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Li-chuan Zhang

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cond-mat.mtrl-sci physics.app-ph physics.comp-ph

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preprint2022arXiv

Evidence of Magnon-Mediated Orbital Magnetism in a Quasi-2D Topological Magnon Insulator

We explore spin dynamics in Cu(1,3-bdc), a quasi-2D topological magnon insulator. The results show that the thermal evolution of Landé $g$ -factor ( $g$ ) is anisotropic: $g_\textrm{in-plane}$ reduces while $g_\textrm{out-plane}$ increases with increasing temperature $T$ . Moreover, the anisotropy of the $g$ -factor ( $Δg$ ) and the anisotropy of saturation magnetization ( $ΔM_\textrm{s}$ ) are correlated below 4 K, but they diverge above 4 K. We show that the electronic orbital moment contributes to the $g$ anisotropy at lower $T$ , while the topological orbital moment induced by thermally excited spin chirality dictates the $g$ anisotropy at higher $T$ . Our work suggests an interplay among topology, spin chirality, and orbital magnetism in Cu(1,3-bdc).

preprint2020arXiv

Tinselenidene: a Two-dimensional Auxetic Material with Ultralow Lattice Thermal Conductivity and Ultrahigh Hole Mobility

By means of extensive ab initio calculations, a new two-dimensional (2D) atomic material tin selenide monolayer (coined as tinselenidene) is predicted to be a semiconductor with an indirect gap (1.45 eV) and a high hole mobility (of order 10000 cm2V-1S-1), and will bear an indirect-direct gap transition under a rather low strain (<0.5 GPa). Tinselenidene has a very small Young's modulus (20-40 GPa) and an ultralow lattice thermal conductivity (<3 Wm-1K-1 at 300 K), making it probably the most flexible and most heat-insulating material in known 2D atomic materials. In addition, tinseleniden has a large negative Poisson's ratio of -0.17, thus could act as a 2D auxetic material. With these intriguing properties, tinselenidene could have wide potential applications in thermoelectrics, nanomechanics and optoelectronics.

preprint2016arXiv

Diverse anisotropy of phonon transport in two-dimensional IV-VI compounds: A comparative study

New classes two-dimensional (2D) materials beyond graphene, including layered and non-layered, and their heterostructures, are currently attracting increasing interest due to their promising applications in nanoelectronics, optoelectronics and clean energy, where thermal transport property is one of the fundamental physical parameters. In this paper, we systematically investigated the phonon transport properties of 2D orthorhombic group IV-VI compounds of $GeS$ , $GeSe$ , $SnS$ and $SnSe$ by solving the Boltzmann transport equation (BTE) based on first-principles calculations. Despite the similar puckered (hinge-like) structure along the armchair direction as phosphorene, the four monolayer compounds possess diverse anisotropic properties in many aspects, such as phonon group velocity, Young's modulus and lattice thermal conductivity ( $κ$ ), etc. Especially, the $κ$ along the zigzag and armchair directions of monolayer $GeS$ shows the strongest anisotropy while monolayer $SnS$ and $SnSe$ shows an almost isotropy in phonon transport. The origin of the diverse anisotropy is fully studied and the underlying mechanism is discussed in detail. With limited size, the $κ$ could be effectively lowered, and the anisotropy could be effectively modulated by nanostructuring, which would extend the applications in nanoscale thermoelectrics and thermal management. Our study offers fundamental understanding of the anisotropic phonon transport properties of 2D materials, and would be of significance for further study, modulation and aplications in emerging technologies.

preprint2016arXiv

Layer dependence of geometric, electronic and piezoelectric properties of SnSe

By means of first-principles calculations, we explore systematically the geometric, electronic and piezoelectric properties of multilayer SnSe. We find that these properties are layer-dependent, indicating that the interlayer interaction plays an important role. With increasing the number of SnSe layers from 1 to 6, we observe that the lattice constant decreases from 4.27 $\mathring{A}$ to 4.22 $\mathring{A}$ along zigzag direction, and increases from 4.41 $\mathring{A}$ to 4.51 $\mathring{A}$ along armchair direction close to the bulk limit (4.21 $\mathring{A}$ and 4.52 $\mathring{A}$ , respectively); the band gap decreases from 1.45 eV to 1.08 eV, approaching the bulk gap 0.95 eV. Although the monolayer SnSe exhibits almost symmetric geometric and electronic structures along zigzag and armchair directions, bulk SnSe is obviously anisotropic, showing that the stacking of layers enhances the anisotropic character of SnSe. As bulk and even-layer SnSe have inversion centers, they cannot exhibit piezoelectric responses. However, we show that the odd-layer SnSe have piezoelectric coefficients much higher than those of the known piezoelectric materials, suggesting that the odd-layer SnSe is a good piezoelectric material.

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