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M. M. Uddin

M. M. Uddin appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.otherphysics.chem-ph

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Published work

14 published item(s)

preprint2023arXiv

Enhancement of photocatalytic performance of V2O5 by rare-earth ions doping, synthesized by facile hydrothermal technique

The rare-earth (RE) elements [Holmium (Ho) and Ytterbium (Yb)] doped vanadium pentoxide (V2O5) with a series of doping concentrations (1 mol.%, 3 mol.%, and 5 mol.%) have been successfully synthesized using environment-friendly facile hydrothermal method. The effect of RE ions on the photocatalytic efficiency of doped V2O5 has also been analyzed. The stable orthorhombic crystal structure of doped V2O5 confirms by the X-ray diffraction with no secondary phase, and high-stressed conditions are generated for the 3 mol.%. The crystallite size, strain, and dislocation density are calculated to perceive the doping effect on the bare V2O5. The optical characteristics have been measured using UV-vis spectroscopy. The absorptions are found to be increased with increasing doping concentrations; however, the bandgap remains in the visible range. The photocatalytic properties are examined for the compounds with varying pH, and it is observed that higher efficiency is exhibited for the pH 7 and catalyst concentration 500 ppm. The highest degradation efficiency is found to be 93% and 95% for the 3 mol.% of Ho and Yb-doped V2O5 samples within 2 hours, respectively. It is elucidated that the RE ions significantly impact the catalytic behavior of V2O5, and the mechanism behind these extraordinary efficiencies has been explained thoroughly.

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preprint2022arXiv

Impact of reaction temperatures on the particle size of V2O5 synthesized by facile hydrothermal technique and their auspicious photocatalytic performance in dye degradation

In this study, a complete study of the effect of hydrothermal reaction temperatures on the synthesis and physical properties of V2O5 using the green facile mild hydrothermal method has been performed with six different temperatures 100 °C to 200 °C, in the step of 20 °C. . The XRD pattern confirm the stable orthorhombic crystal structure of the synthesized samples at all reaction temperatures. The SEM and TEM images demonstrate the particle-like morphology, and these characterizations affirmed that the particles size became larger with the increase of reaction temperatures. The FTIR analysis is employed to study the functional groups, and the obtained results are consistent with the XRD analysis. The bandgap has been estimated at various reaction temperatures using UV-vis diffuse reflectance spectra (UV-DRS) and was found to be varied 2.09 eV to 2.15 eV that are suitable range to absorb a significant amount of visible light. The photocatalysis of methylene blue (MB) with synthesized samples has been accomplished to investigate photocatalytic efficiency. The pure V2O5 synthesized at lower reaction temperature (100 °C) possess a lower bandgap and, accordingly, higher photocatalytic efficiency.

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preprint2021arXiv

Enhanced thermo-mechanical properties of 212 MAX phase borides Zr2AB2 (A = In, Tl): an ab-initio understanding

The discovery of MAX phase borides has added a new dimension for research in the materials science community. In this paper, a first-principles study of the newly known MAX phase borides Zr2AB2 (A = In, Tl) has been carried out. The estimated lattice constants and volumes of the unit cell are found to be consistent with previous study. The dynamical and mechanical stability of the titled compounds have been checked. Fundamental insights into the stiffness constants, elastic moduli, hardness parameters, brittleness and anisotropy indices are presented. The Variation of these mechanical properties was explained based on the Mulliken population analysis and charge density mapping (CDM). The electronic properties have been dealt with by considering electronic band structure and density of states (DOS) which confirmed the metallic nature of Zr2AB2 (A = In, Tl). The lowly dispersive energy bands along the c-direction confirmed anisotropy in conductivity. The analysis of DOS revealed the dominant contribution from Zr-d orbitals to the conductivity with a small contribution from the In/Tl-p states contributing at the Fermi level. The Debye temperature (Theta-D), minimum thermal conductivity (Kmin), Gruneisen parameter and melting temperature (Tm) have been calculated. The higher values of Theta-D and Tm, and lower value of Kmin for Zr2AB2 (A = In, Tl) compared to those of Zr2AC (A = In, Tl). Besides, the specific heat capacities, thermal expansion coefficient, and different thermodynamic potential functions have been calculated. The optical constants have been studied to reveal their possible relevance for application purposes. The reflectivity spectra revealed the applicability of Zr2AB2 (A = In, Tl) as cover materials to diminish the solar heating. The studied physical properties of Zr2AB2 (A = In, Tl) are compared with those of other relevant 212 and 211 MAX phase nanolaminates.

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preprint2021arXiv

Physical properties of predicted MAX phase borides Hf2AB (A = Pb, Bi): a DFT insight

We have used density functional theory to study the recently predicted MAX phase borides Hf2AB (A = Pb, Bi) in where the mechanical, electronic, thermal, and optical properties have been investigated for the first time. A good agreement of the obtained lattice constants with the reported values confirmed the well accuracy of the present calculations. The stiffness constants (Cij) attest to the mechanical stability of all title compounds. The mechanical behaviors have been scrutinized discreetly by considering the bulk modulus, shear modulus, Youngs modulus, as well as hardness parameters. The brittle nature of Hf2AB (A = Pb, Bi) borides has also been confirmed. The electronic band structure and density of states (DOS) revealed the metallic behavior of the titled materials. The anisotropy in electrical conductivity has been disclosed by considering the energy dispersion along different directions. The variation of Vickers hardness is explained in terms of the total DOS of Hf2AB (A = Pb, Bi). The anisotropic nature of the mechanical properties of the phases has also been studied. The technologically important parameters (Debye temperature, minimum thermal conductivity, and Grüneisen parameter) have also been used to evaluate the thermal behaviors of the titled materials. The possibility of Hf2AB (A = Pb, Bi) for use as coating materials has been assessed by studying the reflectivity.

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preprint2020arXiv

Dynamical stability, Vibrational and optical properties of anti-perovskite A3BX (Ti3TlN, Ni3SnN and Co3AlC) phases: a first principles study

We have investigated various physical properties including phonon dispersion, thermodynamic parameters, optical constants, Fermi surface, Mulliken bond population, theoretical Vickers hardness and damage tolerance of anti-perovskite A3BX phases for the first time by employing density functional theory (DFT) methodology based on first principles method. Initially we assessed nine A3BX phases in total and found that only three phases (Ti3TlN, Ni3SnN and Co3AlC) are mechanically and dynamically stable based on analysis of computed elastic constants and phonon dispersion along with phonon density of states. We revisited the structural, elastic and electronic properties of the compounds to judge the reliability of our calculations. Absence of band gap at the Fermi level characterizes the phases under consideration as metallic in nature. The values of Pugh ratio, Poisson ratio and Cauchy factor have predicted the ductile nature associated with strong metallic bonding in these compounds. High temperature feasibility study of the phases has also been performed using the thermodynamic properties, such as the free energy, enthalpy, entropy, heat capacity and Debye temperature. The Vickers hardness of the compounds are estimated to be around 4 GPa which is comparable to many well-known MAX phases, indicating their reasonable hardness and easily machinable nature. The static refractive index n(zero) has been found around 8.0 for the phases under study that appeals as potential candidate to design optoelectronics appliances. The reflectivity is found above 44 percent for the Ti3TlN compound in the energy range of 0 to 14.8 eV demonstrating that this material holds significant promise as a coating agent to avoid solar heating.

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preprint2020arXiv

Influence of Yb3+on the structural, electrical and optical properties of sol-gel synthesized Ni-Zn nanoferrites

Polycrystalline Yb substituted NiZn nanoferrites with the compositions of Ni0.5Zn0.5YbxFe2-xO4 (x= 0.00, 0.04, 0.08, 0.12, 0.16 and 0.20) have been synthesized using sol gel auto combustion technique. Single phase cubic spinel structure has been confirmed by the X ray diffraction (XRD) patterns. Larger lattice constants of the compositions are found with increasing Yb3+ concentration while the average grain size (52 to 18 nm) has noticeable decrease as Yb3+ content is increased. The presence of all existing elements as well as the purity of the samples has also been confirmed from energy dispersive X ray spectroscopic (EDS) analysis. Frequency dependent dielectric constant, dielectric loss, dielectric relaxation time, AC and DC resistivity of the compositions have also been examined at room temperature. The DC resistivity value is found in the order of 10 to power 10 (omega-cm) which is at least four orders greater than the ferrites prepared by conventional method. This larger value of resistivity attributes due to very small grain size and successfully explained using the Verwey and deBoer hopping conduction model. The contribution of grain and grain boundary resistance has been elucidated using Cole Cole plot. The study of temperature dependent DC resistivity confirms the semiconducting nature of all titled compositions wherein bandgap (optical) increases from 2.73 eV to 3.25 eV with the increase of Yb content. The high value of resistivity is of notable achievement for the compositions that make them a potential candidate for implication in the high frequency applications where reduction of eddy current loss is highly required.

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preprint2020arXiv

Mechanical behavior, enhanced dc resistivity, energy band gap and high temperature magnetic properties of Y-substituted Mg-Zn ferrites

We report the synthesis of Y-substituted Mg-Zn ferrites using conventional standard ceramic technique. XRD patterns confirm the single phase cubic spinel structure up to x = 0.03 and appearance of a secondary phase of YFeO3for higher Y contents. FESEM images depict the distribution of grains and EDS spectra confirmed the absence of any unwanted element. Completion of solid state reaction and formation of spinel structure has been revealed from FTIR spectra. The FTIR data along with lattice constant, bulk density and porosity were further used to calculate the stiffness constant (Cij), elastic constant and Debye temperatures. Mechanical stability of all studied compositions is confirmed from Cij using Born stability conditions. Brittleness and isotropic nature are also confirmed using Poisson ratio and anisotropy constants, respectively. The enhancement of dc electrical resistivity with Y content is observed. The energy band gap (increased with Y contents) is found in good agreement with dc electrical resistivity. Ferrimagnetic to paramagnetic phase change has been observed from the field dependent high temperature magnetization curves. The magnetic moments and saturation magnetization were found to be decreased with increasing temperature. The Curie temperature (Tc) has been measured from temperature dependent magnetic moment (M-T) and initial permeability and found to be in good agreement with each other. Decrease in Tc with Y content is due to redistribution of cations and weakening of the exchange coupling constant. The magnetic phase transition has been analyzed by Arrott plot and found to have second order phase transition. The dc resistivity endorses the prepared ferrites are suitable for high frequency and high temperature magnetic device applications as well.

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preprint2020arXiv

Physical properties of new MAX phase borides M2SB (M = Zr, Hf and Nb) in comparison with conventional MAX phase carbides M2SC (M = Zr, Hf and Nb): Comprehensive insights

In this article, a detailed study of the recently synthesized MAX phase borides M2SB (M = Zr, Hf and Nb) has been performed via first principles technique. Investigation of mechanical hardness, elastic anisotropy, optical properties, dynamical stability and thermal properties are considered for the first time. The estimated values of stiffness constants and elastic moduli are found in good agreement with available results. The micro and macro hardness (Hmicro and Hmacro) parameters are calculated. The Vickers hardness is also calculated using Mulliken population analysis. The electronic density of states and charge density mapping are used to explain the variation of stiffness constants, elastic moduli and hardness parameters among the studied ternary borides. The Nb2SB compound is found to show best combination of mechanical properties. Mixture of covalent and ionic bonding within these borides is explained using Mulliken population analysis. The direction dependent values of Youngs modulus, compressibility, shear modulus and Poissons ratio are visualized by 2D and 3D representations and different anisotropic factors are calculated. The important optical constants are calculated and analyzed. The metallic nature of the studied borides is confirmed from the DOS and optical properties. The reflectivity spectra reveal the potential use of Zr2SB as coating materials to diminish solar heating. The studied borides are dynamically stable as confirmed from the phonon dispersion curves. The characteristic thermodynamic properties have also been calculated and analyzed. The physical properties of corresponding 211 MAX phase carbides are also calculated for comparison with those of the titled ternary borides.

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preprint2016arXiv

Design and Performance Analysis of Depletion-Mode InSb Quantum-Well Field-Effect Transistor for Logic Applications

The design of a 1 micrometer gate length depletion-mode InSb quantum-well field-effect transistor (QWFET) with a 10 nm-thick Al2O3 gate dielectric has been optimized using a quantum corrected self-consistent Schrodinger-Poisson (QCSP) and two dimensional drift-diffusion model. The model predicts a very high electron mobility of 4.42 m2V-1s-1 at Vg= 0V, a small pinch off gate voltage (Vp) of -0.25V, a maximum extrinsic transconductance (gm) of 4.94 S/mm and a drain current density of more than 6.04 A/mm. A short-circuit current-gain cut-off frequency (fT) of 374 GHz and a maximum oscillation frequency (fmax) of 645 GHz are predicted for the device. These characteristics make the device a potential candidate for low power, high-speed logic electronic device applications.

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preprint2016arXiv

Effect of Sintering Temperature on Structural and Magnetic Properties of Ni0.6Zn0.4Fe2O4 Ferrite: Synthesized from Nanocrystalline Powders

The effect of sintering temperatures (Ts) on the structural and magnetic properties of Ni0.6Zn0.4Fe2O4 (NZFO) ferrites synthesized by conventional double sintering method has been reported. The samples are sintered at 1200, 1250 and 1300 °C. The X-ray diffraction (XRD) analysis reveals the formation of a single phase cubic spinel structure of the sample. The magnetic parameters such as saturation magnetization, Ms; coercive field, Hc; remanent magnetization, Mr and Bohr magneton, μB are determined and well compared with reported values. The obtained values are found to be 71.94 emu/gm and 1.2 Oe for Ms and Hc, respectively at Ts=1300 oC. Curie temperature (Tc) at various Ts has also been calculated. It is noteworthy to note that the sample with a very low Hc could be used in transformer core and inductor applications.

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preprint2016arXiv

Structural and electrical properties of Sn substituted double sintering derived Ni-Zn ferrite

The Sn substituted Ni-Zn ferrites were synthesized by the standard double sintering technique using nano powders of nickel oxide (NiO), zinc oxide (ZnO), iron oxide (Fe2O3) and tin oxide (SnO2). The structural and electrical properties have been investigated by the X-ray diffraction, scanning electron microscopy, DC resistivity and dielectric measurements. Extra intermediate phase has been detected along with the inverse cubic spinel phase of Ni-Zn ferrite. Enhancement of grain size is observed in Sn substituted Ni-Zn ferrites. DC resistivity as a function of temperature has been investigated by two probe method. The DC resistivity was found to decrease whereas the dielectric constants increase with increasing Sn content in Ni-Zn ferrites. The dielectric constant of the as prepared samples is high enough to use these materials in miniaturized memory devices based capacitive components or energy storage principles.

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preprint2015arXiv

Structural Properties, Impedance Spectroscopy and Dielectric Spin Relaxation of Ni-Zn Ferrite Synthesized by Double Sintering Technique

Structural properties, impedance, dielectric and electric modulus spectra have been used to investigate the sintering temperature (Ts) effect on the single phase cubic spinel Ni0.6Zn0.4Fe2O4 (NZFO) ceramics synthesized by standard ceramic technique. Enhancement of dielectric constants is observed with increasing Ts. The collective contribution of n-type and p-type carriers yields a clear peak in notable unusual dielectric behavior is successfully explained by the Rezlescu model. The non-Debye type long range dielectric relaxation phenomena is explained by electric modulus formalism. Fast response of the grain boundaries of the sample sintered at lower Ts sample leading to small dielectric spin relaxation time, t (several nanoseconds) have been determined using electric modulus spectra for the samples sintered at different Ts. Two clear semicircles in impedance Cole-Cole plot have also been successfully explained by employing two parallel RC equivalent circuits in series configuration taking into account no electrode contribution. Such a long relaxation time in NZFO ceramics could suitably be used in nanoscale spintronic devices.

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preprint2013arXiv

Gate depletion of an InSb two-dimensional electron gas

We investigated the gate control of a two-dimensional electron gas (2DEG) confined to InSb quantum wells with an Al2O3 gate dielectric formed by atomic layer deposition on a surface layer of Al0.1In0.9Sb or InSb. The wider bandgap of Al0.1In0.9Sb compared to InSb resulted in a linear, sharp, and non-hysteretic response of the 2DEG density to gate bias in the structure with an Al0.1In0.9Sb surface layer. In contrast, a nonlinear, slow, and hysteretic (nonvolatile-memory-like) response was observed in the structure with an InSb surface layer. The 2DEG with the Al0.1In0.9Sb surface layer was completely depleted by application of a small gate voltage (-0.9 V).

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preprint2012arXiv

Characterization of InSb quantum wells with atomic layer deposited gate dielectrics

We report magnetotransport measurements of a gated InSb quantum well (QW) with high quality Al2O3 dielectrics (40 nm thick) grown by atomic layer deposition. The magnetoresistance data demonstrate a parallel conduction channel in the sample at zero gate voltage (Vg). A good interface between Al2O3 and the top InSb layer ensures that the parallel channel is depleted at negative Vg and the density of two-dimensional electrons in the QW is tuned by Vg with a large ratio of 6.5x1014 m-2V-1 but saturates at large negative Vg. These findings are closely related to layer structures of the QW as suggested by self-consistent Schrodinger-Poisson simulation and two-carrier model.

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