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Researcher profile

Luca Basso

Luca Basso contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
quant-phcond-mat.mes-hallcond-mat.mtrl-sciphysics.app-phphysics.ins-det

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Published work

3 published item(s)

preprint2026arXiv

Homogeneous Microwave Delivery for Quantum Sensing with Nitrogen-Vacancy Centers at High Pressures

Nitrogen vacancy (NV) centers have been demonstrated as a useful tool in high pressure environments. However, the geometry and small working area of the diamond anvil cells (DACs) used to apply pressure present a challenge to effective delivery of microwave (mw) fields. We designed and characterized a novel slotted design for mw transmission to nitrogen-vacancy centers (NVs) in a diamond anvil cell via zero-field and in-field optically detected magnetic resonance (ODMR) measurements across pressures between 1 and 48 GPa. The mw fields experienced by NVs across the diamond culet was calculated from Rabi frequency and found to be higher and more uniform than those generated by an equivalent simple mw line, which will improve performance for wide-field, high-pressure measurements to probe spatial variations across samples under pressure.

0 citations0 reviewsNo code linkedOpen access
preprint2026arXiv

Landau Zener Interaction Enhanced Quantum Sensing in Spin Defects of Hexagonal Boron Nitride

Negatively charged boron vacancies (V$_{\text{B}}^{-}$) in hexagonal boron nitride (hBN) comprise a promising quantum sensing platform, optically addressable at room temperature and transferrable onto samples. However, broad hyperfine-split spin transitions of the ensemble pose challenges for quantum sensing with conventional resonant excitation due to limited spectral coverage. While isotopically enriched hBN using $^{10}$B and $^{15}$N isotopes (h$^{10}$B$^{15}$N) exhibits sharper spectral features, significant inhomogeneous broadening persists. We demonstrate that, implemented via frequency modulation on an FPGA, a frequency-ramped microwave pulse achieves around 4-fold greater $|0\rangle\rightarrow|-1\rangle$ spin-state population transfer and thus contrast than resonant microwave excitation and thus 16-fold shorter measurement time for spin relaxation based quantum sensing. Quantum dynamics simulations reveal that an effective two-state Landau-Zener model captures the complex relationship between population inversion and pulse length with relaxations incorporated. Our approach is robust and valuable for quantum relaxometry with spin defects in hBN in noisy environments.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Current Paths in an Atomic Precision Advanced Manufactured Device Imaged by Nitrogen-Vacancy Diamond Magnetic Microscopy

The recently-developed ability to control phosphorous-doping of silicon at an atomic level using scanning tunneling microscopy (STM), a technique known as atomic-precision-advanced-manufacturing (APAM), has allowed us to tailor electronic devices with atomic precision, and thus has emerged as a way to explore new possibilities in Si electronics. In these applications, critical questions include where current flow is actually occurring in or near APAM structures as well as whether leakage currents are present. In general, detection and mapping of current flow in APAM structures are valuable diagnostic tools to obtain reliable devices in digital-enhanced applications. In this paper, we performed nitrogen-vacancy (NV) wide-field magnetic imaging of stray magnetic fields from surface current densities flowing in an APAM test device over a mm-field of view with μm-resolution. To do this, we integrated a diamond having a surface NV ensemble with the device (patterned in two parallel mm-sized ribbons), then mapped the magnetic field from the DC current injected in the APAM device in a home-built NV wide-field microscope. The 2D magnetic field maps were used to reconstruct the surface current density, allowing us to obtain information on current paths, device failures such as choke points where current flow is impeded, and current leakages outside the APAM-defined P-doped regions. Analysis on the current density reconstructed map showed a projected sensitivity of ~0.03 A/m, corresponding to a smallest detectable current in the 200 μm-wide APAM ribbon of ~6 μA. These results demonstrate the failure analysis capability of NV wide-field magnetometry for APAM materials, opening the possibility to investigate other cutting-edge microelectronic devices.

0 citations0 reviewsNo code linkedOpen access