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E. M. Dianov

E. M. Dianov appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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physics.opticscond-mat.mtrl-sci

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Published work

12 published item(s)

preprint2015arXiv

Absorption and emission cross section of Yb3+ ions in Al2O3 and P2O5 doped fibers

The results of measurements of the emission and absorption cross section for the transition 2F5/2 -> 2F7/2 of Yb3+ ions in Al2O3 and P2O5 doped silica fibers are presented. Different techniques based on spectroscopic data, and more direct technique involving optical saturation of the transition are employed. The data obtained indicate an essential difference in cross section spectra of Yb3+ ions in alumosilicate and phosphosilicate fibers.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

First-principle study of the near-IR luminescence centers in Bi2O3-GeO2 andBi2O3-SiO2 glasses

First-principle study of bismuth-related oxygen-deficient centers ($=$Bi$\cdots$Ge$\equiv$, $=$Bi$\cdots$Si$\equiv$, and $=$Bi$\cdots$Bi$=$ oxygen vacancies) in Bi$_2$O$_3$-GeO$_2$, Bi$_2$O$_3$-SiO$_2$, Bi$_2$O$_3$-Al$_2$O$_3$-GeO$_2$, and Bi$_2$O$_3$-Al$_2$O$_3$-SiO$_2$ hosts is performed. A comparison of calculated spectral properties of the centers with the experimental data on luminescence emission and excitation spectra suggests that luminescence in the 1.2-1.3 $μ$m and 1.8-3.0 $μ$m ranges in Bi$_2$O$_3$-GeO$_2$ glasses and crystals is likely caused by $=$Bi$\cdots$Ge$\equiv$ and $=$Bi$\cdots$Bi$=$ centers, respectively, and the luminescence near 1.1 $μ$m in Bi$_2$O$_3$-Al$_2$O$_3$-GeO$_2$ glasses and crystals may be caused by $=$Bi$\cdots$Ge$\equiv$ center with (AlO$_4$)$^-$ center in the second coordination shell of Ge atom.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Infrared luminescence in Bi-doped Ge-S and As-Ge-S chalcogenide glasses and fibers

Experimental and theoretical studies of spectral properties of chalcogenide Ge-S and As-Ge-S glasses and fibers are performed. A broad infrared (IR) luminescence band which covers the 1.2-2.3~$μ$m range with a lifetime about 6~$μ$s is discovered. Similar luminescence is also present in optical fibers drawn from these glasses. Arsenic addition to Ge-S glass significantly enhances both its resistance to crystallization and the intensity of the luminescence. Computer modeling of Bi-related centers shows that interstitial Bi$^+$ ions adjacent to negatively charged S vacancies are most likely responsible for the IR luminescence.

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preprint2013arXiv

Centers of near-infrared luminescence in bismuth-doped TlCl and CsI crystals

A comparative first-principles study of possible bismuth-related centers in TlCl and CsI crystals is performed and the results of computer modeling are compared with the experimental data. The calculated spectral properties of the bismuth centers suggest that the IR luminescence observed in TlCl:Bi is most likely caused by Bi--Vac(Cl) centers (Bi^+ ion in thallium site and a negatively charged chlorine vacancy in the nearest anion site). On the contrary, Bi^+ substitutional ions and Bi_2^+ dimers are most likely responsible for the IR luminescence observed in CsI:Bi.

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preprint2013arXiv

Centers of near-IR luminescence in Bi-doped SiO2 and GeO2: First-principle modeling and experimental data analysis

First-principle study of possible bismuth-related centers in SiO2 and GeO2 hosts is performed and the results are compared with the experimental data. The following centers are modeled: trivalent and divalent Bi substitutional centers; BiO interstitial molecule; interstitial ion, Bi^+, and atom, Bi^0; Bi...Si-Si and Bi...Ge-Ge complexes formed by interstitial Bi atoms and glass intrinsic defects, Si-Si or Ge-Ge oxygen vacancies; interstitial dimers, Bi0 and Bi_2^-. Experimental data available on bismuth-related IR luminescence in SiO2:Bi and GeO2:Bi glasses, visible (red) luminescence in SiO2:Bi glass and the luminescence excitation are analyzed. Comparison of the calculated spectral properties of the bismuth-related centers with the experimental data shows that IR luminescence in SiO2:Bi and GeO2:Bi is most likely caused by Bi...Si-Si and Bi...Ge-Ge complexes and divalent Bi substitutional center is probably responsible for the red luminescence in SiO2:Bi.

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preprint2013arXiv

Near-IR luminescence in bismuth-doped AgCl crystals

Experimental and computer-modeling studies of spectral properties of crystalline AgCl doped with metal bismuth or bismuth chloride are performed. Broad near-IR luminescence band in the 0.8--1.2mkm range with time dependence described by two exponential components corresponding to the lifetimes of 1.5 and 10.3mks is excited mainly by 0.39--0.44mkm radiation. Computer modeling of probable Bi-related centers in AgCl lattice is performed. On the basis of experimental and calculation data a conclusion is drawn that the IR luminescence can be caused by Bi^+ ion centers substituted for Ag^+ ions.

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preprint2012arXiv

Thermal behavior of NIR active centers in Bi-doped optical fibers

The temperature dependences of optical loss and luminescence spectra have been measured in visible and NIR spectral range for Bi-doped silica and Bi-doped germanosilicate fibers for the first time. The temperature dependence of luminescence lifetime for Si-associated active bismuth centers in germanosilicate fiber was measured. It has been revealed, that distribution of Bi3+ ions across the fiber preform is essentially different as compared to that of NIR active bismuth centers. Data received indicates that NIR-active centers are associated with the low oxidation state of bismuth ion and/or oxygen deficient center of the glass structure.

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preprint2011arXiv

Interstitial bismuth dimers and single atoms as possible centres of broadband near-IR luminescence in bismuth-doped glasses

Absorption, luminescence and Raman spectra of interstitial bismuth atoms, $\mathrm{Bi}^{0}$, and negatively charged dimers, $\mathrm{Bi}^{2-}$, in alumosilicate, germanosilicate, phosphosilicate and phosphogermanate glasses networks are calculated by time-dependent density functional method. On grounds of this calculation an extension of our previously suggested model of broadband near-IR luminescence in bismuth-doped glasses is put forward.

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preprint2011arXiv

IR Bismuth active centers in optical fibers: Combined excitation-emission spectroscopy

3D excitation-emission luminescence spectra of Bi-doped optical fibers of various compositions were measured in a wide wavelength range 450-1700 nm. Such luminescence spectra were obtained for Bi-doped pure silica and germania fibers, and for Bi-doped Al- or P-codoped silica fibers (at room and liquid nitrogen temperatures). The energy level schemes of IR bismuth active centers in pure silica and germania core fibers were derived from spectra obtained. The energy level schemes similarity of bismuth active centers in these two types of fibers was revealed.

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preprint2011arXiv

Refractive index spectral dependence, Raman and transmission spectra of high-purity $^{28}$Si, $^{29}$Si, $^{30}$Si, and $^{nat}$Si single crystals

Precise measurement of the refractive index of stable silicon isotopes $^{28}$Si, $^{29}$Si, $^{30}$Si single crystals with enrichments above 99.9 at.% and a silicon single crystal $^{nat}$Si of natural isotopic composition is performed with the Fourier-transform interference refractometry method from 1.06 to more than 80 mkm with 0.1 cm$^{-1}$ resolution and accuracy of $2 \times 10^{-5} ... 1 \times 10^{-4}$. The oxygen and carbon concentrations in all crystals are within $5 \times 10^{15}$ cm$^{-3}$ and the content of metal impurities is $10^{-5} ... 10^{-6}$ at.%. The peculiar changes of the refractive index in the phonon absorption region of all silicon single crystals are shown. The coefficients of generalized Cauchy dispersion function approximating the experimental refractive index values all over the measuring range are given. The transmission and Raman spectra are also studied.

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