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M. D. Stewart, Jr.

M. D. Stewart, Jr. contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2025arXiv

Towards autonomous time-calibration of large quantum-dot devices: Detection, real-time feedback, and noise spectroscopy

The performance and scalability of semiconductor quantum-dot (QD) qubits are limited by electrostatic drift and charge noise that shift operating points and destabilize qubit parameters. As systems expand to large one- and two-dimensional arrays, manual recalibration becomes impractical, creating a need for autonomous stabilization frameworks. Here, we introduce a method that uses the full network of charge-transition lines in repeatedly acquired double-quantum-dot charge stability diagrams (CSDs) as a multidimensional probe of the local electrostatic environment. By accurately tracking the motion of selected transitions in time, we detect voltage drifts, identify abrupt charge reconfigurations, and apply compensating updates to maintain stable operating conditions. We demonstrate our approach on a 10-QD device, showing robust stabilization and real-time diagnostic access to dot-specific noise processes. The high acquisition rate of radio-frequency reflectometry CSD measurements also enables time-domain noise spectroscopy, allowing the extraction of noise power spectral densities, the identification of two-level fluctuators, and the analysis of spatial noise correlations across the array. From our analysis, we find that the background noise at 100~$μ$\si{\hertz} is dominated by drift with a power law of $1/f^2$, accompanied by a few dominant two-level fluctuators and an average linear correlation length of $(188 \pm 38)$~\si{\nano\meter} in the device. These capabilities form the basis of a scalable, autonomous calibration and characterization module for QD-based quantum processors, providing essential feedback for long-duration, high-fidelity qubit operations.

preprint2012arXiv

Fabrication and Electrical Characterization of Fully CMOS Si Single Electron Devices

We present electrical data of silicon single electron devices fabricated with CMOS techniques and protocols. The easily tuned devices show clean Coulomb diamonds at T = 30 mK and charge offset drift of 0.01 e over eight days. In addition, the devices exhibit robust transistor characteristics including uniformity within about 0.5 V in the threshold voltage, gate resistances greater than 10 GΩ, and immunity to dielectric breakdown in electric fields as high as 4 MV/cm. These results highlight the benefits in device performance of a fully CMOS process for single electron device fabrication.

preprint2009arXiv

Field Evolution of Coexisting Superconducting and Magnetic Orders in CeCoIn$_5$

We present nuclear magnetic resonance (NMR) measurements on the three distinct In sites of CeCoIn$_5$ with magnetic field applied in the [100] direction. We identify the microscopic nature of the long range magnetic order (LRO) stabilized at low temperatures in fields above 10.2 T while still in the superconducting (SC) state. We infer that the ordered moment is oriented along the $\hat c$-axis and map its field evolution. The study of the field dependence of the NMR shift for the different In sites indicates that the LRO likely coexists with a modulated SC phase, possibly that predicted by Fulde, Ferrell, Larkin, and Ovchinnikov. Furthermore, we discern a field region dominated by strong spin fluctuations where static LRO is absent and propose a revised phase diagram.

preprint2004arXiv

Observation of a subgap density of states in superconductor-normal metal bilayers in the Cooper limit

We present transport and tunneling measurements of Pb-Ag bilayers with thicknesses, $d_{Pb}$ and $d_{Ag}$, that are much less than the superconducting coherence length. The transition temperature, $T_c$, and energy gap, $Δ$, in the tunneling Density of States (DOS) decrease exponentially with $d_{Ag}$ at fixed $d_{Pb}$. Simultaneously, a DOS that increases linearly from the Fermi energy grows and fills nearly 40% of the gap as $T_c$ is 1/10 of $T_c$ of bulk Pb. This behavior suggests that a growing fraction of quasiparticles decouple from the superconductor as $T_c$ goes to 0. The linear dependence is consistent with the quasiparticles becoming trapped on integrable trajectories in the metal layer.