Researcher profile

M. A. Matin

M. A. Matin contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2020arXiv

Influence of Yb3+on the structural, electrical and optical properties of sol-gel synthesized Ni-Zn nanoferrites

Polycrystalline Yb substituted NiZn nanoferrites with the compositions of Ni0.5Zn0.5YbxFe2-xO4 (x= 0.00, 0.04, 0.08, 0.12, 0.16 and 0.20) have been synthesized using sol gel auto combustion technique. Single phase cubic spinel structure has been confirmed by the X ray diffraction (XRD) patterns. Larger lattice constants of the compositions are found with increasing Yb3+ concentration while the average grain size (52 to 18 nm) has noticeable decrease as Yb3+ content is increased. The presence of all existing elements as well as the purity of the samples has also been confirmed from energy dispersive X ray spectroscopic (EDS) analysis. Frequency dependent dielectric constant, dielectric loss, dielectric relaxation time, AC and DC resistivity of the compositions have also been examined at room temperature. The DC resistivity value is found in the order of 10 to power 10 (omega-cm) which is at least four orders greater than the ferrites prepared by conventional method. This larger value of resistivity attributes due to very small grain size and successfully explained using the Verwey and deBoer hopping conduction model. The contribution of grain and grain boundary resistance has been elucidated using Cole Cole plot. The study of temperature dependent DC resistivity confirms the semiconducting nature of all titled compositions wherein bandgap (optical) increases from 2.73 eV to 3.25 eV with the increase of Yb content. The high value of resistivity is of notable achievement for the compositions that make them a potential candidate for implication in the high frequency applications where reduction of eddy current loss is highly required.

preprint2016arXiv

Design and Performance Analysis of Depletion-Mode InSb Quantum-Well Field-Effect Transistor for Logic Applications

The design of a 1 micrometer gate length depletion-mode InSb quantum-well field-effect transistor (QWFET) with a 10 nm-thick Al2O3 gate dielectric has been optimized using a quantum corrected self-consistent Schrodinger-Poisson (QCSP) and two dimensional drift-diffusion model. The model predicts a very high electron mobility of 4.42 m2V-1s-1 at Vg= 0V, a small pinch off gate voltage (Vp) of -0.25V, a maximum extrinsic transconductance (gm) of 4.94 S/mm and a drain current density of more than 6.04 A/mm. A short-circuit current-gain cut-off frequency (fT) of 374 GHz and a maximum oscillation frequency (fmax) of 645 GHz are predicted for the device. These characteristics make the device a potential candidate for low power, high-speed logic electronic device applications.

preprint2013arXiv

On the Relation between Perfect Tunneling and Band Gaps for SNG Metamaterial Structures

In this article, we have proposed a compact classification of isotropic and homogeneous single negative (SNG) electromagnetic metamaterial based perfect tunneling unit cells. This unified classification has been made by means of the band gap theories and properties of the arrays made up of these unit cells. Based on their reported characteristics, we have proposed new structures that simultaneously show perfect tunneling band and complete band gap (CBG-omni directional stop band for both polarizations). Besides, we have identified a kind of perfect tunneling which can be considered as "phase shifted perfect tunneling". Several interesting and new phenomena like Complete Perfect Tunneling (CPT-omni directional perfect tunneling for both polarizations), Band Gap Shifting,CBG in Double Positive (DPS) material range, etc. have been reported with proper physical and mathematical explanations.