Researcher profile

M. Hanawa

M. Hanawa contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

cond-mat.supr-con cond-mat.mtrl-sci cond-mat.str-el

Trust snapshot

Quick read

Trust 19 - Baseline

5works

0followers

3topics

4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2012arXiv

Microscopic analysis of the chemical reaction between Fe(Te,Se) thin films and underlying CaF$_2$

To understand the chemical reaction at the interface of materials, we performed a transmission electron microscopy (TEM) observation in four types of Fe(Te,Se) superconducting thin films prepared on different types of substrates: CaF2 substrate, CaF2 substrate with a CaF2 buffer layer, CaF2 substrate with a FeSe buffer layer, and a LaAlO3 substrate with a CaF2 buffer layer. Based on the energy-dispersive X-ray spectrometer (EDX) analysis, we found possible interdiffusion between fluorine and selenium that has a strong influence on the superconductivity in Fe(Te,Se) films. The chemical interdiffusion also plays a significant role in the variation of the lattice parameters. The lattice parameters of the Fe(Te,Se) thin films are primarily determined by the chemical substitution of anions, and the lattice mismatch only plays a secondary role.

preprint2011arXiv

Epitaxial growth of FeSe$_{0.5}$Te$_{0.5}$ thin films on CaF$_2$ substrates with high critical current density

In-situ epitaxial growth of FeSe$_{0.5}$Te$_{0.5}$ thin films is demonstrated on a non-oxide substrate CaF$_2$. Structural analysis reveals that compressive stress is moderately added to 36-nm thick FeSe$_{0.5}$Te$_{0.5}$, which pushes up the critical temperature above 15 K, showing higher values than that of bulk crystals. Critical current density at $T$ = 4.5 K reaches 5.9 x 10$^4$ Acm$^{-2}$ at $μ_0H$ = 10 T, and 4.2 x 10$^4$ Acm$^{-2}$ at $μ_0H$ = 14 T. These results indicate that fluoride substrates have high potential for the growth of iron-based superconductors in comparison with popular oxide substrates.

preprint2011arXiv

Hall effect of FeTe and Fe(Se_1-x_Te_x_) thin films

The Hall effect is investigated in thin-film samples of iron-chalcogenide superconductors in detail. The Hall coefficient (RH) of FeTe and Fe(Se1-xTex) exhibits a similar positive value around 300 K, indicating that the high-temperature normal state is dominated by hole-channel transport. FeTe exhibits a sign reversal from positive to negative across the transition to the low-temperature antiferromagnetic state, indicating the occurrence of drastic reconstruction in the band structure. The mobility analysis using the carrier density theoretically calculated reveals that the mobility of holes is strongly suppressed to zero, and hence the electric transport looks to be dominated by electrons. The Se substitution to Te suppresses the antiferromagnetic long-range order and induces superconductivity instead. The similar mobility analysis for Fe(Se0.4Te0.6) and Fe(Se0.5Te0.5) thin films shows that the mobility of electrons increases with decreasing temperature even in the paramagnetic state, and keeps sufficiently high values down to the superconducting transition temperature. From the comparison between FeTe and Fe(Se1-xTex), it is suggested that the coexistence of 'itinerant' carriers both in electron and hole channels is indispensable for the occurrence of superconductivity.

preprint2010arXiv

Hall effect in superconducting Fe(Se0.5Te0.5) thin films

The Hall effect is investigated for eight superconducting Fe(Se_0.5_Te_0.5_) thin films grown on MgO and LaSrAlO_4_ substrates with different transition temperatures (T_c_). The normal Hall coefficients (R_H_) have positive values with magnitude of 1 - 1.5 x 10^-3^ cm^3^/C at room temperature for the all samples. With decreasing temperature, we find two characteristic types of behavior in R_H_(T) depending on T_c_. For thin films with lower T_c_ (typically T_c_ < 5 K), R_H_ start decreasing approximately below T = 250 K toward a negative side, some of which shows sign reversal at T = 50 - 60 K, but turns positive toward T = 0 K. On the other hand for the films with higher T_c_ (typically T_c_ > 9 K), R_ H_ leaves almost unchanged down to T = 100 K, and then starts decreasing toward a negative side. Around the temperatures when R_H_ changes its sign from positive to negative, obvious nonlinearity is observed in the field-dependence of Hall resistance as to keep the low-field R_H_ positive while the high-field R_H_ negative. Thus the electronic state just above T_c_ is characterized by n_e_ (electron density) > n_h_ (hole density) with keeping μ_e_ < μ_h_. These results suggest the dominance of electron density to the hole density is an essential factor for the occurence of superconductivity in Fe-chalcogenide superconductors.

preprint2002arXiv

Magnetic and superconducting properties of Cd2Re2O7: Cd NMR and Re NQR

We report Cd NMR and Re NQR studies on Cd2Re2O7, the first superconductor among pyrochlore oxides Tc=1 K. Re NQR spectrum at zero magnetic field below 100 K rules out any magnetic or charge order. The spin-lattice relaxation rate below Tc exhibits a pronounced coherence peak and behaves within the weak-coupling BCS theory with nearly isotropic energy gap. Cd NMR results point to moderate ferromagnetic enhancement at high temperatures followed by rapid decrease of the density of states below the structural transition temperature of 200 K.