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Luke Yates

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cond-mat.mtrl-sci physics.app-ph cond-mat.mes-hall hep-th math-ph math.MP Methodology

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preprint2022arXiv

Cross validation for model selection: a primer with examples from ecology

The growing use of model-selection principles in ecology for statistical inference is underpinned by information criteria (IC) and cross-validation (CV) techniques. Although IC techniques, such as Akaike's Information Criterion, have been historically more popular in ecology, CV is a versatile and increasingly used alternative. CV uses data splitting to estimate model scores based on (out-of-sample) predictive performance, which can be used even when it is not possible to derive a likelihood (e.g., machine learning) or count parameters precisely (e.g., mixed-effects models and penalised regression). Here we provide a primer to understanding and applying CV in ecology. We review commonly applied variants of CV, including approximate methods, and make recommendations for their use based on the statistical context. We explain some important -- but often overlooked -- technical aspects of CV, such as bias correction, estimation uncertainty, score selection, and parsimonious selection rules. We also address misconceptions (and truths) about impediments to the use of CV, including computational cost and ease of implementation, and clarify the relationship between CV and information-theoretic approaches to model selection. The paper includes two ecological case studies which illustrate the application of the techniques. We conclude that CV-based model selection should be widely applied to ecological analyses, because of its robust estimation properties and the broad range of situations for which it is applicable. In particular, we recommend using leave-one-out (LOO) or approximate LOO CV to minimise bias, or otherwise K-fold CV using bias correction if K<10. To mitigate overfitting, we recommend calibrated selection via the modified one-standard-error rule which accounts for the predominant cause of overfitting: score-estimation uncertainty.

preprint2022arXiv

Measurements and Numerical Calculations of Thermal Conductivity to Evaluate the Quality of β-Gallium Oxide Thin Films Grown on Sapphire and Silicon Carbide by Molecular Beam Epitaxy

We report a method to obtain insights into lower thermal conductivity of β-Ga2O3 thin films grown by molecular beam epitaxy (MBE) on c-plane sapphire and 4H-SiC substrates. We compare experimental values against the numerical predictions to decipher the effect of boundary scattering and defects in thin-films. We used time domain thermoreflectance (TDTR) to perform the experiments, density functional theory and the Boltzmann transport equation for thermal conductivity calculations, and the diffuse mismatch model for TBC predictions. The experimental thermal conductivities were approximately 3 times smaller than those calculated for perfect Ga2O3 crystals of similar size. When considering the presence of grain boundaries, gallium and oxygen vacancies, and stacking faults in the calculations, the crystals that present around 1% of gallium vacancies and a density of stacking faults of 106 faults/cm were the ones whose thermal conductivities were closer to the experimental results. Our analysis suggests the level of different types of defects present in the Ga2O3 crystal that could be used to improve the quality of MBE-grown samples by reducing these defects and thereby produce materials with higher thermal conductivities.

preprint2020arXiv

Simultaneous Evaluation of Heat Capacity and In-plane Thermal Conductivity of Nanocrystalline Diamond Thin Films

As wide bandgap electronic devices have continued to advance in both size reduction and power handling capabilities, heat dissipation has become a significant concern. To mitigate this, chemical vapor deposited (CVD) diamond has been demonstrated as an effective solution for thermal management of these devices by directly growing onto the transistor substrate. A key aspect of power and radio frequency (RF) electronic devices involves transient switching behavior, which highlights the importance of understanding the temperature dependence of the heat capacity and thermal conductivity when modeling and predicting device electrothermal response. Due to the complicated microstructure near the interface between CVD diamond and electronics, it is difficult to measure both properties simultaneously. In this work, we use time domain thermoreflectance (TDTR) to simultaneously measure the in plane thermal conductivity and heat capacity of a 1 um thick CVD diamond film, and also use the pump as an effective heater to perform temperature dependent measurements. The results show that the in plane thermal conductivity varied slightly with an average of 103 W per meter per K over a temperature range of 302 to 327 K, while the specific heat capacity has a strong temperature dependence over the same range and matches with heat capacity data of natural diamond in literature.

preprint2019arXiv

Experimental Observation of High Intrinsic Thermal Conductivity of AlN

AlN is an ultra-wide bandgap semiconductor which has been developed for applications including power electronics and optoelectronics. Thermal management of these applications is the key for stable device performance and allowing for long lifetimes. AlN, with its potentially high thermal conductivity, can play an important role serving as a dielectric layer, growth substrate, and heat spreader to improve device performance. However, the intrinsic high thermal conductivity of bulk AlN predicted by theoretical calculations has not been experimentally observed because of the difficulty in producing materials with low vacancy and impurity levels, and other associated defect complexes in AlN which can decrease the thermal conductivity. This work reports the growth of thick AlN layers by MOCVD with an air-pocketed AlN layer and the first experimental observation of intrinsic thermal conductivity from 130 K to 480 K that matches density-function-theory calculations for single crystal AlN, producing some of the highest values ever measured. Detailed material characterizations confirm the high quality of these AlN samples with one or two orders of magnitude lower impurity concentrations than seen in commercially available bulk AlN. Measurements of these commercially available bulk AlN substrates from 80 K to 480 K demonstrated a lower thermal conductivity, as expected. A theoretical thermal model is built to interpret the measured temperature dependent thermal conductivity. Our work demonstrates that it is possible to obtain theoretically high values of thermal conductivity in AlN and such films may impact the thermal management and reliability of future electronic and optoelectronics devices.

preprint2011arXiv

A class of quadratic deformations of Lie superalgebras

We study certain Z_2-graded, finite-dimensional polynomial algebras of degree 2 which are a special class of deformations of Lie superalgebras, which we call quadratic Lie superalgebras. Starting from the formal definition, we discuss the generalised Jacobi relations in the context of the Koszul property, and give a proof of the PBW basis theorem. We give several concrete examples of quadratic Lie superalgebras for low dimensional cases, and discuss aspects of their structure constants for the `type I' class. We derive the equivalent of the Kac module construction for typical and atypical modules, and a related direct construction of irreducible modules due to Gould. We investigate in detail one specific case, the quadratic generalisation gl_2(n/1) of the Lie superalgebra sl(n/1). We formulate the general atypicality conditions at level 1, and present an analysis of zero-and one-step atypical modules for a certain family of Kac modules.