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Louis Veyrat

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Published work

5 published item(s)

preprint2024arXiv

Dissipationless transport signature of topological nodal lines

Topological materials, such as topological insulators or semimetals, usually not only reveal the nontrivial properties of their electronic wavefunctions through the appearance of stable boundary modes, but also through very specific electromagnetic responses. The anisotropic longitudinal magnetoresistance of Weyl semimetals, for instance, carries the signature of the chiral anomaly of Weyl fermions. However for topological nodal line semimetals -- materials where the valence and conduction bands cross each other on one-dimensional curves in the three-dimensional Brillouin zone -- such a characteristic has been lacking. Here we report the discovery of a peculiar charge transport effect generated by topological nodal lines: a dissipationless transverse signal in the presence of coplanar electric and magnetic fields, which originates from a Zeeman-induced conversion of topological nodal lines into Weyl nodes under infinitesimally small magnetic fields. We evidence this dissipationless topological response in trigonal \ce{PtBi2} persisting up to room temperature, and unveil the extensive topological nodal lines in the band structure of this non-magnetic material. These findings provide a new pathway to engineer Weyl nodes by arbitrary small magnetic fields and reveal that bulk topological nodal lines can exhibit non-dissipative transport properties.

preprint2022arXiv

Crystal Growth, Exfoliation and Magnetic Properties of Quaternary Quasi-Two-Dimensional CuCrP$_2$S$_6$

We report optimized crystal growth conditions for the quaternary compound CuCrP$_2$S$_6$ by chemical vapor transport. Compositional and structural characterization of the obtained crystals were carried out by means of energy-dispersive X-ray spectroscopy and powder X-ray diffraction. CuCrP$_2$S$_6$ is structurally closely related to the $M_2$P$_2$S$_6$ family ($M$: transition metal), which contains several compounds that are under investigation as 2D magnets. As-grown crystals exhibit a plate-like, layered morphology as well as a hexagonal habitus. We present successful exfoliation of such as-grown crystals down to thicknesses of 2.8 nm corresponding to 4 layers. CuCrP$_2$S$_6$ crystallizes in the monoclinic space group $C2/c$. Magnetization measurements reveal an antiferromagnetic ground state with $T_\textrm{N} \approx 30$ K and a positive Curie-Weiss temperature in agreement with dominant ferromagnetic intralayer coupling. Specific heat measurements confirm this magnetic phase transition and the magnetic order is suppressed in an external magnetic field of about 6 T (8 T) applied parallel (perpendicular) to the $ab$ plane. At higher temperatures between 140-200 K additional broad anomalies associated with structural changes accompanying antiferroelectric ordering are detected in our specific heat studies.

preprint2019arXiv

Helical quantum Hall phase in graphene on SrTiO$_3$

The ground state of charge neutral graphene under perpendicular magnetic field was predicted to be a quantum Hall topological insulator with a ferromagnetic order and spin-filtered, helical edge channels. In most experiments, however, an otherwise insulating state is observed and is accounted for by lattice-scale interactions that promote a broken-symmetry state with gapped bulk and edge excitations. We tuned the ground state of the graphene zeroth Landau level to the topological phase via a suitable screening of the Coulomb interaction with a SrTiO$_3$ high-$k$ dielectric substrate. We observed robust helical edge transport emerging at a magnetic field as low as 1 tesla and withstanding temperatures up to 110 kelvins over micron-long distances. This new and versatile graphene platform opens new avenues for spintronics and topological quantum computation.

preprint2015arXiv

Band bending inversion in Bi$_2$Se$_3$ nanostructures

Shubnikov-de-Haas oscillations were studied under high magnetic field in Bi$_2$Se$_3$ nanostructures grown by Chemical Vapor Transport, for different bulk carrier densities ranging from $3\times10^{19}\text{cm}^{-3}$ to $6\times10^{17}\text{cm}^{-3}$. The contribution of topological surface states to electrical transport can be identified and separated from bulk carriers and massive two-dimensional electron gas. Band bending is investigated, and a crossover from upward to downward band bending is found at low bulk density, as a result of a competition between bulk and interface doping. These results highlight the need to control electrical doping both in the bulk and at interfaces in order to study only topological surface states.