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Kenan Gundogdu

Kenan Gundogdu contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2022arXiv

Quantum Analog of Vibration Isolation: From Room Temperature Superfluorescence to High Temperature Superconductivity

The development and the use of quantum technologies are hindered by a fundamental challenge: Quantum materials exhibit macroscopic quantum properties at extremely low temperatures due to the loss of quantum coherence at elevated temperatures. Here, based on our recent discovery of room temperature superfluorescence in perovskites, we present the Quantum Analog of Vibration Isolation, 'QAVI', model and explain how it protects the quantum phase against dephasing at high temperatures. We then postulate the requirements for observation of macroscopic quantum phenomena at practical temperatures and propose a unified model for all macroscopic quantum phase transitions. We further present the general features of the temperature and density phase diagram of macroscopic quantum phase transitions that are mediated by the QAVI process and identify the similarities observed in the phase diagram of high Tc superconductors. Understanding this fundamental quantum coherence protection mechanism is imperative to accelerate the discovery of high temperature macroscopic quantum phenomena, and offers significant potential for developing quantum technologies functioning under practical conditions.

preprint2016arXiv

Fundamental Limits of Exciton-Exciton Annihilation for Light Emission in Transition Metal Dichalcogenide Monolayers

We quantitatively illustrate the fundamental limit that exciton-exciton annihilation (EEA) may impose to the light emission of monolayer transition metal dichalcogenide (TMDC) materials. The EEA in TMDC monolayers shows dependence on the interaction with substrates as its rate increases from 0.1 cm2/s (0.05 cm2/s) to 0.3 cm2/s (0.1 cm2/s) with the substrates removed for WS2 (MoS2) monolayers. It turns to be the major pathway of exciton decay and dominates the luminescence efficiency when the exciton density is beyond 1010 cm-2 in suspended monolayers or 1011 cm-2 in supported monolayers. This sets an upper limit on the density of injected charges in light emission devices for the realization of optimal luminescence efficiency. The strong EEA rate also dictates the pumping threshold for population inversion in the monolayers to be 12-18 MW/cm2 (optically) or 2.5-4x105 A/cm2 (electrically).

preprint2014arXiv

Temperature Dependent Valley Relaxation Dynamics in Single Layer WS2 Measured Using Ultrafast Spectroscopy

We measured the lifetime of optically created valley polarization in single layer WS2 using transient absorption spectroscopy. The electron valley relaxation is very short (< 1ps). However the hole valley lifetime is at least two orders of magnitude longer and exhibits a temperature dependence that cannot be explained by single carrier spin/valley relaxation mechanisms. Our theoretical analysis suggests that a collective contribution of two potential processes may explain the valley relaxation in single layer WS2. One process involves direct scattering of excitons from K to K&#39; valleys with a spin flip-flop interaction. The other mechanism involves scattering through spin degenerate Gamma valley. This second process is thermally activated with an Arrhenius behavior due to the energy barrier between Gamma and K valleys.

preprint2010arXiv

Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping

It is known that a higher concentration of free carriers leads to a higher oxide growth rate in the thermal oxidation of silicon. However, the role of electrons and holes in oxidation chemistry is not clear. Here, we report real-time second-harmonic-generation data on the oxidation of H-terminated (111)Si that reveal that high concentrations of electrons increase the chemical reactivity of the outer-layer Si-Si back bonds relative to the Si-H up bonds. However, the thicknesses of the natural oxides of all samples stabilize near 1 nm at room temperature, regardless of the chemical kinetics of the different bonds.