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M. Goto

M. Goto contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sciphysics.app-phcond-mat.mes-hallphysics.plasm-ph

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Published work

4 published item(s)

preprint2022arXiv

Deep modelling of plasma and neutral fluctuations from gas puff turbulence imaging

The role of turbulence in setting boundary plasma conditions is presently a key uncertainty in projecting to fusion energy reactors. To robustly diagnose edge turbulence, we develop and demonstrate a technique to translate brightness measurements of HeI line radiation into local plasma fluctuations via a novel integrated deep learning framework that combines neutral transport physics and collisional radiative theory for the $3^3 D - 2^3 P$ transition in atomic helium. The tenets for experimental validity are reviewed, illustrating that this turbulence analysis for ionized gases is transferable to both magnetized and unmagnetized environments with arbitrary geometries. Based upon fast camera data on the Alcator C-Mod tokamak, we present the first 2-dimensional time-dependent experimental measurements of the turbulent electron density, electron temperature, and neutral density revealing shadowing effects in a fusion plasma using a single spectral line.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Over 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves

To augment the magnetoresistance (MR) ratio of n-type non-degenerate Si-based lateral spin valves (Si-LSVs), we modify the doping profile in the Si layer and introduce a larger local strain into the Si channel by changing a capping insulator. The highest MR ratio of 1.4% is achieved in the Si-LSVs through these improvements, with significant roles played by a reduction in the resistance-area product of the ferromagnetic contacts and an enhancement of the momentum relaxation time in the Si channel.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Skyrmion confinement and dynamics in tracks patterned with magnetic anisotropy: theory and simulations

Skyrmion is a topologically protected spin texture excited in magnetic thin films. The radii of skyrmions are typically 10-100 nm. Because of the size, the skyrmion is expected to be a candidate for memory and novel-device usages. To realize the futuristic devices that will be using the skyrmion circuit, the tracks which guide the motion of skyrmions are needed. The tracks patterned with differences in the magnetic-anisotropy energy are well-paved without a potential pocket, whereas the tracks carved out of magnetic films have the potential pockets at corners due to the demagnetizing field. Therefore, the tracks patterned with the magnetic anisotropy plays a key role in making the skyrmion circuits. The experiment along this idea has been conducted for the hub and bent tracks. However, we have little known the motion of skyrmions in these tracks. This work aims to identify the forces acting between skyrmions and walls of the tracks. The static force on a skyrmion can be expressed as minus the gradient of the potential energy caused by the magnetic-anisotropy undulation. The potential can be estimated numerically, modeling the shape of skyrmions with their radii and domain wall widths. We find that the forces depend not only on the distance from the wall but also on the shape of skyrmions. We have also performed micromagnetic simulations where the Magnus force and the acceleration by the magnetic-anisotropy gradient are taken into account as well as the force by the walls. The simulation results show good agreement with those calculated from the modeled skyrmions.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Gate-tunable spin exclusive or operation in a silicon-based spin device at room temperature

Room temperature operation of a spin exclusive or (XOR) gate was demonstrated in lateral spin valve devices with nondegenerate silicon (Si) channels. The spin XOR gate is a fundamental part of the magnetic logic gate (MLG) that enables reconfigurable and nonvolatile NAND or OR operation in one device. The device for the spin XOR gate consists of three iron (Fe)/cobalt (Co)/magnesium oxide (MgO) electrodes, i.e., two input and one output electrodes. Spins are injected into the Si channel from the input electrodes whose spin angular momentum corresponds to the binary input 1 or 0. The spin drift effect is controlled by a lateral electric field in the Si channel to adjust the spin accumulation voltages under two different parallel configurations, corresponding to (1, 1) and (0, 0), so that they exhibit the same value. As a result, the spin accumulation voltage detected by the output electrode exhibits three different voltages, represented by an XOR gate. The one-dimensional spin drift-diffusion model clearly explains the obtained XOR behavior. Charge current detection of the spin XOR gate is also demonstrated. The detected charge current has a maximum of 0.94 nA, the highest value in spin XOR gates reported thus far. Furthermore, gate voltage modulation of the spin XOR gate is also demonstrated, which enables operation of multiple MLG devices.

0 citations0 reviewsNo code linkedOpen access