference approach. Furthermore, two methods of establishing `efficiency' are considered and the new algorithm is found to be significantly more efficient.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

The effect of self-affine fractal roughness of wires on atom chips

Atom chips use current flowing in lithographically patterned wires to produce microscopic magnetic traps for atoms. The density distribution of a trapped cold atom cloud reveals disorder in the trapping potential, which results from meandering current flow in the wire. Roughness in the edges of the wire is usually the main cause of this behaviour. Here, we point out that the edges of microfabricated wires normally exhibit self-affine roughness. We investigate the consequences of this for disorder in atom traps. In particular, we consider how closely the trap can approach the wire when there is a maximum allowable strength of the disorder. We comment on the role of roughness in future atom--surface interaction experiments.

0 citations0 reviewsNo code linkedOpen access