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I. Tsukada

Explore this author’s publications, collaborators and research topics. This catalog record has not been claimed by its author.

ResearcherUnclaimed source record
cond-mat.supr-concond-mat.str-elcond-mat.mtrl-sci

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8 publications

preprint2014arXiv

Point-contact Andreev-reflection spectroscopy in Fe(Te,Se) films: multiband superconductivity and electron-boson coupling

We report on a study of the superconducting order parameter in Fe(Te1−x_{1-x}Sex_{x}) thin films (with different Se contents: x=0.3, 0.4, 0.5) by means of point-contact Andreev-reflection spectroscopy (PCARS). The PCARS spectra show reproducible evidence of multiple structures, namely two clear conductance maxima associated to a superconducting gap of amplitude ΔE≃2.75kBTcΔ_E \simeq 2.75 k_B T_c and additional shoulders at higher energy that, as we show, are the signature of the strong interaction of charge carriers with a bosonic mode whose characteristic energy coincides with the spin-resonance energy. The details of some PCARS spectra at low energy suggest the presence of a smaller and not easily discernible gap of amplitude ΔH≃1.75kBTcΔ_H \simeq 1.75 k_B T_c. The existence of this gap and its amplitude are confirmed by PCARS measurements in Fe(Te1−x_{1-x}Sex_{x}) single crystals. The values of the two gaps ΔEΔ_E and ΔHΔ_H, once plotted as a function of the local critical temperature TcAT_c^A, turn out to be in perfect agreement with the results obtained by various experimental techniques reported in literature.

Open access
preprint2012arXiv

Microscopic analysis of the chemical reaction between Fe(Te,Se) thin films and underlying CaF2_2

To understand the chemical reaction at the interface of materials, we performed a transmission electron microscopy (TEM) observation in four types of Fe(Te,Se) superconducting thin films prepared on different types of substrates: CaF2 substrate, CaF2 substrate with a CaF2 buffer layer, CaF2 substrate with a FeSe buffer layer, and a LaAlO3 substrate with a CaF2 buffer layer. Based on the energy-dispersive X-ray spectrometer (EDX) analysis, we found possible interdiffusion between fluorine and selenium that has a strong influence on the superconductivity in Fe(Te,Se) films. The chemical interdiffusion also plays a significant role in the variation of the lattice parameters. The lattice parameters of the Fe(Te,Se) thin films are primarily determined by the chemical substitution of anions, and the lattice mismatch only plays a secondary role.

Open access
preprint2011arXiv

Epitaxial growth of FeSe0.5_{0.5}Te0.5_{0.5} thin films on CaF2_2 substrates with high critical current density

In-situ epitaxial growth of FeSe0.5_{0.5}Te0.5_{0.5} thin films is demonstrated on a non-oxide substrate CaF2_2. Structural analysis reveals that compressive stress is moderately added to 36-nm thick FeSe0.5_{0.5}Te0.5_{0.5}, which pushes up the critical temperature above 15 K, showing higher values than that of bulk crystals. Critical current density at TT = 4.5 K reaches 5.9 x 104^4 Acm−2^{-2} at μ0Hμ_0H = 10 T, and 4.2 x 104^4 Acm−2^{-2} at μ0Hμ_0H = 14 T. These results indicate that fluoride substrates have high potential for the growth of iron-based superconductors in comparison with popular oxide substrates.

Open access
preprint2011arXiv

Hall effect of FeTe and Fe(Se_1-x_Te_x_) thin films

The Hall effect is investigated in thin-film samples of iron-chalcogenide superconductors in detail. The Hall coefficient (RH) of FeTe and Fe(Se1-xTex) exhibits a similar positive value around 300 K, indicating that the high-temperature normal state is dominated by hole-channel transport. FeTe exhibits a sign reversal from positive to negative across the transition to the low-temperature antiferromagnetic state, indicating the occurrence of drastic reconstruction in the band structure. The mobility analysis using the carrier density theoretically calculated reveals that the mobility of holes is strongly suppressed to zero, and hence the electric transport looks to be dominated by electrons. The Se substitution to Te suppresses the antiferromagnetic long-range order and induces superconductivity instead. The similar mobility analysis for Fe(Se0.4Te0.6) and Fe(Se0.5Te0.5) thin films shows that the mobility of electrons increases with decreasing temperature even in the paramagnetic state, and keeps sufficiently high values down to the superconducting transition temperature. From the comparison between FeTe and Fe(Se1-xTex), it is suggested that the coexistence of 'itinerant' carriers both in electron and hole channels is indispensable for the occurrence of superconductivity.

Open access
preprint2010arXiv

Hall effect in superconducting Fe(Se0.5Te0.5) thin films

The Hall effect is investigated for eight superconducting Fe(Se_0.5_Te_0.5_) thin films grown on MgO and LaSrAlO_4_ substrates with different transition temperatures (T_c_). The normal Hall coefficients (R_H_) have positive values with magnitude of 1 - 1.5 x 10^-3^ cm^3^/C at room temperature for the all samples. With decreasing temperature, we find two characteristic types of behavior in R_H_(T) depending on T_c_. For thin films with lower T_c_ (typically T_c_ < 5 K), R_H_ start decreasing approximately below T = 250 K toward a negative side, some of which shows sign reversal at T = 50 - 60 K, but turns positive toward T = 0 K. On the other hand for the films with higher T_c_ (typically T_c_ > 9 K), R_ H_ leaves almost unchanged down to T = 100 K, and then starts decreasing toward a negative side. Around the temperatures when R_H_ changes its sign from positive to negative, obvious nonlinearity is observed in the field-dependence of Hall resistance as to keep the low-field R_H_ positive while the high-field R_H_ negative. Thus the electronic state just above T_c_ is characterized by n_e_ (electron density) > n_h_ (hole density) with keeping μ_e_ < μ_h_. These results suggest the dominance of electron density to the hole density is an essential factor for the occurence of superconductivity in Fe-chalcogenide superconductors.

Open access
preprint2008arXiv

Doping evolution of the electronic specific heat coefficient in slightly-doped La2-xSrxCuO4 single crystals

Detailed doping dependence of the electronic specific heat coefficient gamma is studied for La2-xSrxCuO4 (LSCO) single crystals in the slightly-doped regime. We find that gamma systematically increases with doping, and furthermore, even for the samples in the antiferromagnetic (AF) regime, gamma already acquires finite value and grows with x. This suggests that finite electronic density of states (DOS) is created in the AF regime where the transport shows strong localization at low temperatures, and this means the system is not a real insulator with a clear gap even though it still keeps long range AF order.

Open access
preprint2001arXiv

Structural phase control of (La1.48_{1.48}Nd0.40_{0.40}Sr0.12_{0.12})CuO4_4 thin films by epitaxial growth technique

Epitaxial growth of (La1.48_{1.48}Nd0.40_{0.40}Sr0.12_{0.12})CuO4_4 thin films was studied by pulsed-laser deposition technique on three different substrates, SrTiO3_3 (100), LaSrAlO4_4 (001), and YAlO3_3 (001). The (Nd,Sr,Ce)2_2CuO4_4-type structure appears at the initial growth stage on SrTiO3_3 (100) when the film is deposited under the growth conditions optimized for (La,Sr)2_2CuO4_4. This (Nd,Sr,Ce)2_2CuO4_4-type structure can be eliminated by increasing the substrate temperature and the laser repetition frequency. Films on LaSrAlO4_4 (001) maintain a La2_2CuO4_4-type structure as bulk samples, but those on YAlO3_3 (001) show phase separation into La2_2CuO4_4- and Nd2_2CuO4_4-type structures. Such complicated results are explained in terms of the competition between lattice misfit and thermodynamic conditions. Interestingly the films with La2_2CuO4_4-type structure prepared on SrTiO3_3 and LaSrAlO4_4 show different surface structures and transport properties. The results indicate the possibility of controlling charge stripes of (La1.48_{1.48}Nd0.40_{0.40}Sr0.12_{0.12})CuO4_4 as was demonstrated in (La,Ba)2_2CuO4_4 thin films by Sato et al. (Phys. Rev. B {\bf 62}, R799 (2000)).

Open access
preprint2000arXiv

Magnetic order and spin-waves in the quasi-1D S=1/2 antiferromagnet BaCu2Si2O7{\bf BaCu_{2}Si_{2}O_{7}}

Elastic and inelastic neutron scattering were used to study the ordered phase of the quasi-one-dimensional spin-1/2 antiferromagnet BaCu2Si2O7{\rm BaCu_{2}Si_{2}O_{7}}. The previously proposed model for the low-temperature magnetic structure was confirmed. Spin wave dispersion along several reciprocal-space directions was measured and inter-chain, as well as in-chain exchange constants were determined. A small gap in the spin wave spectrum was observed and attributed to magnetic anisotropy effects. The results are discussed in comparison with existing theories for weakly-coupled quantum spin chain antiferromagnets.

Open access

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