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M. F. Churbanov

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3 publications

preprint2014arXiv

Infrared luminescence in Bi-doped Ge-S and As-Ge-S chalcogenide glasses and fibers

Experimental and theoretical studies of spectral properties of chalcogenide Ge-S and As-Ge-S glasses and fibers are performed. A broad infrared (IR) luminescence band which covers the 1.2-2.3~μμm range with a lifetime about 6~μμs is discovered. Similar luminescence is also present in optical fibers drawn from these glasses. Arsenic addition to Ge-S glass significantly enhances both its resistance to crystallization and the intensity of the luminescence. Computer modeling of Bi-related centers shows that interstitial Bi+^+ ions adjacent to negatively charged S vacancies are most likely responsible for the IR luminescence.

preprint2011arXiv

Optical absorption and structure of impurity Ni2+^{2+} center in tungstate-tellurite glass

Absorption spectra of Ni2+^{2+} ions in 22WO3_3--78TeO2_2 tungstate-tellurite glass were studied and Ni2+^{2+} extinction coefficient spectral dependence was derived in the 450 -- 2700 nm wavelength range. Computer modeling of the glass structure proved Ni2+^{2+} ions to be in trigonal-distorted octahedral environment in the tungstate-tellurite glass. Tanabe-Sugano diagram for such an environment was calculated and good description of the observed spectrum of Ni2+^{2+} ion was obtained. Basing on both absorption spectral range width and the extinction coefficient, nickel should be considered among the most strongly absorbing impurities in the tellurite glasses.

preprint2011arXiv

Refractive index spectral dependence, Raman and transmission spectra of high-purity 28^{28}Si, 29^{29}Si, 30^{30}Si, and nat^{nat}Si single crystals

Precise measurement of the refractive index of stable silicon isotopes 28^{28}Si, 29^{29}Si, 30^{30}Si single crystals with enrichments above 99.9 at.% and a silicon single crystal nat^{nat}Si of natural isotopic composition is performed with the Fourier-transform interference refractometry method from 1.06 to more than 80 mkm with 0.1 cm−1^{-1} resolution and accuracy of 2×10−5...1×10−42 \times 10^{-5} ... 1 \times 10^{-4}. The oxygen and carbon concentrations in all crystals are within 5×10155 \times 10^{15} cm−3^{-3} and the content of metal impurities is 10−5...10−610^{-5} ... 10^{-6} at.%. The peculiar changes of the refractive index in the phonon absorption region of all silicon single crystals are shown. The coefficients of generalized Cauchy dispersion function approximating the experimental refractive index values all over the measuring range are given. The transmission and Raman spectra are also studied.

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