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Researcher profile

Lenart Dudy

Lenart Dudy contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.str-elcond-mat.mtrl-sci

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Published work

3 published item(s)

preprint2022arXiv

ARPES in strongly disordered systems -- theory of electronic bands melting

It is well known that translational symmetry-breaking disorder will disrupt ARPES spectra up to the point where they become invisible. However, a theoretical framework to capture this phenomenon has been largely missing. Here, based on a rigorous theory of the ARPES process, we provide this much-needed framework. In particular, we show how the frequently used sudden electron approximation has to be modified in this situation. Our main result is an argument that links the photoemission line broadening with an operator content of a disorder operator and so with the criticality of the corresponding order-disorder phase transition. For concreteness, we focus here on the frustrated 2D trigonal (pseudo-)spin model, with Ising order-disorder operators behind the transition. Still, our formalism is general and can be applied in a much broader context.

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preprint2022arXiv

Toward Functionalized Ultrathin Oxide Films: the Impact of Surface Apical Oxygen

Thin films of transition metal oxides open up a gateway to nanoscale electronic devices beyond silicon characterized by novel electronic functionalities. While such films are commonly prepared in an oxygen atmosphere, they are typically considered to be ideally terminated with the stoichiometric composition. Using the prototypical correlated metal SrVO$_3$ as an example, it is demonstrated that this idealized description overlooks an essential ingredient: oxygen adsorbing at the surface apical sites. The oxygen adatoms, which persist even in an ultrahigh vacuum environment, are shown to severely affect the intrinsic electronic structure of a transition metal oxide film. Their presence leads to the formation of an electronically dead surface layer but also alters the band filling and the electron correlations in the thin films. These findings highlight that it is important to take into account surface apical oxygen or -- mutatis mutandis -- the specific oxygen configuration imposed by a capping layer to predict the behavior of ultrathin films of transition metal oxides near the single unit-cell limit.

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preprint2019arXiv

Tailoring the topological surface state in ultrathin $α$-Sn (111) films

We report on the electronic structure of $α$-Sn films in the very low thickness regime grown on InSb(111)A. High-resolution low photon energies angle-resolved photoemission (ARPES) allows for the direct observation of the linearly dispersing 2D topological surface states (TSSs) that exist between the second valence band and the conduction band. The Dirac point of this TSS was found to be 200meV below the Fermi level in 10-nm-thick $α$-Sn films, which enables the observation of the hybridization gap opening at the Dirac point of the TSS for thinner films. The crossover to a quasi-2D electronic structure is accompanied by a full gap opening at the Brillouin zone center, in agreement with our density functional theory calculations. We further identify the thickness regime of $α$-Sn films where the hybridization gap in TSS coexists with the topologically non-trivial electronic structure and one can expect the presence of a 1D helical edge states.

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