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Researcher profile

Dimitri N. Basov

Dimitri N. Basov contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.str-elcond-mat.mtrl-sciphysics.optics

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Published work

5 published item(s)

preprint2011arXiv

Current oscillations in Vanadium Dioxide: evidence for electrically triggered percolation avalanches

In this work, we experimentally and theoretically explore voltage controlled oscillations occurring in micro-beams of vanadium dioxide. These oscillations are a result of the reversible insulator to metal phase transition in vanadium dioxide. Examining the structure of the observed oscillations in detail, we propose a modified percolative-avalanche model which allows for voltage-triggering. This model captures the periodicity and waveshape of the oscillations as well as several other key features. Importantly, our modeling shows that while temperature plays a critical role in the vanadium dioxide phase transition, electrically induced heating cannot act as the primary instigator of the oscillations in this configuration. This realization leads us to identify electric field as the most likely candidate for driving the phase transition.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Electrodynamics of Correlated Electron Materials

We review studies of the electromagnetic response of various classes of correlated electron materials including transition metal oxides, organic and molecular conductors, intermetallic compounds with $d$- and $f$-electrons as well as magnetic semiconductors. Optical inquiry into correlations in all these diverse systems is enabled by experimental access to the fundamental characteristics of an ensemble of electrons including their self-energy and kinetic energy. Steady-state spectroscopy carried out over a broad range of frequencies from microwaves to UV light and fast optics time-resolved techniques provide complimentary prospectives on correlations. Because the theoretical understanding of strong correlations is still evolving, the review is focused on the analysis of the universal trends that are emerging out of a large body of experimental data augmented where possible with insights from numerical studies.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Infrared nanoscopy of Dirac plasmons at the graphene-SiO2 interface

We report on infrared (IR) nanoscopy of 2D plasmon excitations of Dirac fermions in graphene. This is achieved by confining mid-IR radiation at the apex of a nanoscale tip: an approach yielding two orders of magnitude increase in the value of in-plane component of incident wavevector q compared to free space propagation. At these high wavevectors, the Dirac plasmon is found to dramatically enhance the near-field interaction with mid-IR surface phonons of SiO2 substrate. Our data augmented by detailed modeling establish graphene as a new medium supporting plasmonic effects that can be controlled by gate voltage.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Infrared signatures of high carrier densities induced in semiconducting poly(3-hexylthiophene) by fluorinated organosilane molecules

We report on infrared (IR) absorption and dc electrical measurements of thin films of poly(3-hexylthiophene) (P3HT) that have been modified by a fluoroalkyl trichlorosilane (FTS). Spectra for FTS-treated films were compared to data for electrostatically-doped P3HT in an organic field-effect transistor (OFET). The appearance of a prominent polaron band in mid-IR absorption data for FTS-treated P3HT supports the assertion of hole doping via a charge-transfer process between FTS molecules and P3HT. In highly-doped films with a significantly enhanced polaron band, we find a monotonic Drude-like absorption in the far-IR, signifying delocalized states. Utilizing a simple capacitor model of an OFET, we extracted a carrier density for FTS-treated P3HT from the spectroscopic data. With carrier densities reaching 10$^{14}$ holes/cm$^2$, our results demonstrate that FTS doping provides a unique way to study the metal-insulator transition in polythiophenes.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Near-field spectroscopy of silicon dioxide thin films

We analyze the results of scanning near-field infrared spectroscopy performed on thin films of a-SiO2 on Si substrate. The measured near-field signal exhibits surface-phonon resonances whose strength has a strong thickness dependence in the range from 2 to 300 {nm}. These observations are compared with calculations in which the tip of the near-field infrared spectrometer is modeled either as a point dipole or an elongated spheroid. The latter model accounts for the antenna effect of the tip and gives a better agreement with the experiment. Possible applications of the near-field technique for depth profiling of layered nanostructures are discussed.

0 citations0 reviewsNo code linkedOpen access