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Lujun Zhu

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cond-mat.mes-hall cond-mat.mtrl-sci physics.app-ph

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preprint2026arXiv

Evidence for strong localization of orbital polarization

Whether orbital polarization propagates has become the most essential question of the blooming orbitronics that aims to generate non-local orbital torque and orbital pumping. Recent theories have suggested a strong orbital Hall effect within the light metal Al and a strong orbital Rashba effect at Co/Al interfaces, providing ideal platforms for experimental verification of possible orbital transport effects. Here, we report robust experimental evidence for the strong localization of orbital polarization. We demonstrate that neither the bulk nor the interface of the Al contributes a detectable orbital torque on adjacent magnetic layer with strong bulk and interfacial spin-orbit coupling necessary for potential orbital-spin conversion. These results have clarified that orbital polarization undergoes much faster relaxation than spin polarization and hardly participates in non-local accumulation, transport, or torque generation. The experimental evidence for strong localization of orbital polarization represents a groundbreaking advance towards solving the essential orbital torque debate.

preprint2021arXiv

Interfacial Dzyaloshinskii-Moriya interaction and spin-orbit torque in Au1-xPtx/Co bilayers with varying interfacial spin-orbit coupling

The quantitative roles of the interfacial spin-orbit coupling (SOC) in Dzyaloshinskii-Moriya interaction (DMI) and dampinglike spin-orbit torque (τDL) have remained unsettled after a decade of intensive study. Here, we report a conclusive experiment evidence that, because of the critical role of the interfacial orbital hybridization, the interfacial DMI is not necessarily a linear function of the interfacial SOC, e.g. at Au1-xPtx/Co interfaces where the interfacial SOC can be tuned significantly via strongly composition (x)-dependent spin-orbit proximity effect without varying the bulk SOC and the electronegativity of the Au1-xPtx layer. We also find that τDL in the Au1-xPtx/Co bilayers varies distinctly from the interfacial SOC as a function of x, indicating no important τDL contribution from the interfacial Rashba-Edelstein effect.

preprint2020arXiv

Origin of Strong Two-Magnon Scattering in Heavy Metal/Ferromagnet/Oxide Heterostructures

We experimentally investigate the origin of the two-magnon scattering (TMS) in heavy-metal (HM)/ferromagnet (FM)/oxide heterostructures (FM = Co, Ni81Fe19, or Fe60Co20B20) by varying the materials located above and below the FM layers. We show that strong TMS in HM/FM/oxide systems arises primarily at the HM/FM interface and increases with the strength of interfacial spin-orbit coupling and magnetic roughness at this interface. TMS at the FM/oxide interface is relatively weak, even in systems where spin-orbit coupling at this interface generates strong interfacial magnetic anisotropy. We also suggest that the spin-current-induced excitation of non-uniform short-wavelength magnon at the HM/FM interface may function as a mechanism of spin memory loss for the spin-orbit torque exerted on the uniform mode.

preprint2019arXiv

Energy-efficient ultrafast SOT-MRAMs based on low-resistivity spin Hall metal Au0.25Pt0.75

Many key electronic technologies (e.g., large-scale computing, machine learning, and superconducting electronics) require new memories that are fast, reliable, energy-efficient, and of low-impedance at the same time, which has remained a challenge. Non-volatile magnetoresistive random access memories (MRAMs) driven by spin-orbit torques (SOTs) have promise to be faster and more energy-efficient than conventional semiconductor and spin-transfer-torque magnetic memories. This work reports that the spin Hall effect of low-resistivity Au0.25Pt0.75 thin films enables ultrafast antidamping-torque switching of SOT-MRAM devices for current pulse widths as short as 200 ps. If combined with industrial-quality lithography and already-demonstrated interfacial engineering, our results show that an optimized MRAM cell based on Au0.25Pt0.75 can have energy-efficient, ultrafast, and reliable switching, e.g. a write energy of < 1 fJ (< 50 fJ) for write error rate of 50% (<1e-5) for 1 ns pulses. The antidamping torque switching of the Au0.25Pt0.75 devices is 10 times faster than expected from a rigid macrospin model, most likely because of the fast micromagnetics due to the enhanced non-uniformity within the free layer. These results demonstrate the feasibility of Au0.25Pt0.75-based SOT-MRAMs as a candidate for ultrafast, reliable, energy-efficient, low-impedance, and unlimited-endurance memory.