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Lianping Hou

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Published work

2 published item(s)

preprint2022arXiv

Hardware-algorithm collaborative computing with photonic spiking neuron chip based on integrated Fabry-Pérot laser with saturable absorber

Photonic neuromorphic computing has emerged as a promising avenue toward building a low-latency and energy-efficient non-von-Neuman computing system. Photonic spiking neural network (PSNN) exploits brain-like spatiotemporal processing to realize high-performance neuromorphic computing. However, the nonlinear computation of PSNN remains a significant challenging. Here, we proposed and fabricated a photonic spiking neuron chip based on an integrated Fabry-Pérot laser with a saturable absorber (FP-SA) for the first time. The nonlinear neuron-like dynamics including temporal integration, threshold and spike generation, refractory period, and cascadability were experimentally demonstrated, which offers an indispensable fundamental building block to construct the PSNN hardware. Furthermore, we proposed time-multiplexed spike encoding to realize functional PSNN far beyond the hardware integration scale limit. PSNNs with single/cascaded photonic spiking neurons were experimentally demonstrated to realize hardware-algorithm collaborative computing, showing capability in performing classification tasks with supervised learning algorithm, which paves the way for multi-layer PSNN for solving complex tasks.

preprint2022arXiv

Stepped-height ridge waveguide MQW polarization mode converter monolithically integrated with sidewall grating DFB laser

We report the first demonstration of a 1555 nm stepped-height ridge waveguide polarization mode converter monolithically integrated with a side wall grating distributed-feedback (DFB) laser using the identical epitaxial layer scheme. The device shows stable single longitudinal mode (SLM) operation with the output light converted from TE to TM polarization with an efficiency of >94% over a wide range of DFB injection currents (IDFB) from 140 mA to 190 mA. The highest TM mode purity of 98.2% was obtained at IDFB=180 mA. A particular advantage of this device is that only a single step of metalorganic vapor-phase epitaxy and two steps of III-V material dry etching are required for the whole integrated device fabrication, significantly reducing complexity and cost.