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Researcher profile

I. Tsukada

I. Tsukada contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.supr-concond-mat.mtrl-scicond-mat.str-el

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Published work

2 published item(s)

preprint2011arXiv

Epitaxial growth of FeSe$_{0.5}$Te$_{0.5}$ thin films on CaF$_2$ substrates with high critical current density

In-situ epitaxial growth of FeSe$_{0.5}$Te$_{0.5}$ thin films is demonstrated on a non-oxide substrate CaF$_2$. Structural analysis reveals that compressive stress is moderately added to 36-nm thick FeSe$_{0.5}$Te$_{0.5}$, which pushes up the critical temperature above 15 K, showing higher values than that of bulk crystals. Critical current density at $T$ = 4.5 K reaches 5.9 x 10$^4$ Acm$^{-2}$ at $μ_0H$ = 10 T, and 4.2 x 10$^4$ Acm$^{-2}$ at $μ_0H$ = 14 T. These results indicate that fluoride substrates have high potential for the growth of iron-based superconductors in comparison with popular oxide substrates.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Doping evolution of the electronic specific heat coefficient in slightly-doped La2-xSrxCuO4 single crystals

Detailed doping dependence of the electronic specific heat coefficient gamma is studied for La2-xSrxCuO4 (LSCO) single crystals in the slightly-doped regime. We find that gamma systematically increases with doping, and furthermore, even for the samples in the antiferromagnetic (AF) regime, gamma already acquires finite value and grows with x. This suggests that finite electronic density of states (DOS) is created in the AF regime where the transport shows strong localization at low temperatures, and this means the system is not a real insulator with a clear gap even though it still keeps long range AF order.

0 citations0 reviewsNo code linkedOpen access