Researcher profile

Lina Sang

Lina Sang contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2020arXiv

Spin gapless semiconductors

Spin gapless semiconductors (SGSs) are a new class of zero gap materials which have a fully spin polarised electrons and holes. They bridge zero gap materials and half-metals. The band structures of the SGSs can have two types of energy dispersions: Dirac linear dispersion and parabolic dispersion. The Dirac type SGSs exhibit fully spin polarized Dirac cones, and offer a platform for massless and fully spin polarized spintronics as well as dissipationless edge state via quantum anomalous Hall effect. Due to its fascinating spin and charge states, they hold great potential application in spintronics. There have been tremendous efforts worldwide on searching for suitable candidates of SGSs. In particularly, there is an increasing interest in searching for Dirac type SGSs. In the past decade, a large number of Dirac or parabolic type SGSs have been predicted by density functional theory and some of parabolic SGSs have been experimentally demonstrated. The SGSs hold great potential for high speed and low-energy consumption spintronics, electronics and optoelectronics. Here, we review both Dirac and parabolic types of SGSs in different materials systems and outline the concepts of SGSs, novel spin and charge states, and potential applications of SGSs in next generation spintronic devices.

preprint2020arXiv

Type-II Superconductivity below 4K in Sn0.4Sb0.6

In this article, we report the occurrence of superconductivity in Sn0.4Sb0.6 single crystal at below 4K. Rietveld refined Powder XRD data confirms the phase purity of as grown crystal, crystallizing in rhombohedral R-3m space group with an elongated (2xc) unit cell in c-direction. Scanning Electron Microscope (SEM) image and EDAX measurement confirm the laminar growth and near to desired stoichiometry ratio. Raman Spectroscopy data shows the vibrational modes of Sn-Sb and Sb-Sb modes at 110 and 135cm-1. ZFC (Zero-Field-Cooled) magnetization measurements done at 10Oe showed sharp superconducting transitions at 4K along with a minor step at 3.5K. On the other hand, Paramagnetic Meissner Effect (PME) is observed in FC measurements. Magnetization vs applied field (M-H) plots at 2, 2.2, 2.5, 2.7, 3, 3.2, 3.5, and 3.7K shows typical Type-II nature of observed superconductivity with lower and upper critical fields (Hc1 and Hc2) at 69.42Oe and 630Oe respectively at 2K. Type-II superconductivity is also confirmed by calculated Ginzburg-Landau Kappa parameter value of 3.55. Characteristics length viz. coherence length and penetration depth are also calculated. Weak granular coupling is observed from R-T plot, in which resistance is not dropping to zero down to 2K.

preprint2020arXiv

Weak localization and anti-localization in rare earth doped topological insulators

We study magneto-transport phenomena in two rare-earth doped topological insulators, SmxFexSb2-2xTe3 and SmxBi2-xTe2Se single crystals. The magneto-transport behaviours in both compounds exhibit a systematic crossover between weak anti-localization (positive magnetoresistance) and weak localization (negative magnetoresistance) with changes in temperatures and magnetic fields. The weak localization is caused by rare-earth-doping induced magnetization, and the weak anti-localization originates from topologically protected surface states. The transition between weak localization and weak anti-localization demonstrates a gap opening at the Dirac point of surface states in the quantum diffusive regime. This work demonstrates an effective way to manipulate the magneto-transport properties of the topological insulators by rare-earth element doping. Magnetometry measurements indicate that the Sm-dopant alone is paramagnetic, whereas the co-doped Fe-Sm state has short-range antiferromagnetic order. Our results hold potential for the realization of exotic topological effects in gapped topological insulator surface states.