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Researcher profile

Lizhong Li

Lizhong Li contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el

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Published work

3 published item(s)

preprint2022arXiv

Realization of the Haldane Chern insulator in a moiré lattice

The Chern insulator displays a quantized Hall effect without Landau levels. In a landmark paper in 1988, Haldane showed that a Chern insulator could be realized through complex next-nearest-neighbor hopping in a honeycomb lattice. Despite its profound impact on the field of topological physics and recent implementation in cold-atom experiments, the Haldane model has remained elusive in solid-state materials. Here, we report the experimental realization of a Haldane Chern insulator in AB-stacked MoTe2/WSe2 moiré bilayers, which form a honeycomb moiré lattice with two sublattices residing in different layers. We show that the moiré bilayer filled with two charge particles per unit cell is a quantum spin Hall (QSH) insulator with a tunable charge gap. Under a small out-of-plane magnetic field, it becomes a Chern insulator with Chern number c=1 from magneto-transport studies. The results are qualitatively captured by a generalized Kane-Mele tight-binding Hamiltonian. The Zeeman field splits the QSH insulator into two halves of opposite valley--one with a positive and the other a negative moiré band gap. Our study highlights the unique potential of semiconductor moiré materials in engineering topological lattice Hamiltonians.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Valley-coherent quantum anomalous Hall state in AB-stacked MoTe2/WSe2 bilayers

Moiré materials provide fertile ground for the correlated and topological quantum phenomena. Among them, the quantum anomalous Hall (QAH) effect, in which the Hall resistance is quantized even under zero magnetic field, is a direct manifestation of the intrinsic topological properties of a material and an appealing attribute for low-power electronics applications. The QAH effect has been observed in both graphene and transition metal dichalcogenide (TMD) moiré materials. It is thought to arise from the interaction-driven valley polarization of the narrow moiré bands. Here, we show surprisingly that the newly discovered QAH state in AB-stacked MoTe2/WSe2 moiré bilayers is not valley-polarized but valley-coherent. The layer- and helicity-resolved optical spectroscopy measurement reveals that the QAH ground state possesses spontaneous spin (valley) polarization aligned (anti-aligned) in two TMD layers. In addition, saturation of the out-of-plane spin polarization in both layers occurs only under high magnetic fields, supporting a canted spin texture. Our results call for a new mechanism for the QAH effect and highlight the potential of TMD moiré materials with strong electronic correlations and spin-orbit interactions for exotic topological states.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Gate-tunable spin waves in antiferromagnetic atomic bilayers

The emergence of two-dimensional (2D) layered magnetic materials has opened an exciting playground for both fundamental studies of magnetism in 2D and explorations of spinbased applications. Remarkable properties, including spin filtering in magnetic tunnel junctions and gate control of magnetic states, have recently been demonstrated in 2D magnetic materials. While these studies focus on the static properties, dynamic magnetic properties such as excitation and control of spin waves have remained elusive. Here we excite spin waves and probe their dynamics in antiferromagnetic CrI3 bilayers by employing an ultrafast optical pump/magneto-optical Kerr probe technique. We identify sub-terahertz magnetic resonances under an in-plane magnetic field, from which we determine the anisotropy and interlayer exchange fields and the spin damping rates. We further show tuning of antiferromagnetic resonances by tens of gigahertz through electrostatic gating. Our results shed light on magnetic excitations and spin dynamics in 2D magnetic materials, and demonstrate their unique potential for applications in ultrafast data storage and processing.

0 citations0 reviewsNo code linkedOpen access