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Researcher profile

Li Lei

Li Lei contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallmath.DGphysics.atm-clusphysics.optics

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Published work

6 published item(s)

preprint2020arXiv

Evidence for a new extended solid of nitrogen

A new extended solid nitrogen, referred to post-layered-polymeric nitrogen (PLP-N), was observed by further heating the layered-polymeric nitrogen (LP-N) to above 2300 K at 161 GPa. The new phase is found to be very transparent and exhibits ultra-large d-spacings ranging from 2.8 to 4.9 Å at 172 GPa, suggesting a possible large-unit-cell 2D chain-like or 0D cluster-type structure with wide bandgap. However, the observed X-ray diffraction pattern and Raman scattering data cannot match any predicted structures in the published literature. This finding further complicates the phase diagram of nitrogen and also highlights the path dependence of the high-pressure dissociative transition in nitrogen. In addition, the forming boundary between cg-N and LP-N has been determined.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

New Developments in Mean Curvature Flow of Arbitrary Codimension Inspired By Yau Rigidity Theory

In this survey, we will focus on the mean curvature flow theory with sphere theorems, and discuss the recent developments on the convergence theorems for the mean curvature flow of arbitrary codimension inspired by the Yau rigidity theory of submanifolds. Several new differentiable sphere theorems for submanifolds are obtained as consequences of the convergence theorems for the mean curvature flow. It should be emphasized that Theorem 4.1 is an optimal convergence theorem for the mean curvature flow of arbitrary codimension, which implies the first optimal differentiable sphere theorem for submanifolds with positive Ricci curvature. Finally, we present a list of unsolved problems in this area.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Rapid Synthesis of Thermoelectric SnSe Thin Films by MPCVD

Microwave plasma chemical vapor deposition (MPCVD) has been traditionally used to synthesize carbon-based materials such as diamonds, carbon nanotubes and graphene. Here we report that a rapid and catalyst-free growth of SnSe thin films can be achieved by using single-mode MPCVD with appropriate source materials. The analysis combing microscope images, X-ray diffraction patterns and lattice vibration modes shows that the grown thin films were composed of orthorhombic structured SnSe polycrystals mainly along the (111) direction. Further thermoelectric (TE) characterizations reveal that the power factor of the SnSe films reached 3.98 μW cm-1K-2 at 600 K, comparable to the highest reported values of SnSe thin films. Our results may open an avenue for rapid synthesis of new types of materials such as IV-VI compounds and be useful for TE application of these materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Synthesis and temperature-dependent photoluminescence of high density GeSe triangular nanoplate arrays on Si substrates

We have grown germanium selenide (GeSe) triangular nanoplate arrays (TNAs) with a high density (3.82E+6 / mm2) on the Si (111) substrate using a simple thermal evaporation method. The thickness and trilateral lengths of a single triangular nanoplate were statistically estimated by atomic force microscopy (AFM) as 44 nm, 365 nm, 458 nm and 605 nm, respectively. Transmission electron microscopy (TEM) images and X-ray diffraction (XRD) patterns show that the TNAs were composed of single crystalline GeSe phase. The Se-related defects in the lattice were also revealed by TEM images and Raman vibration modes. Unlike previously reported GeSe compounds, the GeSe TNAs exhibited temperature-dependent photoluminescence (PL). In addition, not previously reported PL peak (1.25 eV) of the 44 nm thick TNAs at 5 K was in the gaps between those of GeSe monolayers (1.5 nm) and thin films (400 nm), revealing a close relationship between the PL peak and the thickness of GeSe. The high-density structure and temperature-dependent PL of the TNAs on the Si substrate may be useful for temperature controllable semiconductor nanodevices.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Polycrystalline γ-boron: As hard as polycrystalline cubic boron nitride

The Vickers hardness of polycrystalline γ-B was measured using a diamond indentation method. The elastic properties of polycrystalline γ-B (B=213.9 GPa, G=227.2 GPa, and E=503.3 GPa) were determined using ultrasonic measurement at ambient condition. Under the loading force up to 20 N, our test gave an average Vickers hardness in the asymptotic-hardness region of 30.3 GPa. The average fracture toughness was measured as 4.1MPa m1/2. Additionally, We also measured the hardness and elastic properties of polycrystalline β-B and PcBN for comparison. The hardness and elastic properties for polycrystalline γ-B was found to be very close to that of PcBN. Our results suggest that the polycrystalline γ-B could be a superhard polycrystalline material for industrial applications.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Phase relations in boron at pressure up to 18 GPa and temperature up to 2200 °C

The phase relations in boron have been investigated at high pressure and high temperature using a multianvil apparatus, and the quenched sample has been analyzed by x-ray diffraction, Raman spectra and transmission electron microscopy. We demonstrate that γ-B28 can be synthesized over a wide P-T range, and T-B50 is obtained at higher temperatures and similar pressures. The phase boundary of the β-B106, γ-B28 and T-B50 is determined at pressures between 7 and 18 GPa and the temperatures of 500-2200 °C. The results suggest that T-B50 might be an intermediate phase-metastable, formed for kinetic reasons (Ostwald rule) on the way from β-B106 to T-192 and γ-B28 to T-192.

0 citations0 reviewsNo code linkedOpen access