Source author record

Linyou Cao

Linyou Cao appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

13works
4topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

13 published item(s)

preprint2020arXiv

Exciton Mott Transition in Two-Dimensional Semiconductors

Exciton many-body interaction bear great implication for application in advanced photonic devices and quantum science and technology such as quantum computing, but the fundamental understanding about exciton many-body interaction is very limited. Here we provide numerous new insights into the fundamentals of exciton Mott transition (EMT), a manifestation of exciton many-body interaction evidenced by the ionization of excitons into a plasma of unbound electrons and holes, i.e. electron-hole plasma (EHP), by taking advantage of the unique properties of two-dimensional (2D) semiconductors like monolayer MoS2. We clarify long-standing controversies on the continuousness and criteria of EMT, quantify the charge carrier distribution among the co-existing exciton and EHP phases, establish correlation between the emission features and charge densities of EHP, and elucidate the physical state of EHP charge carriers as nanoscale electron-hole complex rather than individually free charges. These results lay down a foundation for furthering the studies of exciton many-body interaction and also for utilizing the interaction in quantum science/technology and the development of advanced optoelectronic devices.

preprint2019arXiv

Low-loss composite photonic platform based on 2D semiconductor monolayers

Two dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are promising for optical modulation, detection, and light emission since their material properties can be tuned on-demand via electrostatic doping. The optical properties of TMDs have been shown to change drastically with doping in the wavelength range near the excitonic resonances. However, little is known about the effect of doping on the optical properties of TMDs away from these resonances, where the material is transparent and therefore could be leveraged in photonic circuits. Here, we probe the electro-optic response of monolayer TMDs at near infrared (NIR) wavelengths (i.e. deep in the transparency regime), by integrating them on silicon nitride (SiN) photonic structures to induce strong light$-$matter interaction with the monolayer. We dope the monolayer to carrier densities of ($7.2 \pm 0.8$) $\times$ $10^{13} \textrm{cm}^{-2}$, by electrically gating the TMD using an ionic liquid. We show strong electro-refractive response in monolayer tungsten disulphide (WS$_2$) at NIR wavelengths by measuring a large change in the real part of refractive index $Δ$n = $0.53$, with only a minimal change in the imaginary part $Δ$k = $0.004$. The doping induced phase change ($Δ$n), compared to the induced absorption ($Δ$k) measured for WS$_2$ ($Δ$n/$Δ$k $\sim 125$), a key metric for photonics, is an order of magnitude higher than the $Δ$n/$Δ$k for bulk materials like silicon ($Δ$n/$Δ$k $\sim 10$), making it ideal for various photonic applications. We further utilize this strong tunable effect to demonstrate an electrostatically gated SiN-WS$_2$ phase modulator using a WS$_2$-HfO$_2$ (Hafnia)-ITO (Indium Tin Oxide) capacitive configuration, that achieves a phase modulation efficiency (V$_π$L) of 0.8 V $\cdot$ cm with a RC limited bandwidth of 0.3 GHz.

preprint2016arXiv

Fundamental Limits of Exciton-Exciton Annihilation for Light Emission in Transition Metal Dichalcogenide Monolayers

We quantitatively illustrate the fundamental limit that exciton-exciton annihilation (EEA) may impose to the light emission of monolayer transition metal dichalcogenide (TMDC) materials. The EEA in TMDC monolayers shows dependence on the interaction with substrates as its rate increases from 0.1 cm2/s (0.05 cm2/s) to 0.3 cm2/s (0.1 cm2/s) with the substrates removed for WS2 (MoS2) monolayers. It turns to be the major pathway of exciton decay and dominates the luminescence efficiency when the exciton density is beyond 1010 cm-2 in suspended monolayers or 1011 cm-2 in supported monolayers. This sets an upper limit on the density of injected charges in light emission devices for the realization of optimal luminescence efficiency. The strong EEA rate also dictates the pumping threshold for population inversion in the monolayers to be 12-18 MW/cm2 (optically) or 2.5-4x105 A/cm2 (electrically).

preprint2016arXiv

Ultrathin Semiconductor Perfect Light Absorbers with High Spectral, Polarization, and Angle Selectivity for Arbitrary Wavelengths

Enabling perfect light absorption in ultrathin materials promises the development of exotic photonic devices. Here we demonstrate new strategies that can provide capabilities to rationally design ultrathin (thickness < λ/10~λ/5) semiconductor perfect absorbers for arbitrary wavelengths, including those at which the intrinsic absorption of the semiconductor is weak, e.g. Si for near-IR wavelengths. This is in stark contrast with the existing studies on ultrathin perfect absorbers, which have focused on metallic materials or highly-absorptive semiconductors. Our design strategies are built upon an intuitive model, coupled leaky mode theory that we recently developed and can turn the design for perfect absorbers to the design for leaky modes. The designed absorber is featured with extraordinary absorption enhancement, miniaturized dimension, and high selectivity for the wavelength, polarization, and angle of incident light. It can enable the development of flexible, light-weight, high-performance, cost-effective, and multifunctional optoelectronic devices that are difficult with current light absorbers.

preprint2015arXiv

Efficient Interlayer Relaxation and Transition of Excitons in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures

Semiconductor heterostructures provide a powerful platform for the engineering of excitons. Here we report the excitonic properties of two-dimensional (2D) heterostructures that consist of monolayer MoS2 and WS2 stacked epitaxially or non-epitaxially in the vertical direction. We find similarly efficient interlayer relaxation and transition of excitons in both the epitaxial and nonepitaxial heterostructures. This is manifested by a two orders of magnitude decrease in the photoluminescence and the appearance of an extra absorption peak at low energy region. The MoS2/WS2 heterostructures show weak interlayer coupling and can essentially act as atomicscale heterojunctions with the intrinsic bandstructures of the two monolayers largely preserved. They are particularly promising for the applications that request efficient dissociation of excitons and strong light absorption, including photovoltaics, solar fuels, photodetectors, and optical modulators. Our results also indicate that 2D heterostructures promise unprecedented capabilities to engineer excitons from the atomic level without concerns of interfacial imperfection.

preprint2015arXiv

Exciton-dominated Dielectric Function of Atomically Thin MoS2 Films

We systematically measure the dielectric function of atomically thin MoS2 films with different layer numbers and demonstrate that excitonic effects play a dominant role in the dielectric function when the films are less than 5-7 layers thick. The dielectric function shows an anomalous dependence on the layer number. It decreases with the layer number increasing when the films are less than 5-7 layers thick but turns to increase with the layer number for thicker films. We show that this is because the excitonic effect is very strong in the thin MoS2 films and its contribution to the dielectric function may dominate over the contribution of the band structure. We also extract the value of layer-dependent exciton binding energy and Bohr radius in the films by fitting the experimental results with an intuitive model. The dominance of excitonic effects is in stark contrast with what reported at conventional materials whose dielectric functions are usually dictated by band structures. The knowledge of the dielectric function may enable capabilities to engineer the light-matter interactions of atomically thin MoS2 films for the development of novel photonic devices, such as metamaterials, waveguides, light absorbers, and light emitters.

preprint2014arXiv

Temperature Dependent Valley Relaxation Dynamics in Single Layer WS2 Measured Using Ultrafast Spectroscopy

We measured the lifetime of optically created valley polarization in single layer WS2 using transient absorption spectroscopy. The electron valley relaxation is very short (< 1ps). However the hole valley lifetime is at least two orders of magnitude longer and exhibits a temperature dependence that cannot be explained by single carrier spin/valley relaxation mechanisms. Our theoretical analysis suggests that a collective contribution of two potential processes may explain the valley relaxation in single layer WS2. One process involves direct scattering of excitons from K to K' valleys with a spin flip-flop interaction. The other mechanism involves scattering through spin degenerate Gamma valley. This second process is thermally activated with an Arrhenius behavior due to the energy barrier between Gamma and K valleys.

preprint2013arXiv

General modal properties of optical resonances in subwavelength nonspherical dielectric structures

Subwavelength dielectric structures offer an attractive low loss alternative to plasmonic structures for the development of resonant optics functionality such as metamaterials. Nonspherical like rectangular structures are of most interest from the standpoint of device development due to fabrication convenience. However, no intuitive fundamental understanding of optical resonance in nonspherical structures is available, which has substantially delayed the device development with dielectric materials. Here we elucidate the general fundamentals of optical resonances in nonspherical subwavelength dielectric structures of different shapes (rectangular or triangular) and dimensionalities (1D nanowires and 0D nanoparticles). We demonstrate that the optical properties (i.e. light absorption) of nonspherical structures are dictated by the eigenvalue of the structure's leaky modes. Leaky modes are defined as natural optical modes with propagating waves outside the structure. We also elucidate the dependence of the eigenvalue on physical features of the structures. The eigenvalue shows scaling invariance with the overall size, weakly relies on the refractive index, but linearly depends on the size ratio of different sizes of the structure. We propose a modified Fabry-Perot model to account for this linear dependence. Knowledge of the dominant role of leaky modes and the dependence of leaky mode on physical features can serve as a powerful guide for the rational design of devices with desired optical resonances. It opens up a pathway to design devices with functionality that has not been explored due to lack of intuitive understanding, for instance, imaging devices able to sense incident angle, or superabsorbing photodetectors.

preprint2013arXiv

Layer-dependent Electrocatalysis of MoS2 for Hydrogen Evolution

The quantitative correlation of the catalytic activity with microscopic structure of heterogeneous catalysts is a major challenge for the field of catalysis science. It requests synergistic capabilities to tailor the structure with atomic scale precision and to control the catalytic reaction to proceed through well-defined pathways. Here we leverage on the controlled growth of MoS2 atomically thin films to demonstrate that the catalytic activity of MoS2 for the hydrogen evolution reaction decreases by a factor of ~4.47 for the addition of every one more layer. Similar layer dependence is also found in edge-riched MoS2 pyramid platelets. This layer-dependent electrocatalysis can be correlated to the hopping of electrons in the vertical direction of MoS2 layers over an interlayer potential barrier, which is found to be 0.119V and consistent with theoretical calculations. Our results point out that increasing the hopping efficiency of electrons in the vertical direction is a key for the development of high-efficiency two-dimensional material catalysts.

preprint2013arXiv

Leaky Mode Engineering: A General Design Principle for Dielectric Optical Antenna Solar Absorbers

We present a general principle for the rational design of dielectric optical antennas with optimal solar absorption enhancement: leaky mode engineering. This builds upon our previous study that demonstrates the solar absorption of a material with a given volume only dependent on the density and the radiative loss of leaky modes of the material. Here we systematically examine the correlation among the modal properties (density and radiative loss) of leaky modes, physical features, and solar absorption of dielectric antenna structures. Our analysis clearly points out the general guidelineS for the design of dielectric optical antennas with optimal solar absorption enhancement: a) using 0D structures; b) the shape does not matter much; c) heterostructuring with non-absorbing materials is a promising strategy; d) the design of a large-scale nanostructure array can use the solar absorption of single nanostructures as a reasonable reference.

preprint2013arXiv

Non-equilibrium Thermal Super-radiation of Real Materials

We elucidate the theoretically maximal thermal radiation power from real materials at a given temperature. Our results demonstrate that the thermal radiation from real materials may be larger than the blackbody emission in free space,and indicate that this is rooted in the high refractive index of the materials. The refractive index contrast between the materials and environment dictates the radiation of real materials genetically not under thermodynamic equilibrium, but on the other hand can give rise to a larger density of photonic modes than that of the blackbody. One key to maximize the thermal radiation is to minimize the impedance mismatch of the materials with environment. By following this principle, we present a design of a carbon core coated by a four-layer transparent shell with gradually changed refractive indexes that can emit > 30 times more power than the blackbody, which reasonably approaches the predicted radiation maximum.

preprint2013arXiv

Semiconductor solar superabsorber

Understanding the maximal enhancement of solar absorption in semiconductor materials by light trapping promises the development of affordable solar cells. However, the conventional Lambertian limit is only valid for idealized material systems with weak absorption, and cannot hold for the typical semiconductor materials used in solar cells due to the substantial absorption of these materials. Herein we theoretically demonstrate the maximal solar absorption enhancement for semiconductor materials and elucidate the general design principle for light trapping structures to approach the theoretical maximum. By following the principles, we design a practical light trapping structure that can enable an ultrathin layer of semiconductor materials,for instance, 10 nm thick a-Si, absorb > 90% sunlight above the bandgap. The design has active materials with one order of magnitude less volume than any of the existing solar light trapping designs in literature. This work points towards the development of ultimate solar light trapping techniques.

preprint2013arXiv

Solar Superabsorption of Semiconductor Materials

We theoretically demonstrate the fundamental limit in volume for given materials (e.g. Si, a-Si, CdTe) to fully absorb the solar radiation above bandgap, which we refer as solar superabsorption limit. We also point out the general principles for experimentally designing light trapping structures to approach the superabsorption. This study builds upon an intuitive model, coupled leaky mode theory (CLMT), for the analysis of light absorption in nanostructures. The CLMT provides a useful variable transformation. Unlike the existing methods that rely on information of physical features (e.g. morphology, dimensionality) to analyze light absorption, the CLMT can evaluate light absorption in given materials with only two variables, the radiative loss and the resonant wavelength, of leaky modes, regardless the physical features of the materials. This transformation allows for surveying the entire variable space to find out the solar superabsorption and provides physical insights to guide the design of solar superabsorbing structures.