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Lucian Covaci

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Published work

10 published item(s)

preprint2026arXiv

Evolution of the Berry curvature dipole in uniaxially strained bilayer graphene

While in pristine bilayer graphene the Berry curvature dipole (BCD), a necessary ingredient for the nonlinear anomalous Hall effect, is zero, uniaxial strain can give rise to finite BCD. We investigate this by using a tight-binding (TB) approach build on the Slater-Koster parameterization to capture lattice deformation effects often missed by continuum models. We demonstrate that the BCD's evolution with strain and doping is highly sensitive to the choice in parameterization, particularly when including the longer range interlayer skew hoppings. Additionally, out-of-plane compression enhances the response by broadening the Dirac cones. These findings benchmark low-energy continuum models and highlight the necessity of realistic tight-binding models for accurately predicting strain-engineered Hall effects in bilayer graphene.

preprint2020arXiv

Evidence of Flat Bands and Correlated States in Buckled Graphene Superlattices

Two-dimensional atomic crystals can radically change their properties in response to external influences such as substrate orientation or strain, resulting in essentially new materials in terms of the electronic structure. A striking example is the creation of flat-bands in bilayer-graphene for certain 'magic' twist-angles between the orientations of the two layers. The quenched kinetic-energy in these flat-bands promotes electron-electron interactions and facilitates the emergence of strongly-correlated phases such as superconductivity and correlated-insulators. However, the exquisite fine-tuning required for finding the magic-angle where flat-bands appear in twisted-bilayer graphene, poses challenges to fabrication and scalability. Here we present an alternative route to creating flat-bands that does not involve fine tuning. Using scanning tunneling microscopy and spectroscopy, together with numerical simulations, we demonstrate that graphene monolayers placed on an atomically-flat substrate can be forced to undergo a buckling-transition, resulting in a periodically modulated pseudo-magnetic field, which in turn creates a post-graphene material with flat electronic bands. Bringing the Fermi-level into these flat-bands by electrostatic doping, we observe a pseudogap-like depletion in the density-of-states, which signals the emergence of a correlated-state. The described approach of 2D crystal buckling offers a strategy for creating other superlattice systems and, in particular, for exploring interaction phenomena characteristic of flat-bands.

preprint2020arXiv

KITE: high-performance accurate modelling of electronic structure and response functions of large molecules, disordered crystals and heterostructures

We present KITE, a general purpose open-source tight-binding software for accurate real-space simulations of electronic structure and quantum transport properties of large-scale molecular and condensed systems with tens of billions of atomic orbitals (N~10^10). KITE's core is written in C++, with a versatile Python-based interface, and is fully optimised for shared memory multi-node CPU architectures, thus scalable, efficient and fast. At the core of KITE is a seamless spectral expansion of lattice Green's functions, which enables large-scale calculations of generic target functions with uniform convergence and fine control over energy resolution. Several functionalities are demonstrated, ranging from simulations of local density of states and photo-emission spectroscopy of disordered materials to large-scale computations of optical conductivity tensors and real-space wave-packet propagation in the presence of magneto-static fields and spin-orbit coupling. On-the-fly calculations of real-space Green's functions are carried out with an efficient domain decomposition technique, allowing KITE to achieve nearly ideal linear scaling in its multi-threading performance. Crystalline defects and disorder, including vacancies, adsorbates and charged impurity centers, can be easily set up with KITE's intuitive interface, paving the way to user-friendly large-scale quantum simulations of equilibrium and non-equilibrium properties of molecules, disordered crystals and heterostructures subject to a variety of perturbations and external conditions.

preprint2015arXiv

An electric-field driven Mott metal-insulator transition in correlated thin films: an inhomogeneous dynamical mean-field theory approach

Simulations are carried out based on the dynamical mean-field theory (DMFT) in order to investigate the properties of correlated thin films for various values of the chemical potential, temperature, interaction strength, and applied transverse electric field. Application of a sufficiently strong field to a thin film at half-filling leads to the appearance of conducting regions near the surfaces of the film, whereas in doped slabs the application of a field leads to a conductivity enhancement on one side of the film and a gradual transition to the insulating state on the opposite side. In addition to the inhomogeneous DMFT, an independent layer approximation (ILA) is considered, in which the properties of each layer are approximated by a homogeneous bulk environment. A comparison between the two approaches reveals that the less expensive ILA results are in good agreement with the DMFT approach, except close to the metal-to-insulator transition points and in the layers immediately at the film surfaces. The hysteretic behavior (memory effect) characteristic of the bulk doping driven Mott transition persists in the slab.

preprint2015arXiv

Collapse of the low temperature insulating state in Cr-doped V$_2$O$_3$ thin films

We have grown epitaxial Cr-doped V$_2$O$_3$ thin films with Cr concentrations between $0$ and $20\%$ on $(0001)$-Al$_2$O$_3$ by oxygen-assisted molecular beam epitaxy. For the highly doped samples (> $3\%$), a regular and monotonous increase of the resistance with decreasing temperature is measured. Strikingly, in the low doping samples (between $1\%$ and $3\%$), a collapse of the insulating state is observed with a reduction of the low temperature resistivity by up to 5 orders of magnitude. A vacuum annealing at high temperature of the films recovers the low temperature insulating state for doping levels below $3\%$ and increases the room temperature resistivity towards the values of Cr-doped V$_2$O$_3$ single crystals. It is well-know that oxygen excess stabilizes a metallic state in V$_2$O$_3$ single crystals. Hence, we propose that Cr doping promotes oxygen excess in our films during deposition leading to the collapse of the low temperature insulating state at low Cr concentrations. These results suggest that slightly Cr-doped V$_2$O$_3$ films can be interesting candidates for field effect devices.

preprint2015arXiv

Real-space calculation of the conductivity tensor for disordered topological matter

We describe an efficient numerical approach to calculate the longitudinal and transverse Kubo conductivities of large systems using Bastin's formulation. We expand the Green's functions in terms of Chebyshev polynomials and compute the conductivity tensor for any temperature and chemical potential in a single step. To illustrate the power and generality of the approach, we calculate the conductivity tensor for the quantum Hall effect in disordered graphene and analyze the effect of the disorder in a Chern insulator in Haldane's model on a honeycomb lattice.

preprint2015arXiv

Using magnetic stripes to stabilize superfluidity in electron-hole double monolayer graphene

Experiments have confirmed that double monolayer graphene cannot generate finite temperature electron-hole superfluidity. This has been shown to be due to very strong screening of the electron-hole pairing attraction. The linear dispersing energy bands in monolayer graphene prevent attempts to reduce the strength of the screening. We propose a new hybrid device in which the two sheets of monolayer graphene are placed in a modulated periodic perpendicular magnetic field. Such a magnetic field preserves the isotropic Dirac cones of the original monolayers but it reduces the slope of the cones so that the monolayer Fermi velocity $v_F$ is smaller. We show that with current experimental techniques, this reduction in $v_F$ can sufficiently weaken the screening to permit electron-hole superfluidity at measurable temperatures.

preprint2011arXiv

Superconducting proximity effect in graphene under inhomogeneous strain

The interplay between quantum Hall states and Cooper pairs is usually hindered by the suppression of the superconducting state due to the strong magnetic fields needed to observe the quantum Hall effect. From this point of view graphene is special since it allows the creation of strong pseudo-magnetic fields due to strain. We show that in a Josephson junction made of strained graphene, Cooper pairs will diffuse into the strained region. The pair correlation function will be sub-lattice polarized due to the polarization of the local density of states in the zero pseudo-Landau level. We uncover two regimes; 1) one in which the cyclotron radius is larger than the junction length in which case the supercurrent will be enhanced, and 2) the long junction regime where the supercurrent is strongly suppressed because the junction becomes an insulator. In the latter case quantized Hall states form and Andreev scattering at the normal/superconducting interface will induce edge states. Our numerical calculation has become possible due to an extension of the Chebyshev Bogoliubov-de Gennes method to computations on video cards (GPUs).

preprint2010arXiv

Proximity induced pseudogap in mesoscopic superconductor/normal-metal bilayers

Recent scanning tunneling microscopy measurements of the proximity effect in Au/La$_{2-x}$Sr$_{x}$CuO$_{4}$ and La$_{1.55}$Sr$_{0.45}$CuO$_{4}$/La$_{2-x}$Sr$_{x}$CuO$_{4}$ bilayers showed a proximity-induced pseudogap [Yuli et al., Phys. Rev. Lett. {\bf 103}, 197003 (2009)]. We describe the proximity effect in mesoscopic superconductor/normal-metal bilayers by using the Bogoliubov-de Gennes equations for a tight-binding Hamiltonian with competing antiferromagnetic and d-wave superconductivity orders . The temperature dependent local density of states is calculated as a function of the distance from the interface. Bound state due to both d-wave and spin density wave gaps are formed in the normal metal for energies less than the respective gaps. If there is a mismatch between the Fermi velocities in the two layers we observe that these states will shift in energy when spin density wave order is present, thus inducing a minigap at finite energy. We conclude that the STM measurement in the proximity structures is able to distinguish between the two scenarios proposed for the pseudogap (competing or precursor to superconductivity).

preprint2009arXiv

Polaron formation in the presence of Rashba spin-orbit coupling: implications for spintronics

We study the effects of the Rashba spin-orbit coupling on the polaron formation, using a suitable generalization of the Momentum Average approximation. Contrary to previous investigations of this problem, we find that the spin-orbit interaction decreases the effective electron-phonon coupling. It is thus possible to lower the effective mass of the polaron by increasing the spin-orbit coupling. We also show that when the spin-orbit coupling is large as compared to the phonon energy, the polaron retains only one of the spin polarized bands in its coherent spectrum. This has major implications for the propagation of spin-polarized currents in such materials, and thus for spintronic applications.