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M. Eisele

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4 publications

preprint2020arXiv

Fast in situ observation of atomic Feshbach resonances by photoassociative ionization

We propose and experimentally investigate a scheme for observing Feshbach resonances in atomic quantum gases in situ and with a high temporal resolution of several ten nanoseconds. The method is based on the detection of molecular ions, which are optically generated from atom pairs at small interatomic distances. As test system we use a standard rubidium gas (87Rb) with well known magnetically tunable Feshbach resonances. The fast speed and the high sensitivity of our detection scheme allows to observe a complete Feshbach resonance within one millisecond and without destroying the gas.

preprint2016arXiv

Femtosecond THz time domain spectroscopy at 36 kHz scan rate using an acousto-optic delay

We present a rapid-scan, time-domain terahertz spectrometer employing femtosecond Er:fiber technology and an acousto-optic delay with attosecond precision, enabling scanning of terahertz transients over a 12.4 ps time window at a waveform refresh rate of 36 kHz, and a signal-to-noise ratio of 1.7×105/Hz1.7 \times 10^5/\sqrt{\rm Hz}. Our approach enables real-time monitoring of dynamic THz processes at unprecedented speeds, which we demonstrate through rapid 2D thickness mapping of a spinning teflon disc at a precision of 10 nm/Hz10\,\rm nm/\sqrt{\rm Hz}. The compact, all-optical design ensures alignment-free operation even in harsh environments.

preprint2016arXiv

Ultrafast mid-infrared nanoscopy of strained vanadium dioxide nanobeams

Long regarded as a model system for studying insulator-to-metal phase transitions, the correlated electron material vanadium dioxide (VO2_2) is now finding novel uses in device applications. Two of its most appealing aspects are its accessible transition temperature (∼\sim341 K) and its rich phase diagram. Strain can be used to selectively stabilize different VO2_2 insulating phases by tuning the competition between electron and lattice degrees of freedom. It can even break the mesoscopic spatial symmetry of the transition, leading to a quasi-periodic ordering of insulating and metallic nanodomains. Nanostructuring of strained VO2_2 could potentially yield unique components for future devices. However, the most spectacular property of VO2_2 - its ultrafast transition - has not yet been studied on the length scale of its phase heterogeneity. Here, we use ultrafast near-field microscopy in the mid-infrared to study individual, strained VO2_2 nanobeams on the 10 nm scale. We reveal a previously unseen correlation between the local steady-state switching susceptibility and the local ultrafast response to below-threshold photoexcitation. These results suggest that it may be possible to tailor the local photo-response of VO2_2 using strain and thereby realize new types of ultrafast nano-optical devices.

preprint2016arXiv

Ultrafast single-nanowire multi-terahertz spectroscopy with sub-cycle temporal resolution

Phase-locked ultrashort pulses in the rich terahertz (THz) spectral range have provided key insights into phenomena as diverse as quantum confinement, first-order phase transitions, high-temperature superconductivity, and carrier transport in nanomaterials. Ultrabroadband electro-optic sampling of few-cycle field transients can even reveal novel dynamics that occur faster than a single oscillation cycle of light. However, conventional THz spectroscopy is intrinsically restricted to ensemble measurements by the diffraction limit. As a result, it measures dielectric functions averaged over the size, structure, orientation and density of nanoparticles, nanocrystals or nanodomains. Here, we extend ultrabroadband time-resolved THz spectroscopy (20 - 50 THz) to the sub-nanoparticle scale (10 nm) by combining sub-cycle, field-resolved detection (10 fs) with scattering-type near-field scanning optical microscopy (s-NSOM). We trace the time-dependent dielectric function at the surface of a single photoexcited InAs nanowire in all three spatial dimensions and reveal the ultrafast (<<50 fs) formation of a local carrier depletion layer.

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