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Researcher profile

Lingfeng M. Zhang

Lingfeng M. Zhang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallphysics.optics

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Published work

3 published item(s)

preprint2011arXiv

Infrared nanoscopy of Dirac plasmons at the graphene-SiO2 interface

We report on infrared (IR) nanoscopy of 2D plasmon excitations of Dirac fermions in graphene. This is achieved by confining mid-IR radiation at the apex of a nanoscale tip: an approach yielding two orders of magnitude increase in the value of in-plane component of incident wavevector q compared to free space propagation. At these high wavevectors, the Dirac plasmon is found to dramatically enhance the near-field interaction with mid-IR surface phonons of SiO2 substrate. Our data augmented by detailed modeling establish graphene as a new medium supporting plasmonic effects that can be controlled by gate voltage.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Near-field spectroscopy of silicon dioxide thin films

We analyze the results of scanning near-field infrared spectroscopy performed on thin films of a-SiO2 on Si substrate. The measured near-field signal exhibits surface-phonon resonances whose strength has a strong thickness dependence in the range from 2 to 300 {nm}. These observations are compared with calculations in which the tip of the near-field infrared spectrometer is modeled either as a point dipole or an elongated spheroid. The latter model accounts for the antenna effect of the tip and gives a better agreement with the experiment. Possible applications of the near-field technique for depth profiling of layered nanostructures are discussed.

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preprint2006arXiv

Scanned gate microscopy of a one-dimensional quantum dot

We analyze electrostatic interaction between a sharp conducting tip and a thin one-dimensional wire, e.g., a carbon nanotube, in a scanned gate microscopy (SGM) experiment. The problem is analytically tractable if the wire resides on a thin dielectric substrate above a metallic backgate. The characteristic spatial scale of the electrostatic coupling to the tip is equal to its height above the substrate. Numerical simulations indicate that imaging of individual electrons by SGM is possible once the mean electron separation exceeds this scale (typically, a few tens of nm). Differences between weakly and strongly invasive SGM regimes are pointed out.

0 citations0 reviewsNo code linkedOpen access