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Liang Fang

Liang Fang contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

High-efficiency second-harmonic and sum-frequency generation in a silicon nitride microring integrated with few-layer GaSe

Silicon nitride (SiN) photonics platform has attributes of ultra-low linear and nonlinear propagation losses and CMOS-compatible fabrication process, promising large-scale multifunctional photonic circuits. However, the centrosymmetric nature of SiN inhibits second-order nonlinear optical responses in its photonics platform, which is desirable for developing efficient nonlinear active devices. Here, we demonstrate high-efficiency second-order nonlinear processes in SiN photonics platform by integrating a few-layer GaSe flake on a SiN microring resonator. With the pump of microwatts continuous-wave lasers, second-harmonic generation and sum-frequency generation with the conversion efficiencies of 849%/W and 123%/W, respectively, are achieved, which benefit from the ultrahigh second-order nonlinear susceptibility of GaSe, resonance enhanced GaSe-light interaction, and phase-matching condition satisfied by the mode engineering. Combining with the easy integration, the GaSe-assisted high-efficiency second-order nonlinear processes offer a new route to enriching already strong functionality of SiN photonics platform in nonlinear optics.

preprint2022arXiv

High-responsivity MoS$_2$ hot-electron telecom-band photodetector integrated with microring resonator

We report a high-responsive hot-electron photodetector based on the integration of an Au-MoS$_2$ junction with a silicon nitride microring resonator (MRR) for detecting telecom-band light. The coupling of the evanescent field of the silicon nitride MRR with the Au-MoS$_2$ Schottky junction region enhances the hot-electron injection efficiency. The device exhibits a high responsivity of 154.6 mA W-1 at the wavelength of 1516 nm, and the moderately uniform responsivities are obtained over the wavelength range of 1500 nm-1630 nm. This MRR-enhanced MoS2 hot-electron photodetector offers possibilities for integrated optoelectronic systems.

preprint2019arXiv

Phase evolution and thermal stability of high Curie temperature BiScO$_3$-PbTiO$_3$-Pb(Cd${1/3}$Nb$_{2/3}$)O$_3$ ceramics near MPB

Piezoelectric and ferroelectric ceramics with a high Curie temperature (Tc) have attracted a growing attention owning to their applications under severe environments. In this work, phase structure, dielectric, ferroelectric and piezoelectric properties of (0.975-x)BiScO3-xPbTiO3-0.025Pb(Cd1/3Nb2/3)O3 ceramics (x = 0.58-0.64) were studied. A composition-induced structural transformation occurs from rhombohedral phase to tetragonal phase through an intermediate monoclinic phase with the increasing PT concentration. The relationship between structure and electrical properties of the system were discussed. The BS-xPT-PCN system near the morphotropic phase boundary (x = 0.62) exhibits excellent piezoelectric and ferroelectric performances with d33 = 508 pC/N, kp = 56%, and Pr = 40 uC/cm2. The high-temperature piezoelectricity of the sample with MPB (x = 0.62) was characterized by an in situ XRD. The excellent thermal stability of the crystal structure and the piezoelectric property indicate that the BS-xPT-PCN system is a promising candidate for high temperature piezoelectric applications.