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Luca Planat

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quant-ph cond-mat.mes-hall cond-mat.supr-con physics.ins-det

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preprint2022arXiv

An Haloscope Amplification Chain based on a Travelling Wave Parametric Amplifier

In this paper we will describe the characterisation of a rf detection chain based on a travelling wave parametric amplifier (TWPA). The detection chain is meant to be used for dark matter axion searches and thus it is mounted coupled to a high Q microwave resonant cavity. A system noise temperature $T_{\rm sys} = (3.3 \pm 0.1$) K has been measured at a frequency of 10.77 GHz, using a novel scheme allowing measurement of $T_{\rm sys} $ exactly at the cavity output port.

preprint2022arXiv

Observation of two-mode squeezing in a traveling wave parametric amplifier

Traveling wave parametric amplifiers (TWPAs) have recently emerged as essential tools for broadband near quantum-limited amplification. However, their use to generate microwave quantum states still misses an experimental demonstration. In this letter, we report operation of a TWPA as a source of two-mode squeezed microwave radiation. We demonstrate broadband entanglement generation between two modes separated by up to 400 MHz by measuring logarithmic negativity between 0.27 and 0.51 and collective quadrature squeezing below the vacuum limit between 1.5 and 2.1 dB. This work opens interesting perspectives for the exploration of novel microwave photonics experiments with possible applications in quantum sensing and continuous variable quantum computing.

preprint2019arXiv

A photonic crystal Josephson traveling wave parametric amplifier

An amplifier combining noise performances as close as possible to the quantum limit with large bandwidth and high saturation power is highly desirable for many solid state quantum technologies such as high fidelity qubit readout or high sensitivity electron spin resonance for example. Here we introduce a new Traveling Wave Parametric Amplifier based on Superconducting QUantum Interference Devices. It displays a 3 GHz bandwidth, a -102 dBm 1-dB compression point and added noise near the quantum limit. Compared to previous state-of-the-art, it is an order of magnitude more compact, its characteristic impedance is in-situ tunable and its fabrication process requires only two lithography steps. The key is the engineering of a gap in the dispersion relation of the transmission line. This is obtained using a periodic modulation of the SQUID size, similarly to what is done with photonic crystals. Moreover, we provide a new theoretical treatment to describe the non-trivial interplay between non-linearity and such periodicity. Our approach provides a path to co-integration with other quantum devices such as qubits given the low footprint and easy fabrication of our amplifier.

preprint2019arXiv

State preparation of a fluxonium qubit with feedback from a custom FPGA-based platform

We developed a versatile integrated control and readout instrument for experiments with superconducting quantum bits (qubits), based on a field-programmable gate array (FPGA) platform. Using this platform, we perform measurement-based, closed-loop feedback operations with $428 \, \mathrm{ns}$ platform latency. The feedback capability is instrumental in realizing active reset initialization of the qubit into the ground state in a time much shorter than its energy relaxation time $T_1$. We show experimental results demonstrating reset of a fluxonium qubit with $99.4\,\%$ fidelity, using a readout-and-drive pulse sequence approximately $1.5 \, \mathrm{μs}$ long. Compared to passive ground state initialization through thermalization, with the time constant given by $T_1 = ~ 80 \, \mathrm{μs}$, the use of the FPGA-based platform allows us to improve both the fidelity and the time of the qubit initialization by an order of magnitude.

preprint2016arXiv

Low-temperature quantum transport in CVD-grown single crystal graphene

Chemical vapor deposition (CVD) has been proposed for large-scale graphene synthesis for practical applications. However, the inferior electronic properties of CVD graphene are one of the key problems to be solved. In this study, we present a detailed study on the electronic properties of high-quality single crystal monolayer graphene. The graphene is grown by CVD on copper using a cold-wall reactor and then transferred to Si/SiO2. Our low-temperature magneto-transport data demonstrate that the characteristics of the measured single-crystal CVD graphene samples are superior to those of polycrystalline graphene and have a quality which is comparable to that of exfoliated graphene on Si/SiO2. The Dirac point in our best samples is located at back-gate voltages of less than 10V, and their mobility can reach 11000 cm2/Vs. More than 12 flat and discernible half-integer quantum Hall plateaus have been observed in high magnetic field on both the electron and hole side of the Dirac point. At low magnetic field, the magnetoresistance shows a clear weak localization peak. Using the theory of McCann et al., we find that the inelastic scattering length is larger than 1 μm in these samples even at the charge neutrality point.