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Researcher profile

M. Cherry

M. Cherry contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.ins-detcond-mat.mtrl-sci

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Published work

3 published item(s)

preprint2019arXiv

High-field Spatial Imaging of Charge Transport in Silicon at Low Temperature

We present direct imaging measurements of charge transport across a 1 cm x 1 cm x 4 mm-thick crystal of high purity silicon ($\sim$15 k$Ω$-cm) at temperatures of 5 K and 500 mK. We use these data to measure the lateral diffusion of electrons and holes as a function of the electric field applied along the [111] crystal axis, and to verify our low-temperature Monte Carlo software. The range of field strengths in this paper exceed those used in the previous study (DOI: 10.1063/1.5049691) by a factor of 10, and now encompasses the region in which some recent silicon dark matter detectors operate (DOI: 10.1103/PhysRevLett.121.051301). We also report on a phenomenon of surface charge trapping which can reduce expected charge collection.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Measuring the Impact Ionization and Charge Trapping Probabilities in SuperCDMS HVeV Phonon Sensing Detectors

A 0.93 gram $1{\times}1{\times}0.4$ cm$^3$ SuperCDMS silicon HVeV detector operated at 30 mK was illuminated by 1.91 eV photons using a room temperature pulsed laser coupled to the cryostat via fiber optic. The detector's response under a variety of specific operating conditions was used to study the detector leakage current, charge trapping and impact ionization in the high-purity Si substrate. The measured probabilities for a charge carrier in the detector to undergo charge trapping (0.713 $\pm$ 0.093%) or cause impact ionization (1.576 $\pm$ 0.110%) were found to be nearly independent of bias polarity and charge-carrier type (electron or hole) for substrate biases of $\pm$ 140 V.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Modeling of Impact Ionization and Charge Trapping in SuperCDMS HVeV Detectors

A model for charge trapping and impact ionization, and an experiment to measure these parameters is presented for the SuperCDMS HVeV detector. A procedure to isolate and quantify the main sources of noise (bulk and surface charge leakage) in the measurements is also describe. This sets the stage to precisely measure the charge trapping and impact ionization probabilities in order to incorporate this model into future dark matter searches.

0 citations0 reviewsNo code linkedOpen access