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Researcher profile

Linyou Cao

Linyou Cao contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciphysics.app-phphysics.optics

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Published work

2 published item(s)

preprint2020arXiv

Exciton Mott Transition in Two-Dimensional Semiconductors

Exciton many-body interaction bear great implication for application in advanced photonic devices and quantum science and technology such as quantum computing, but the fundamental understanding about exciton many-body interaction is very limited. Here we provide numerous new insights into the fundamentals of exciton Mott transition (EMT), a manifestation of exciton many-body interaction evidenced by the ionization of excitons into a plasma of unbound electrons and holes, i.e. electron-hole plasma (EHP), by taking advantage of the unique properties of two-dimensional (2D) semiconductors like monolayer MoS2. We clarify long-standing controversies on the continuousness and criteria of EMT, quantify the charge carrier distribution among the co-existing exciton and EHP phases, establish correlation between the emission features and charge densities of EHP, and elucidate the physical state of EHP charge carriers as nanoscale electron-hole complex rather than individually free charges. These results lay down a foundation for furthering the studies of exciton many-body interaction and also for utilizing the interaction in quantum science/technology and the development of advanced optoelectronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Low-loss composite photonic platform based on 2D semiconductor monolayers

Two dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are promising for optical modulation, detection, and light emission since their material properties can be tuned on-demand via electrostatic doping. The optical properties of TMDs have been shown to change drastically with doping in the wavelength range near the excitonic resonances. However, little is known about the effect of doping on the optical properties of TMDs away from these resonances, where the material is transparent and therefore could be leveraged in photonic circuits. Here, we probe the electro-optic response of monolayer TMDs at near infrared (NIR) wavelengths (i.e. deep in the transparency regime), by integrating them on silicon nitride (SiN) photonic structures to induce strong light$-$matter interaction with the monolayer. We dope the monolayer to carrier densities of ($7.2 \pm 0.8$) $\times$ $10^{13} \textrm{cm}^{-2}$, by electrically gating the TMD using an ionic liquid. We show strong electro-refractive response in monolayer tungsten disulphide (WS$_2$) at NIR wavelengths by measuring a large change in the real part of refractive index $Δ$n = $0.53$, with only a minimal change in the imaginary part $Δ$k = $0.004$. The doping induced phase change ($Δ$n), compared to the induced absorption ($Δ$k) measured for WS$_2$ ($Δ$n/$Δ$k $\sim 125$), a key metric for photonics, is an order of magnitude higher than the $Δ$n/$Δ$k for bulk materials like silicon ($Δ$n/$Δ$k $\sim 10$), making it ideal for various photonic applications. We further utilize this strong tunable effect to demonstrate an electrostatically gated SiN-WS$_2$ phase modulator using a WS$_2$-HfO$_2$ (Hafnia)-ITO (Indium Tin Oxide) capacitive configuration, that achieves a phase modulation efficiency (V$_π$L) of 0.8 V $\cdot$ cm with a RC limited bandwidth of 0.3 GHz.

0 citations0 reviewsNo code linkedOpen access