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Source author record

Lukasz Plucinski

Lukasz Plucinski appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-el

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Published work

8 published item(s)

preprint2026arXiv

Probing the band structure of the strongly correlated antiferromagnet NiPS3 across its phase transition

NiPS3 is an exfoliable van-der-Waals intralayer antiferromagnet with zigzag-type spin arrangement. It is distinct from other TMPS3 (TM: transition metal) materials by optical excitations into a strongly correlated state that is tied to the magnetic properties. However, the related, fundamental band structure across the antiferromagnetic phase transition has not been probed yet. Here, we use angular-resolved photoelectron spectroscopy with μm resolution in combination with DFT+U calculations for that purpose. We identify a characteristic band shift across TN. It is attributed to bands of mixed Ni and S character related to the superexchange interaction of Ni 3t2g orbitals. Moreover, we find a structure above the valence band maximum with little angular dispersion that could not be reproduced by the calculations. The discrepancy suggests the influence of many-body interactions beyond the DFT+U approximations in striking contrast to the results on MnPS3 and FePS3, where these calculations were sufficient for an adequate description.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Temperature-dependent spin-resolved electronic structure of EuO thin films

The electronic structure of the ferromagnetic semiconductor EuO is investigated by means of spin- and angle-resolved photoemission spectroscopy (spin-ARPES) and density functional theory. EuO exhibits unique properties of hosting both weakly-dispersive nearly fully polarized Eu $4f$ bands, as well as O $2p$ levels indirectly exchange-split by the interaction with Eu nearest neighbors. Our temperature-dependent spin-ARPES data directly demonstrates the exchange splitting in O $2p$ and its vanishing at the Curie temperature. Our calculations with a Hubbard $U$ term reveal a complex nature of the local exchange splitting on the oxygen site and in conduction bands. We discuss the mechanisms of the indirect exchange in the O 2p levels by analyzing orbital-resolved band characters in ferromagnetic and antiferromagnetic phases. The directional effects due to spin-orbit coupling are predicted theoretically to be significant in particular in the Eu 4f band manifold. The analysis of the shape of spin-resolved spectra in the Eu $4f$ spectral region reveals signatures of hybridization with O $2p$, in agreement with the theoretical predictions. We also analyze spectral changes in the spin-integrated spectra throughout the Curie temperature and demonstrate they derive from both the magnetic phase transition and effects due to sample aging, unavoidable for this highly reactive material.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Observation of high-temperature quantum anomalous Hall regime in intrinsic MnBi$_2$Te$_4$/Bi$_2$Te$_3$ superlattice

The quantum anomalous Hall effect is a fundamental transport response of a topologically non-trivial system in zero magnetic field. Its physical origin relies on the intrinsically inverted electronic band structure and ferromagnetism, and its most consequential manifestation is the dissipation-free flow of chiral charge currents at the edges that can potentially transform future quantum electronics. Here we report a previously unknown Berry-curvature-driven anomalous Hall regime ('Q-window') at above-Kelvin temperatures in the magnetic topological bulk crystals where through growth Mn ions self-organize into a period-ordered MnBi$_2$Te$_4$/Bi$_2$Te$_3$ superlattice. Robust ferromagnetism of the MnBi$_2$Te$_4$ monolayers opens a large surface gap, and anomalous Hall conductance reaches an $e^2/h$ quantization plateau when the Fermi level is tuned into this gap within a Q-window in which the anomalous Hall conductance from the bulk is to a high precision zero. The quantization in this new regime is not obstructed by the bulk conduction channels and thus should be present in a broad family of topological magnets.

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preprint2015arXiv

Functional Materials for Information and Energy Technology: Insights by Photoelectron Spectroscopy

The evolution of both information and energy technology is intimately connected to complex condensed matter systems, the properties of which are determined by electronic and chemical interactions and processes on a broad range of length and time scales. Dedicated photoelectron spectroscopy and spectromicroscopy experiments can provide important insights. We discuss some recent methodological developments with application to relevant questions in spintronics, and towards in-operando studies of resistive switching and electrochemical processes.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Quasi 2D electronic states with high spin-polarization in centrosymmetric MoS$_2$ bulk crystals

Time reversal dictates that nonmagnetic, centrosymmetric crystals cannot be spin-polarized as a whole. However, it has been recently shown that the electronic structure in these crystals can in fact show regions of high spin-polarization, as long as it is probed locally in real and in reciprocal space. In this article we present the first observation of this type of compensated polarization in MoS$_2$ bulk crystals. Using spin- and angle-resolved photoemission spectroscopy (ARPES) we directly observed a spin-polarization of more than 65% for distinct valleys in the electronic band structure. By additionally evaluating the probing depth of our method we find that these valence band states at the $\overline{\text{K}}$ point in the Brillouin zone are close to fully polarized for the individual atomic trilayers of MoS$_2$, which is confirmed by our density functional theory calculations. Furthermore, we show that this spin-layer locking leads to the observation of highly spin-polarized bands in ARPES since these states are almost completely confined within two dimensions. Our findings prove that these highly desired properties of MoS$_2$ can be accessed without thinning it down to the monolayer limit.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Realization of a vertical topological p-n junction in epitaxial $\mathrm{Sb_2Te_3 / Bi_2Te_3}$ heterostructures

3D topological insulators are a new state of quantum matter which exhibits both a bulk band structure with an insulating energy gap as well as metallic spin-polarized Dirac fermion states when interfaced with a topologically trivial material. There have been various attempts to tune the Dirac point to a desired energetic position for exploring its unusual quantum properties. Here we show a direct experimental proof by angle-resolved photoemission of the realization of a vertical topological p-n junction made of a heterostructure of two different binary 3D TI materials $\mathrm{Bi_2Te_3}$ and $\mathrm{Sb_2Te_3}$ epitaxially grown on Si(111). We demonstrate that the chemical potential is tunable by about 200 meV when decreasing the upper $\mathrm{Sb_2Te_3}$ layer thickness from 25 to 6 quintuple layers without applying any external bias. These results make it realistic to observe the topological exciton condensate and pave the way of exploring other exotic quantum phenomena in the near future.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Sub-nm wide electron channels protected by topology

Helical locking of spin and momentum and prohibited backscattering are the key properties of topologically protected states. They are expected to enable novel types of information processing such as spintronics by providing pure spin currents, or fault tolerant quantum computation by using the Majorana fermions at interfaces of topological states with superconductors. So far, the required helical conduction channels used to realize Majorana fermions are generated through application of an axial magnetic field to conventional semiconductor nanowires. Avoiding the magnetic field enhances the possibilities for circuit design significantly. Here, we show that sub-nanometer wide electron channels with natural helicity are present at surface step-edges of the recently discovered topological insulator Bi14Rh3I9. Scanning tunneling spectroscopy reveals the electron channels to be continuous in both energy and space within a large band gap of 200 meV, thereby, evidencing its non-trivial topology. The absence of these channels in the closely related, but topologically trivial insulator Bi13Pt3I7 corroborates the channels' topological nature. The backscatter-free electron channels are a direct consequence of Bi14Rh3I9's structure, a stack of 2D topologically insulating, graphene-like planes separated by trivial insulators. We demonstrate that the surface of Bi14Rh3I9 can be engraved using an atomic force microscope, allowing networks of protected channels to be patterned with nm precision.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Tuning the Dirac point to the Fermi level in the ternary topological insulator (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$

In order to stabilize Majorana excitations within vortices of proximity induced topological superconductors, it is mandatory that the Dirac point matches the Fermi level rather exactly, such that the conventionally confined states within the vortex are well separated from the Majorana-type excitation. Here, we show by angle resolved photoelectron spectroscopy that (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ thin films with $x=0.94$ prepared by molecular beam epitaxy and transferred in ultrahigh vacuum from the molecular beam epitaxy system to the photoemission setup matches this condition. The Dirac point is within 10 meV around the Fermi level and we do not observe any bulk bands intersecting the Fermi level.

0 citations0 reviewsNo code linkedOpen access