Researcher profile

Abdullah Mamun

Abdullah Mamun contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2023arXiv

ActSafe: Predicting Violations of Medical Temporal Constraints for Medication Adherence

Prescription medications often impose temporal constraints on regular health behaviors (RHBs) of patients, e.g., eating before taking medication. Violations of such medical temporal constraints (MTCs) can result in adverse effects. Detecting and predicting such violations before they occur can help alert the patient. We formulate the problem of modeling MTCs and develop a proof-of-concept solution, ActSafe, to predict violations of MTCs well ahead of time. ActSafe utilizes a context-free grammar based approach for extracting and mapping MTCs from patient education materials. It also addresses the challenges of accurately predicting RHBs central to MTCs (e.g., medication intake). Our novel behavior prediction model, HERBERT , utilizes a basis vectorization of time series that is generalizable across temporal scale and duration of behaviors, explicitly capturing the dependency between temporally collocated behaviors. Based on evaluation using a real-world RHB dataset collected from 28 patients in uncontrolled environments, HERBERT outperforms baseline models with an average of 51% reduction in root mean square error. Based on an evaluation involving patients with chronic conditions, ActSafe can predict MTC violations a day ahead of time with an average F1 score of 0.86.

preprint2019arXiv

Experimental Observation of High Intrinsic Thermal Conductivity of AlN

AlN is an ultra-wide bandgap semiconductor which has been developed for applications including power electronics and optoelectronics. Thermal management of these applications is the key for stable device performance and allowing for long lifetimes. AlN, with its potentially high thermal conductivity, can play an important role serving as a dielectric layer, growth substrate, and heat spreader to improve device performance. However, the intrinsic high thermal conductivity of bulk AlN predicted by theoretical calculations has not been experimentally observed because of the difficulty in producing materials with low vacancy and impurity levels, and other associated defect complexes in AlN which can decrease the thermal conductivity. This work reports the growth of thick AlN layers by MOCVD with an air-pocketed AlN layer and the first experimental observation of intrinsic thermal conductivity from 130 K to 480 K that matches density-function-theory calculations for single crystal AlN, producing some of the highest values ever measured. Detailed material characterizations confirm the high quality of these AlN samples with one or two orders of magnitude lower impurity concentrations than seen in commercially available bulk AlN. Measurements of these commercially available bulk AlN substrates from 80 K to 480 K demonstrated a lower thermal conductivity, as expected. A theoretical thermal model is built to interpret the measured temperature dependent thermal conductivity. Our work demonstrates that it is possible to obtain theoretically high values of thermal conductivity in AlN and such films may impact the thermal management and reliability of future electronic and optoelectronics devices.