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Z. Moktadir contributes to research discovery and scholarly infrastructure.
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Published work
A novel graphene transistor architecture is reported. The transistor has a U-shape geometry and was fabricated using a gallium focused ion beam (FIB). The channel conductance was tuned with a back gate. The Ion/Ioff ratio exceeded 10^5.
We have fabricated and tested an atom chip that operates as a matter wave interferometer. In this communication we describe the fabrication of the chip by ion-beam milling of gold evaporated onto a silicon substrate. We present data on the quality of the wires, on the current density that can be reached in the wires and on the smoothness of the magnetic traps that are formed. We demonstrate the operation of the interferometer, showing that we can coherently split and recombine a Bose-Einstein condensate with good phase stability.
Atom chips use current flowing in lithographically patterned wires to produce microscopic magnetic traps for atoms. The density distribution of a trapped cold atom cloud reveals disorder in the trapping potential, which results from meandering current flow in the wire. Roughness in the edges of the wire is usually the main cause of this behaviour. Here, we point out that the edges of microfabricated wires normally exhibit self-affine roughness. We investigate the consequences of this for disorder in atom traps. In particular, we consider how closely the trap can approach the wire when there is a maximum allowable strength of the disorder. We comment on the role of roughness in future atom--surface interaction experiments.